Fabrication of sub-50 nm solid-state nanostructures based on nanolithography
    1.
    发明授权
    Fabrication of sub-50 nm solid-state nanostructures based on nanolithography 失效
    基于纳米光刻制备低于50nm的固态纳米结构

    公开(公告)号:US07291284B2

    公开(公告)日:2007-11-06

    申请号:US10725939

    申请日:2003-12-03

    摘要: Combination of nanolithography and wet chemical etching including the fabrication of nanoarrays of sub-50 nm gold dots and line structures with deliberately designed approximately 12-100 nm gaps. These structures were made by initially using direct write nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid (MHA), on Au/Ti/SiOx/Si substrates and then wet chemical etching to remove the exposed gold. These are the smallest Au structures prepared by a wet chemical etching strategy. Also, Dip-Pen Nanolithography (DPN) has been used to generate resist layers on Au, Ag, and Pd that when combined with wet chemical etching can lead to nanostructures with deliberately designed shapes and sizes. Monolayers of mercaptohexadecanoic acid (MHA) or octadecanethiol (ODT), patterned by DPN, were explored as etch resists. They work comparably well on Au and Ag, but ODT is the superior material for Pd. MHA seems to attract the FeCl3 etchant and results in nonuniform etching of the underlying Pd substrate. Dots, lines, triangles and circles, ranging in size from sub-100 to several hundred nm have been fabricated on these substrates. These results show how one can use DPN as an alternative to more complex and costly procedures like electron beam lithography to generate nanostructures from inorganic materials.

    摘要翻译: 纳米光刻和湿化学蚀刻的组合,包括制造具有故意设计的约12-100nm间隙的亚50nm金点和线结构的纳米阵列。 最初使用直写纳米光刻法在Au / Ti / SiO x / Si衬底上刻蚀抗蚀剂16-巯基十六烷酸(MHA),然后进行湿化学蚀刻以除去暴露的 金。 这些是通过湿化学蚀刻策略制备的最小的Au结构。 此外,Dip-Pen Nanoithography(DPN)已经用于在Au,Ag和Pd上生成抗蚀剂层,当与湿化学蚀刻结合时,可以导致具有故意设计的形状和尺寸的纳米结构。 作为抗蚀剂,研究了由DPN构图的巯基十六烷酸(MHA)或十八烷硫醇(ODT)的单层。 它们在Au和Ag上相当好地工作,但ODT是Pd的优良材料。 MHA似乎吸引FeCl 3 3蚀刻剂,并导致下面的Pd底物的不均匀蚀刻。 已经在这些基板上制造了尺寸从小于100到几百纳米的点,线,三角形和圆形。 这些结果显示了如何使用DPN作为替代更复杂和昂贵的方法,如电子束光刻从无机材料产生纳米结构。

    Fabrication of sub-50 nm solid-state nanostructures based on nanolithography
    2.
    发明申请
    Fabrication of sub-50 nm solid-state nanostructures based on nanolithography 失效
    基于纳米光刻制备低于50nm的固态纳米结构

    公开(公告)号:US20060014001A1

    公开(公告)日:2006-01-19

    申请号:US10725939

    申请日:2003-12-03

    IPC分类号: B32B15/00

    摘要: Combination of nanolithography and wet chemical etching including the fabrication of nanoarrays of sub-50 nm gold dots and line structures with deliberately designed approximately 12-100 nm gaps. These structures were made by initially using direct write nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid (MHA), on Au/Ti/SiOx/Si substrates and then wet chemical etching to remove the exposed gold. These are the smallest Au structures prepared by a wet chemical etching strategy. Also, Dip-Pen Nanolithography (DPN) has been used to generate resist layers on Au, Ag, and Pd that when combined with wet chemical etching can lead to nanostructures with deliberately designed shapes and sizes. Monolayers of mercaptohexadecanoic acid (MHA) or octadecanethiol (ODT), patterned by DPN, were explored as etch resists. They work comparably well on Au and Ag, but ODT is the superior material for Pd. MHA seems to attract the FeCl3 etchant and results in nonuniform etching of the underlying Pd substrate. Dots, lines, triangles and circles, ranging in size from sub-100 to several hundred nm have been fabricated on these substrates. These results show how one can use DPN as an alternative to more complex and costly procedures like electron beam lithography to generate nanostructures from inorganic materials.

