公开(公告)号：US06682969B1

公开(公告)日：2004-01-27

申请号：US09652863

申请日：2000-08-31

申请人： Cem Basceri ,  Howard E. Rhodes ,  Gurtej Sandhu ,  F. Daniel Gealy ,  Thomas M. Graettinger

发明人： Cem Basceri ,  Howard E. Rhodes ,  Gurtej Sandhu ,  F. Daniel Gealy ,  Thomas M. Graettinger

IPC分类号： H01L2100

CPC分类号： H01L28/65 ,  H01L21/31637 ,  H01L21/31691 ,  H01L23/5222 ,  H01L27/10852 ,  H01L28/56 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.

摘要翻译： 一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。 第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层 和第二导电层，以便在第二导电层内捕获多个氧原子。 富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积 接口层。 因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。

公开(公告)号：US07023043B2

公开(公告)日：2006-04-04

申请号：US10039215

申请日：2002-01-03

申请人： Cem Basceri ,  Howard E. Rhodes ,  Gurtej Sandhu ,  F. Daniel Gealy ,  Thomas M. Graettinger

发明人： Cem Basceri ,  Howard E. Rhodes ,  Gurtej Sandhu ,  F. Daniel Gealy ,  Thomas M. Graettinger

IPC分类号： H01L29/62

CPC分类号： H01L28/65 ,  H01L21/31637 ,  H01L21/31691 ,  H01L23/5222 ,  H01L27/10852 ,  H01L28/56 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.

公开(公告)号：US06492241B1

公开(公告)日：2002-12-10

申请号：US09546492

申请日：2000-04-10

申请人： Howard E. Rhodes ,  Mark Visokay ,  Tom Graettinger ,  Dan Gealy ,  Gurtej Sandhu ,  Cem Basceri ,  Steve Cummings

发明人： Howard E. Rhodes ,  Mark Visokay ,  Tom Graettinger ,  Dan Gealy ,  Gurtej Sandhu ,  Cem Basceri ,  Steve Cummings

IPC分类号： H01L2972

CPC分类号： H01L28/60 ,  C23C16/40 ,  H01L28/55 ,  H01L28/90

摘要： A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.

摘要翻译： 用于存储器件的电容器形成有用于底部电极的导电氧化物。 导电氧化物（RuOx）在低温下作为非晶膜沉积。 结果，膜被共形沉积在三维折叠结构上。 此外，随后的研磨步骤容易地在非晶膜上进行，提高了晶片生产量。 沉积和抛光后，膜在非氧化环境中结晶。

公开(公告)号：US06940112B2

公开(公告)日：2005-09-06

申请号：US10234351

申请日：2002-08-30

申请人： Howard E. Rhodes ,  Mark Visokay ,  Tom Graettinger ,  Dan Gealy ,  Gurtej Sandhu ,  Cem Basceri ,  Steve Cummings

发明人： Howard E. Rhodes ,  Mark Visokay ,  Tom Graettinger ,  Dan Gealy ,  Gurtej Sandhu ,  Cem Basceri ,  Steve Cummings

IPC分类号： C23C16/40 ,  H01L21/02 ,  H01L21/76

CPC分类号： H01L28/60 ,  C23C16/40 ,  H01L28/55 ,  H01L28/90

摘要： A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.

摘要翻译： 用于存储器件的电容器形成有用于底部电极的导电氧化物。 导电氧化物（RuO x S）在低温下作为非晶膜沉积。 结果，膜被共形沉积在三维折叠结构上。 此外，随后的研磨步骤容易地在非晶膜上进行，提高了晶片生产量。 沉积和抛光后，膜在非氧化环境中结晶。

公开(公告)号：US06869877B2

公开(公告)日：2005-03-22

申请号：US10234581

申请日：2002-08-30

申请人： Howard E. Rhodes ,  Mark Visokay ,  Tom Graettinger ,  Dan Gealy ,  Gurtej Sandhu ,  Cem Basceri ,  Steve Cummings

发明人： Howard E. Rhodes ,  Mark Visokay ,  Tom Graettinger ,  Dan Gealy ,  Gurtej Sandhu ,  Cem Basceri ,  Steve Cummings

IPC分类号： C23C16/40 ,  H01L21/02 ,  H01L21/44

CPC分类号： H01L28/60 ,  C23C16/40 ,  H01L28/55 ,  H01L28/90

摘要： A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.

