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公开(公告)号：US06682969B1
公开(公告)日：2004-01-27
申请号：US09652863
申请日：2000-08-31
IPC分类号： H01L2100
CPC分类号： H01L28/65 , H01L21/31637 , H01L21/31691 , H01L23/5222 , H01L27/10852 , H01L28/56 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.
摘要翻译： 一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。 第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层 和第二导电层，以便在第二导电层内捕获多个氧原子。 富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积 接口层。 因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。
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公开(公告)号：US07023043B2
公开(公告)日：2006-04-04
申请号：US10039215
申请日：2002-01-03
IPC分类号： H01L29/62
CPC分类号： H01L28/65 , H01L21/31637 , H01L21/31691 , H01L23/5222 , H01L27/10852 , H01L28/56 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.
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公开(公告)号：US06492241B1
公开(公告)日：2002-12-10
申请号：US09546492
申请日：2000-04-10
申请人： Howard E. Rhodes , Mark Visokay , Tom Graettinger , Dan Gealy , Gurtej Sandhu , Cem Basceri , Steve Cummings
发明人： Howard E. Rhodes , Mark Visokay , Tom Graettinger , Dan Gealy , Gurtej Sandhu , Cem Basceri , Steve Cummings
IPC分类号： H01L2972
摘要： A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.
摘要翻译： 用于存储器件的电容器形成有用于底部电极的导电氧化物。 导电氧化物（RuOx）在低温下作为非晶膜沉积。 结果，膜被共形沉积在三维折叠结构上。 此外，随后的研磨步骤容易地在非晶膜上进行，提高了晶片生产量。 沉积和抛光后，膜在非氧化环境中结晶。
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公开(公告)号：US06940112B2
公开(公告)日：2005-09-06
申请号：US10234351
申请日：2002-08-30
申请人： Howard E. Rhodes , Mark Visokay , Tom Graettinger , Dan Gealy , Gurtej Sandhu , Cem Basceri , Steve Cummings
发明人： Howard E. Rhodes , Mark Visokay , Tom Graettinger , Dan Gealy , Gurtej Sandhu , Cem Basceri , Steve Cummings
摘要： A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.
摘要翻译： 用于存储器件的电容器形成有用于底部电极的导电氧化物。 导电氧化物（RuO x S）在低温下作为非晶膜沉积。 结果，膜被共形沉积在三维折叠结构上。 此外，随后的研磨步骤容易地在非晶膜上进行，提高了晶片生产量。 沉积和抛光后，膜在非氧化环境中结晶。
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公开(公告)号：US06869877B2
公开(公告)日：2005-03-22
申请号：US10234581
申请日：2002-08-30
申请人： Howard E. Rhodes , Mark Visokay , Tom Graettinger , Dan Gealy , Gurtej Sandhu , Cem Basceri , Steve Cummings
发明人： Howard E. Rhodes , Mark Visokay , Tom Graettinger , Dan Gealy , Gurtej Sandhu , Cem Basceri , Steve Cummings
摘要： A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.
摘要翻译： 用于存储器件的电容器形成有用于底部电极的导电氧化物。 导电氧化物（RuOx）在低温下作为非晶膜沉积。 结果，膜被共形沉积在三维折叠结构上。 此外，随后的研磨步骤容易地在非晶膜上进行，提高了晶片生产量。 沉积和抛光后，膜在非氧化环境中结晶。
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公开(公告)号：US20090127656A1
公开(公告)日：2009-05-21
申请号：US12289692
申请日：2008-10-31
申请人： Cem Basceri , Gurtej Sandhu
发明人： Cem Basceri , Gurtej Sandhu
IPC分类号： H01L29/00
CPC分类号： H01L27/1085
摘要： A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to distinguish memory states for the capacitor structure, allowing the invention to be used as a memory device. A method of forming the trap cites involves an atomic layer deposition of a material at pre-determined areas in the dielectric layer.
摘要翻译： 一种具有设置在两个导电电极之间的电介质层的电容器结构，其中所述电介质层包含对应于特定能量状态的至少一个电荷陷阱位置。 能量状态可以用于区分电容器结构的存储器状态，从而允许本发明用作存储器件。 形成陷阱的方法涉及在电介质层中的预定区域处的材料的原子层沉积。
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公开(公告)号：US07388248B2
公开(公告)日：2008-06-17
申请号：US10930774
申请日：2004-09-01
申请人： Cem Basceri , Gurtej Sandhu
发明人： Cem Basceri , Gurtej Sandhu
CPC分类号： H01L27/1085
摘要： A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to distinguish memory states for the capacitor structure, allowing the invention to be used as a memory device. A method of forming the trap cites involves an atomic layer deposition,of a material at pre-determined areas in the dielectric layer.
摘要翻译： 一种具有设置在两个导电电极之间的电介质层的电容器结构，其中所述电介质层包含对应于特定能量状态的至少一个电荷陷阱位置。 能量状态可以用于区分电容器结构的存储器状态，从而允许本发明用作存储器件。 形成陷阱的方法涉及在电介质层中预定区域处的材料的原子层沉积。
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公开(公告)号：US20070069270A1
公开(公告)日：2007-03-29
申请号：US11398498
申请日：2006-04-04
申请人： Cem Basceri , Howard Rhodes , Gurtej Sandhu , F. Gealy , Thomas Graettinger
发明人： Cem Basceri , Howard Rhodes , Gurtej Sandhu , F. Gealy , Thomas Graettinger
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L21/31637 , H01L21/31691 , H01L23/5222 , H01L27/10852 , H01L28/56 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.
摘要翻译： 一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。 第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层 和第二导电层，以便在第二导电层内捕获多个氧原子。 富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积 接口层。 因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。
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公开(公告)号：US20060292814A1
公开(公告)日：2006-12-28
申请号：US11515432
申请日：2006-08-31
申请人： Cem Basceri , Gurtej Sandhu
发明人： Cem Basceri , Gurtej Sandhu
IPC分类号： H01L21/20
CPC分类号： H01L29/66181 , H01L28/91
摘要： In one implementation, an opening within a capacitor electrode forming layer is formed over a substrate. A spacing layer is deposited over the capacitor electrode forming layer to within the opening over at least upper portions of sidewalls of the opening. The spacing layer is formed to be laterally thicker at an elevationally outer portion within the opening as compared to an elevationally inner portion within the opening. A spacer is formed within the opening by anisotropically etching the spacing layer. The spacer is laterally thicker at an elevationally outer portion within the opening as compared to an elevationally inner portion within the opening. After forming a first capacitor electrode layer laterally over the spacer, at least a portion of the spacer is removed and a capacitor dielectric region and a second capacitor electrode layer are formed over the first capacitor electrode layer.
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公开(公告)号：US20060252221A1
公开(公告)日：2006-11-09
申请号：US11485593
申请日：2006-07-11
申请人： Cem Basceri , F. Gealy , Gurtej Sandhu
发明人： Cem Basceri , F. Gealy , Gurtej Sandhu
IPC分类号： H01L21/20 , H01L21/31 , H01L21/8242
CPC分类号： H01G4/33 , H01G4/1209 , H01G4/1272 , H01L21/31645 , H01L27/10852 , H01L28/60 , H01L28/65 , H01L28/90 , H01L28/91 , H01L29/7833
摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.
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