    摘要翻译: 纳米光刻和湿化学蚀刻的组合,包括制造具有故意设计的约12-100nm间隙的亚50nm金点和线结构的纳米阵列。 最初使用直写纳米光刻法在Au / Ti / SiO x / Si衬底上刻蚀抗蚀剂16-巯基十六烷酸(MHA),然后进行湿化学蚀刻以除去暴露的 金。 这些是通过湿化学蚀刻策略制备的最小的Au结构。 此外,Dip-Pen Nanoithography(DPN)已经用于在Au,Ag和Pd上生成抗蚀剂层,当与湿化学蚀刻结合时,可以导致具有故意设计的形状和尺寸的纳米结构。 作为抗蚀剂,研究了由DPN构图的巯基十六烷酸(MHA)或十八烷硫醇(ODT)的单层。 它们在Au和Ag上相当好地工作,但ODT是Pd的优良材料。 MHA似乎吸引FeCl 3 3蚀刻剂,并导致下面的Pd底物的不均匀蚀刻。 已经在这些基板上制造了尺寸从小于100到几百纳米的点,线,三角形和圆形。 这些结果显示了如何使用DPN作为替代更复杂和昂贵的方法,如电子束光刻从无机材料产生纳米结构。

    Methods utilizing scanning probe microscope tips and products thereof or produced thereby
    3.
    发明授权
    Methods utilizing scanning probe microscope tips and products thereof or produced thereby 有权
    使用扫描探针显微镜尖端及其产品或由其制造的方法

    公开(公告)号:US07446324B2

    公开(公告)日:2008-11-04

    申请号:US10951031

    申请日:2004-09-28

    IPC分类号: G21G5/00

    摘要: The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.

    摘要翻译: 本发明提供了称为“浸笔”纳米光刻(DPN)的光刻方法。 DPN使用扫描探针显微镜(SPM)尖端(例如,原子力显微镜(AFM)尖端)作为“笔”,固态基底(例如,金)作为“纸”,并且具有化学亲和力的分子 固态基板为“墨水”。 在DPN中使用分子从SPM尖端到固体基质的毛细管传输,以直接写入由亚微米尺寸的相对小的分子集合组成的图案,使得DPN可用于制造各种微尺寸和纳米尺寸的器件。 本发明还提供由DPN图案化的衬底,包括亚微米组合阵列,以及用于执行DPN的试剂盒,装置和软件。 本发明还提供了一种在空气中进行AFM成像的方法。 该方法包括用疏水性化合物涂覆AFM尖端,选择疏水性化合物,使得与使用未涂覆的AFM尖端进行的AFM成像相比,使用涂覆的AFM尖端进行的AFM成像得到改善。 最后,本发明提供涂覆有疏水化合物的AFM尖端。

    Methods utilizing scanning probe microscope tips and products therefor or produced thereby
    4.
    发明授权
    Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
    方法利用扫描探针显微镜尖端及其产品或由此产生

    公开(公告)号:US06827979B2

    公开(公告)日:2004-12-07

    申请号:US09866533

    申请日:2001-05-24

    IPC分类号: B05D500

    摘要: The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.

    摘要翻译: 本发明提供了称为“浸笔”纳米光刻(DPN)的光刻方法。 DPN使用扫描探针显微镜(SPM)尖端(例如,原子力显微镜(AFM)尖端)作为“笔”,固态基底(例如,金)作为“纸”,并且具有化学亲和力的分子 固态基板为“墨水”。 在DPN中使用分子从SPM尖端到固体基质的毛细管传输,以直接写入由亚微米尺寸的相对小的分子集合组成的图案,使得DPN可用于制造各种微尺寸和纳米尺寸的器件。 本发明还提供由DPN图案化的衬底,包括亚微米组合阵列,以及用于执行DPN的试剂盒,装置和软件。 本发明还提供了一种在空气中进行AFM成像的方法。 该方法包括用疏水性化合物涂覆AFM尖端,选择疏水性化合物,使得与使用未涂覆的AFM尖端进行的AFM成像相比,使用涂覆的AFM尖端进行的AFM成像得到改善。 最后,本发明提供涂覆有疏水化合物的AFM尖端。

    Methods utilizing scanning probe microscope tips and products thereof or produced thereby
    6.
    发明授权
    Methods utilizing scanning probe microscope tips and products thereof or produced thereby 有权
    使用扫描探针显微镜尖端及其产品或由其制造的方法

    公开(公告)号:US08187673B2

    公开(公告)日:2012-05-29

    申请号:US11933251

    申请日:2007-10-31

    IPC分类号: B05D3/00

    摘要: The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.

