公开(公告)号：US20100322604A1

公开(公告)日：2010-12-23

申请号：US12763037

申请日：2010-04-19

申请人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

发明人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

IPC分类号： F24H1/20

CPC分类号： C23C16/4481

摘要： A precursor source vessel for providing vaporized precursor to a reaction chamber is provided. The precursor source vessel includes a lid having a first port, a second port, and a third port. The precursor source vessel also includes a base removably attached to the lid. The base includes a recessed region formed therein. One of the first, second, and third ports is a burp port configured to relieve the head pressure within the source vessel after the source vessel is installed but prior to use of the source vessel in semiconductor processing.

摘要翻译： 提供了一种用于向反应室提供蒸发的前体的前体源容器。 前体源容器包括具有第一端口，第二端口和第三端口的盖。 前体源容器还包括可移除地附接到盖的基座。 底座包括形成在其中的凹陷区域。 第一，第二和第三端口之一是打孔口，其构造成在源容器安装之后但在半导体加工中使用源容器之前减轻源容器内的头部压力。

公开(公告)号：US20130160709A1

公开(公告)日：2013-06-27

申请号：US13337604

申请日：2011-12-27

申请人： Carl L. White ,  Eric Shero

发明人： Carl L. White ,  Eric Shero

IPC分类号： C23C16/455

CPC分类号： C23C16/45525 ,  C23C16/4402 ,  C23C16/4408 ,  C23C16/45544 ,  C23C16/45561

摘要： A device for performing ALD includes a housing having a vacuum chamber that surrounds a horizontal flow reactor. The device further includes a gas distribution system for delivering gases to the reactor. The gas distribution system includes at least one of a high temperature valve and a high temperature filter disposed inside the vacuum chamber. The high temperature valve (and/or filter) controls (and/or filters) a supply of a precursor/reactant gas, inert gas, or precursor/reactant and inert gas mixture before it enters the horizontal flow reactor.

摘要翻译： 用于执行ALD的装置包括具有围绕水平流动反应器的真空室的壳体。 该装置还包括用于将气体输送到反应器的气体分配系统。 气体分配系统包括设置在真空室内的高温阀和高温过滤器中的至少一个。 在进入水平流动反应器之前，高温阀（和/或过滤器）控制（和/或过滤）前体/反应物气体，惰性气体或前体/反应物和惰性气体混合物的供应。

公开(公告)号：US20080085226A1

公开(公告)日：2008-04-10

申请号：US11870374

申请日：2007-10-10

申请人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

发明人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

IPC分类号： B01J19/00 ,  F28D21/00

CPC分类号： C23C16/4481 ,  C23C16/4401 ,  C23C16/4402

摘要： A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.

摘要翻译： 前体源容器包括容器主体，容器主体内的通道和附接到主体表面的阀。 内部腔室适于容纳化学反应物，并且通道从身体外部延伸到腔室。 阀调节通过通道的流量。 容器具有入口和出口阀，并且可选地用于排放内部气体的排气阀。 外部气体面板可以包括流体地介于出口阀和基板反应室之间的至少一个阀。 气体面板阀可以分别沿着与容器的平坦表面大致平行且不超过约10.0cm的平面定位。 容器盖中的过滤器或壁过滤气体流过容器的阀门。 快速连接组件允许快速和容易地将容器连接到气体面板。

公开(公告)号：US09394608B2

公开(公告)日：2016-07-19

申请号：US12754223

申请日：2010-04-05

申请人： Eric Shero ,  Mohith E. Verghese ,  Carl L. White ,  Herbert Terhorst ,  Dan Maurice

发明人： Eric Shero ,  Mohith E. Verghese ,  Carl L. White ,  Herbert Terhorst ,  Dan Maurice

IPC分类号： C23C16/455

CPC分类号： C23C16/45502 ,  C23C16/45504 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45591 ,  H01L21/0228 ,  Y10T137/85938

摘要： A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

摘要翻译： 一种具有壳体的反应器，其包围可操作地连接到反应室和排气组件的气体输送系统。 气体输送系统包括用于向反应室提供至少一种处理气体的多条气体管线。 气体输送系统还包括用于接收至少一种处理气体的混合器。 混合器可操作地连接到被配置成扩散工艺气体的扩散器。 扩散器直接附接到反应室的上表面，从而在它们之间形成扩散体。 扩散器包括至少一个分配表面，该分配表面被配置为当工艺气体在被引入反应室之前通过扩散器体积时向流化气体提供流量限制。

公开(公告)号：US09388492B2

公开(公告)日：2016-07-12

申请号：US13337604

申请日：2011-12-27

申请人： Carl L. White ,  Eric Shero

发明人： Carl L. White ,  Eric Shero

IPC分类号： C23C16/44 ,  C23C16/455

CPC分类号： C23C16/45525 ,  C23C16/4402 ,  C23C16/4408 ,  C23C16/45544 ,  C23C16/45561

摘要： A device for performing ALD includes a housing having a vacuum chamber that surrounds a horizontal flow reactor. The device further includes a gas distribution system for delivering gases to the reactor. The gas distribution system includes at least one of a high temperature valve and a high temperature filter disposed inside the vacuum chamber. The high temperature valve (and/or filter) controls (and/or filters) a supply of a precursor/reactant gas, inert gas, or precursor/reactant and inert gas mixture before it enters the horizontal flow reactor.

