公开(公告)号：US10294399B2

公开(公告)日：2019-05-21

申请号：US15398933

申请日：2017-01-05

申请人： Cabot Microelectronics Corporation

发明人： Roman Ivanov ,  Fernando Hung Low ,  Cheng-Yuan Ko ,  Glenn Whitener

IPC分类号： H01L21/321 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/3105

摘要： The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.

公开(公告)号：US09828574B2

公开(公告)日：2017-11-28

申请号：US14993837

申请日：2016-01-12

申请人： Cabot Microelectronics Corporation

发明人： Roman Ivanov ,  Fernando Hung ,  Cheng-Yuan Ko ,  Fred Sun

IPC分类号： C11D7/32 ,  C11D11/00 ,  H01L21/02 ,  C11D7/06

CPC分类号： C11D11/0047 ,  C11D3/0073 ,  C11D7/06 ,  C11D7/261 ,  C11D7/265 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/329 ,  C11D7/34 ,  H01L21/02074

摘要： The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains one or more quaternary ammonium hydroxides, one or more organic amines, one or more metal inhibitors, and water. The invention also provides methods for using the cleaning composition.

公开(公告)号：US20160201016A1

公开(公告)日：2016-07-14

申请号：US14993837

申请日：2016-01-12

申请人： Cabot Microelectronics Corporation

发明人： Roman Ivanov ,  Fernando Hung ,  Cheng-Yuan Ko ,  Fred Sun

IPC分类号： C11D11/00 ,  H01L21/02 ,  C11D7/32

CPC分类号： C11D11/0047 ,  C11D3/0073 ,  C11D7/06 ,  C11D7/261 ,  C11D7/265 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/329 ,  C11D7/34 ,  H01L21/02074

摘要： The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains one or more quaternary ammonium hydroxides, one or more organic amines, one or more metal inhibitors, and water. The invention also provides methods for using the cleaning composition.

摘要翻译： 本发明提供了用于在化学机械抛光之后从半导体晶片清洗污染物的组合物。 清洁组合物含有一种或多种季铵氢氧化物，一种或多种有机胺，一种或多种金属抑制剂和水。 本发明还提供了使用清洁组合物的方法。