公开(公告)号：US09752057B2

公开(公告)日：2017-09-05

申请号：US14616250

申请日：2015-02-06

Applicant: Cabot Microelectronics Corporation

Inventor： Hui-Fang Hou ,  William Ward ,  Ming-Chih Yeh ,  Chih-Pin Tsai

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C09G1/02 ,  H01L21/321 ,  C23F3/06 ,  H01L21/3105 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) method for removal of a metal layer deposited over a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer is described herein. The method comprises abrading the metal layer with an acidic CMP composition to expose the underlying TiN or Ti/TiN layer, wherein the TiN or Ti/N layer is polished at a low rate due to the presence of a surfactant inhibitor. The acidic CMP composition comprises a particulate abrasive (e.g., silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of an anionic surfactant, a nonionic surfactant, cation surfactants, and a combination thereof.