摘要翻译： 用于执行ALD的装置包括具有围绕水平流动反应器的真空室的壳体。 该装置还包括用于将气体输送到反应器的气体分配系统。 气体分配系统包括设置在真空室内的高温阀和高温过滤器中的至少一个。 在进入水平流动反应器之前，高温阀（和/或过滤器）控制（和/或过滤）前体/反应物气体，惰性气体或前体/反应物和惰性气体混合物的供应。

公开(公告)号：US20100173432A1

公开(公告)日：2010-07-08

申请号：US12350793

申请日：2009-01-08

申请人： Carl L. White ,  Eric Shero ,  Joe Reed

发明人： Carl L. White ,  Eric Shero ,  Joe Reed

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/4585 ,  H01L21/67011 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68771

摘要： A semiconductor processing apparatus includes a reaction chamber, a movable susceptor, a movement element, and a control system. The reaction chamber includes a baseplate. The baseplate includes an opening. The movable susceptor is configured to hold a workpiece. The movable element is configured to move a workpiece held on the susceptor towards the opening of the baseplate. The control system is configured to space the susceptor from the baseplate by an unsealed gap during processing of a workpiece in the reaction chamber. Purge gases may flow through the gap into the reaction chamber. Methods of maintaining the gap during processing include calibrating the height of pads and capacitance measurements when the susceptor is spaced from the baseplate.

摘要翻译： 半导体处理装置包括反应室，移动基座，移动元件和控制系统。 反应室包括底板。 底板包括一个开口。 移动基座构造成保持工件。 可移动元件构造成将保持在基座上的工件朝向基板的开口移动。 该控制系统构造成在处理反应室中的工件时通过未密封的间隙将基座从底板间隔开。 吹扫气体可能通过间隙流入反应室。 在处理过程中保持间隙的方法包括当基座与基板间隔开时校准垫的高度和电容测量。

公开(公告)号：US09593416B2

公开(公告)日：2017-03-14

申请号：US13404700

申请日：2012-02-24

申请人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

发明人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

IPC分类号： C23C16/44 ,  C23C16/448

CPC分类号： C23C16/4481 ,  C23C16/4401 ,  C23C16/4402

摘要： A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.

摘要翻译： 前体源容器包括容器主体，容器主体内的通道和附接到主体表面的阀。 内部腔室适于容纳化学反应物，并且通道从身体外部延伸到腔室。 阀调节通过通道的流量。 容器具有入口和出口阀，并且可选地用于排放内部气体的排气阀。 外部气体面板可以包括流体地介于出口阀和基板反应室之间的至少一个阀。 气体面板阀可以分别沿着与容器的平坦表面大致平行且不超过约10.0cm的平面定位。 容器盖中的过滤器或壁过滤气体流过容器的阀门。 快速连接组件允许快速和容易地将容器连接到气体面板。

公开(公告)号：US08986456B2

公开(公告)日：2015-03-24

申请号：US12763037

申请日：2010-04-19

申请人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

发明人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

IPC分类号： C23C16/448

CPC分类号： C23C16/4481

摘要： A precursor source vessel for providing vaporized precursor to a reaction chamber is provided. The precursor source vessel includes a lid having a first port, a second port, and a third port. The precursor source vessel also includes a base removably attached to the lid. The base includes a recessed region formed therein. One of the first, second, and third ports is a burp port configured to relieve the head pressure within the source vessel after the source vessel is installed but prior to use of the source vessel in semiconductor processing.

摘要翻译： 提供了一种用于向反应室提供蒸发的前体的前体源容器。 前体源容器包括具有第一端口，第二端口和第三端口的盖。 前体源容器还包括可移除地附接到盖的基座。 底座包括形成在其中的凹陷区域。 第一，第二和第三端口之一是打孔口，其构造成在源容器安装之后但在半导体加工中使用源容器之前减轻源容器内的头部压力。

公开(公告)号：US08216380B2

公开(公告)日：2012-07-10

申请号：US12350793

申请日：2009-01-08

申请人： Carl L. White ,  Eric Shero ,  Joe Reed

发明人： Carl L. White ,  Eric Shero ,  Joe Reed

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/4585 ,  H01L21/67011 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68771

摘要： A semiconductor processing apparatus includes a reaction chamber, a movable susceptor, a movement element, and a control system. The reaction chamber includes a baseplate. The baseplate includes an opening. The movable susceptor is configured to hold a workpiece. The movable element is configured to move a workpiece held on the susceptor towards the opening of the baseplate. The control system is configured to space the susceptor from the baseplate by an unsealed gap during processing of a workpiece in the reaction chamber. Purge gases may flow through the gap into the reaction chamber. Methods of maintaining the gap during processing include calibrating the height of pads and capacitance measurements when the susceptor is spaced from the baseplate.

摘要翻译： 半导体处理装置包括反应室，移动基座，移动元件和控制系统。 反应室包括底板。 底板包括一个开口。 移动基座构造成保持工件。 可移动元件构造成将保持在基座上的工件朝向基板的开口移动。 该控制系统构造成在处理反应室中的工件时通过未密封的间隙将基座从基板间隔开。 吹扫气体可能通过间隙流入反应室。 在处理过程中保持间隙的方法包括当基座与基板间隔开时校准垫的高度和电容测量。

公开(公告)号：US20120156108A1

公开(公告)日：2012-06-21

申请号：US13404700

申请日：2012-02-24

申请人： KYLE FONDURULIA ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

发明人： KYLE FONDURULIA ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

IPC分类号： B01J8/00 ,  B01D35/00

CPC分类号： C23C16/4481 ,  C23C16/4401 ,  C23C16/4402

摘要： A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.