公开(公告)号：US20200335327A1

公开(公告)日：2020-10-22

申请号：US16304969

申请日：2017-05-23

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Raluca TIRON ,  Nicolas POSSEME ,  Xavier CHEVALIER

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3115

Abstract: A method for forming a functionalised guide pattern, includes forming a functionalisation layer on a substrate; depositing a protective layer on the functionalisation layer; forming a guide pattern on the protective layer that has a cavity opening onto the protective layer and a bottom and side walls; implanting ions with an atomic number of less than 10 in a portion of the protective layer located at the bottom of the cavity, such that the implanted portion can be selectively etched relative to the non-implanted portion; forming, in the cavity, a second functionalisation layer having first and second portions disposed on, respectively, the protective layer at the bottom of the cavity and the side walls of the cavity; and selectively etching the implanted portion and the first portion of the second functionalisation layer, to expose a portion of the functionalisation layer located at the bottom of the cavity.

公开(公告)号：US20190278170A1

公开(公告)日：2019-09-12

申请号：US16304897

申请日：2017-05-23

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Raluca TIRON ,  Nicolas POSSEME ,  Xavier CHEVALIER ,  Christophe NAVARRO

IPC: G03F7/00 ,  H01L21/027 ,  H01L21/311

Abstract: A method for the directed self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern, the guide pattern having a cavity with a bottom and side walls; forming a functionalisation layer on the guide pattern that has a first portion and a second portion disposed, respectively, on the bottom and side walls of the cavity; forming a protective layer on the first and second portions of the functionalisation layer; etching the protective layer and the second portion of the functionalisation layer such that a portion of the protective layer is retained and the side walls of the cavity are exposed, the retained portion of the protective layer having a thickness of less than 15 nm; selectively etching the portion of the protective layer relative to the first portion of the functionalisation layer and to the guide pattern; and depositing a block copolymer in the cavity.

公开(公告)号：US20210088897A1

公开(公告)日：2021-03-25

申请号：US16954875

申请日：2018-12-21

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Raluca TIRON ,  Florian DELACHAT ,  Ahmed GHARBI ,  Xavier CHEVALIER ,  Christophe NAVARRO ,  Anne PAQUET

IPC: G03F7/00 ,  C08F212/08 ,  C08F299/02

Abstract: A method for forming a chemical guiding structure intended for the self-assembly of a block copolymer by chemoepitaxy, includes forming on a substrate at least one initial pattern made of a first grafted polymer material having a first molar mass and a first chemical affinity with respect to the block copolymer; covering the initial pattern and a region of the substrate adjacent to the initial pattern with a layer including a second graftable polymer material, the second polymer material having a second molar mass, greater than the first molar mass, and a second chemical affinity with respect to the block copolymer, different from the first chemical affinity; and grafting the second polymer material in the region adjacent to the initial pattern.

公开(公告)号：US20190278171A1

公开(公告)日：2019-09-12

申请号：US16304933

申请日：2017-05-23

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Raluca TIRON ,  Nicolas POSSEME ,  Xavier CHEVALIER

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/075 ,  G03F7/11

Abstract: A method for forming a functionalised guide pattern for the self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern made of a first material having a first chemical affinity for the block copolymer, the guide pattern having a cavity with a bottom and side walls; grafting a functionalisation layer made of a second polymeric material having a second chemical affinity for the block copolymer, the functionalisation layer having a first portion grafted onto the bottom of the cavity and a second portion grafted onto the side walls of the cavity; selectively etching the second portion of the functionalisation layer relative to the first portion of the functionalisation layer, the etching including a step of exposure to an ion beam following a direction that intersects the second portion of the functionalisation layer, such that the ion beam does not reach the first portion of the functionalisation layer.

公开(公告)号：US20190196336A1

公开(公告)日：2019-06-27

申请号：US16227101

申请日：2018-12-20

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Raluca TIRON ,  Guillaume CLAVEAU ,  Ahmed GHARBI ,  Laurent PAIN ,  Xavier CHEVALIER ,  Christophe NAVARRO ,  Anne PAQUET

IPC: G03F7/40 ,  G03F7/00 ,  H01L21/027 ,  H01L21/02 ,  G03F7/20

CPC classification number: G03F7/405 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/70008 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/0273

Abstract: A method for forming a chemical guiding structure intended for self-assembly of a block copolymer by chemoepitaxy, where the method includes forming on a substrate a functionalisation layer made of a first polymer material having a first chemical affinity with respect to the block copolymer; forming on the substrate guiding patterns made of a second polymer material having a second chemical affinity with respect to the block copolymer, different from the first chemical affinity, and wherein the guiding to patterns have a critical dimension of less than 12.5 nm and are formed by means of a mask comprising spacers.