公开(公告)号：US09803109B2

公开(公告)日：2017-10-31

申请号：US14612736

申请日：2015-02-03

Applicant: Cabot Microelectronics Corporation

Inventor： Hung-Tsung Huang ,  Ming-Chih Yeh ,  Chih-Pin Tsai

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C25F3/00 ,  C09K13/00 ,  C09K13/04 ,  C09G1/04 ,  C09G1/00 ,  H01L21/321 ,  H01L21/306 ,  C09G1/02 ,  H01L21/304 ,  H01L21/3105 ,  C09D1/02 ,  C09K3/14

CPC classification number: C09G1/04 ,  C09D1/02 ,  C09G1/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm2 to about 8 hydroxyls per nm2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.

公开(公告)号：US09752057B2

公开(公告)日：2017-09-05

申请号：US14616250

申请日：2015-02-06

Applicant: Cabot Microelectronics Corporation

Inventor： Hui-Fang Hou ,  William Ward ,  Ming-Chih Yeh ,  Chih-Pin Tsai

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C09G1/02 ,  H01L21/321 ,  C23F3/06 ,  H01L21/3105 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) method for removal of a metal layer deposited over a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer is described herein. The method comprises abrading the metal layer with an acidic CMP composition to expose the underlying TiN or Ti/TiN layer, wherein the TiN or Ti/N layer is polished at a low rate due to the presence of a surfactant inhibitor. The acidic CMP composition comprises a particulate abrasive (e.g., silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of an anionic surfactant, a nonionic surfactant, cation surfactants, and a combination thereof.

公开(公告)号：US20150221521A1

公开(公告)日：2015-08-06

申请号：US14616250

申请日：2015-02-06

Applicant: Cabot Microelectronics Corporation

Inventor： Hui-Fang HOU ,  William Ward ,  Ming-Chih Yeh ,  Chih-Pin Tsai

IPC: H01L21/3105 ,  C09G1/02 ,  C23F1/26 ,  H01L21/311 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) method for removal of a metal layer deposited over a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer is described herein. The method comprises abrading the metal layer with an acidic CMP composition to expose the underlying TiN or Ti/TiN layer, wherein the TiN or Ti/N layer is polished at a low rate due to the presence of a surfactant inhibitor. The acidic CMP composition comprises a particulate abrasive (e.g., silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of an anionic surfactant, a nonionic surfactant, cation surfactants, and a combination thereof.

Abstract translation: 本文描述了用于去除沉积在氮化钛（TiN）或钛/氮化钛（Ti / TiN）阻挡层上的金属层的化学机械抛光（CMP）方法。 该方法包括用酸性CMP组合物研磨金属层以暴露下面的TiN或Ti / TiN层，其中由于表面活性剂抑制剂的存在，TiN或Ti / N层以低速率抛光。 酸性CMP组合物包含悬浮在含有选自阴离子表面活性剂，非离子表面活性剂，阳离子表面活性剂及其组合的表面活性剂的液体载体中的颗粒磨料（例如二氧化硅，氧化铝）。