    摘要翻译: 本发明提供了称为“浸笔”纳米光刻(DPN)的光刻方法。 DPN使用扫描探针显微镜(SPM)尖端(例如,原子力显微镜(AFM)尖端)作为“笔”,固态基底(例如,金)作为“纸”,并且具有化学亲和力的分子 固体底物作为“墨水”。DPN中使用分子从SPM尖端到固体基质的毛细管转运,以直接写入由亚微米尺寸的相对小的分子集合组成的图案,使得DPN可用于制造 各种微米级和纳米级器件。 本发明还提供由DPN图案化的衬底,包括亚微米组合阵列,以及用于执行DPN的试剂盒,装置和软件。 本发明还提供了一种在空气中进行AFM成像的方法。 该方法包括用疏水性化合物涂覆AFM尖端,选择疏水性化合物,使得与使用未涂覆的AFM尖端进行的AFM成像相比,使用涂覆的AFM尖端进行的AFM成像得到改善。 最后,本发明提供涂覆有疏水化合物的AFM尖端。

    Methods utilizing scanning probe microscope tips and products therefor or products thereby
    8.
    发明授权
    Methods utilizing scanning probe microscope tips and products therefor or products thereby 有权
    使用扫描探针显微镜尖端及其产品或其产品的方法

    公开(公告)号:US06635311B1

    公开(公告)日:2003-10-21

    申请号:US09477997

    申请日:2000-01-05

    IPC分类号: B05D500

    摘要: A method of direct-write nanolithography comprising: providing a solid substrate comprising a surface; providing a nanoscopic tip coated with patterning compound; and contacting the coated tip with the substrate, so that the patterning compound is delivered to the substrate so as to produce a desired pattern in submicrometer dimensions. Nanolithographic resolution can be affected by substrate grain size, diffusion rate of the patterning compound, tip-substrate contact time, the rate of transport of the patterning compound from the tip to the substrate, and tip sharpness. The method is a useful tool for fabrication of nanoscale structures.

    摘要翻译: 一种直写式纳米光刻方法,包括:提供包含表面的固体基质; 提供涂有图案化合物的纳米级尖端; 并使涂覆的末端与基底接触,使得图案化化合物被递送到基底,从而在亚微米尺寸上产生所需的图案。 纳米光刻分辨率可能受衬底晶粒尺寸,图形化合物的扩散速率,尖端 - 衬底接触时间,图案化合物从尖端到衬底的传输速率和尖端锐度的影响。 该方法是制造纳米级结构的有用工具。

    Methods utilizing scanning probe microscope tips and products therefor or produced thereby
    10.
    发明授权
    Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
    方法利用扫描探针显微镜尖端及其产品或由此产生

    公开(公告)号:US08163345B2

    公开(公告)日:2012-04-24

    申请号:US12534086

    申请日:2009-07-31

    IPC分类号: B05D5/00

    摘要: The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN and kits for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.

    摘要翻译: 本发明提供了称为“浸笔”纳米光刻(DPN)的光刻方法。 在DPN中使用分子从SPM尖端到固体基质的毛细管传输,以直接写入由亚微米尺寸的相对小的分子集合组成的图案,使得DPN可用于制造各种微尺寸和纳米尺寸的器件。 本发明还提供由DPN图案化的基材和用于进行DPN的试剂盒。 本发明还提供了一种在空气中进行AFM成像的方法。 该方法包括用疏水性化合物涂覆AFM尖端,选择疏水性化合物,使得与使用未涂覆的AFM尖端进行的AFM成像相比,使用涂覆的AFM尖端进行的AFM成像得到改善。 最后,本发明提供涂覆有疏水化合物的AFM尖端。