公开(公告)号：US20170044403A1

公开(公告)日：2017-02-16

申请号：US15338724

申请日：2016-10-31

Applicant: Cabot Microelectronics Corporation

Inventor： Brian REISS ,  Dana SAUTER VAN NESS ,  Viet LAM ,  Alexander HAINS ,  Steven KRAFT ,  Renhe JIA

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105 ,  C09K3/14 ,  B24B37/20

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  B24B37/20 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。

公开(公告)号：US20160257856A1

公开(公告)日：2016-09-08

申请号：US14639564

申请日：2015-03-05

Applicant: Cabot Microelectronics Corporation

Inventor： Brian REISS ,  Dana SAUTER VAN NESS ,  Viet LAM ,  Alexander HAINS ,  Steven KRAFT ,  Renhe JIA

IPC: C09G1/04 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  B24B37/20 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。