摘要翻译： 用于存储器件的电容器形成有用于底部电极的导电氧化物。 导电氧化物（RuOx）在低温下作为非晶膜沉积。 结果，膜被共形沉积在三维折叠结构上。 此外，随后的研磨步骤容易地在非晶膜上进行，提高了晶片生产量。 沉积和抛光后，膜在非氧化环境中结晶。

公开(公告)号：USRE45357E1

公开(公告)日：2015-02-03

申请号：US12714339

申请日：2010-02-26

申请人： Howard E. Rhodes

发明人： Howard E. Rhodes

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14609

摘要： A CMOS imager which includes a substrate voltage pump to bias a doped area of a substrate to prevent leakage into the substrate from the transistors formed in the doped area. The invention also provides a CMOS imager where a photodetector sensor array is formed in a first p-well and readout logic is formed in a second p-well. The first p-well can be selectively doped to optimize cross-talk, collection efficiency and transistor leakage, thereby improving the quantum efficiency of the sensor array while the second p-well can be selectively doped and/or biased to improve the speed and drive of the readout circuitry.

公开(公告)号：US08859352B2

公开(公告)日：2014-10-14

申请号：US13559467

申请日：2012-07-26

申请人： Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Vincent Venezia ,  Yin Qian

发明人： Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Vincent Venezia ,  Yin Qian

IPC分类号： H01L21/00 ,  H01L29/66 ,  H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/6659 ,  H01L29/66636

摘要： Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors.

摘要翻译： 本发明的实施例涉及一种具有设置在硅衬底中的像素晶体管和外围晶体管的图像传感器。 对于一些实施例，保护涂层设置在外围晶体管上，并且掺杂的硅在衬底上外延生长以形成用于像素晶体管的轻掺杂漏极（LDD）区域。 保护氧化物可以用于在像素晶体管的LDD区域的形成期间防止外围晶体管上的硅的外延生长。

公开(公告)号：US08772898B2

公开(公告)日：2014-07-08

申请号：US13370085

申请日：2012-02-09

申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

IPC分类号： H01L31/0216

CPC分类号： H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

摘要： A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.

摘要翻译： 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外部的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。 当光路在半导体层内部时，沟槽定位成阻碍发光元件和光感测元件之间的光路。

公开(公告)号：US20130258144A1

公开(公告)日：2013-10-03

申请号：US13432958

申请日：2012-03-28

申请人： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

发明人： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC分类号： H04N9/64

CPC分类号： H01L27/14623 ,  H01L27/14627 ,  H01L27/1464

摘要： Embodiments of the invention describe a system, apparatus and method for obtaining black reference pixels for dark current correction processing are described herein. Embodiments of the invention capture image signal data via a plurality of pixel cells of a pixel unit of an image device, wherein capturing image signal data involves establishing a first state of exposing incident light on each pixel of the pixel unit and a second state of shielding incident light from one or more pixels of the pixel unit via a shutter unit disposed over the pixel unit. Image signal data from each pixel of the pixel unit captured during the first state and the second state is read, and scene image data is created by combining a subset of image signal data captured during the first state with a dark current component including a subset of image signal data captured during the second state.

摘要翻译： 本发明的实施例描述了用于获得用于暗电流校正处理的黑色参考像素的系统，装置和方法。 本发明的实施例经由图像装置的像素单元的多个像素单元捕获图像信号数据，其中捕获图像信号数据涉及建立在像素单元的每个像素上曝光入射光的第一状态和第二屏蔽状态 通过设置在像素单元上的快门单元，来自像素单元的一个或多个像素的入射光。 读取在第一状态和第二状态期间捕获的像素单元的每个像素的图像信号数据，并且通过将在第一状态期间捕获的图像信号数据的子集与包括一个 在第二状态期间捕获的图像信号数据。

公开(公告)号：US08513762B2

公开(公告)日：2013-08-20

申请号：US13250237

申请日：2011-09-30

申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

IPC分类号： H01L31/00 ,  H01L31/0232

CPC分类号： H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

摘要翻译： 背面照明成像传感器包括垂直堆叠传感器，其通过使用不同的硅层在堆叠（或单独的堆叠）内的不同级别形成光电二极管来减少串扰，以检测不同的颜色。 形成蓝光，绿光和红光检测硅层，蓝光检测层位于最靠近传感器背面的位置，红光检测层位于离传感器背面最远的位置。 可以在红色和绿色光检测层之间插入抗反射涂层（ARC）层，以减少由红光检测层捕获的光学交叉对话。 可以使用非晶多晶硅来形成红光检测层，以提高检测红光的效率。