摘要:
Combination of nanolithography and wet chemical etching including the fabrication of nanoarrays of sub-50 nm gold dots and line structures with deliberately designed approximately 12-100 nm gaps. These structures were made by initially using direct write nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid (MHA), on Au/Ti/SiOx/Si substrates and then wet chemical etching to remove the exposed gold. These are the smallest Au structures prepared by a wet chemical etching strategy. Also, Dip-Pen Nanolithography (DPN) has been used to generate resist layers on Au, Ag, and Pd that when combined with wet chemical etching can lead to nanostructures with deliberately designed shapes and sizes. Monolayers of mercaptohexadecanoic acid (MHA) or octadecanethiol (ODT), patterned by DPN, were explored as etch resists. They work comparably well on Au and Ag, but ODT is the superior material for Pd. MHA seems to attract the FeCl3 etchant and results in nonuniform etching of the underlying Pd substrate. Dots, lines, triangles and circles, ranging in size from sub-100 to several hundred nm have been fabricated on these substrates. These results show how one can use DPN as an alternative to more complex and costly procedures like electron beam lithography to generate nanostructures from inorganic materials.
摘要翻译:纳米光刻和湿化学蚀刻的组合,包括制造具有故意设计的约12-100nm间隙的亚50nm金点和线结构的纳米阵列。 最初使用直写纳米光刻法在Au / Ti / SiO x / Si衬底上刻蚀抗蚀剂16-巯基十六烷酸(MHA),然后进行湿化学蚀刻以除去暴露的 金。 这些是通过湿化学蚀刻策略制备的最小的Au结构。 此外,Dip-Pen Nanoithography(DPN)已经用于在Au,Ag和Pd上生成抗蚀剂层,当与湿化学蚀刻结合时,可以导致具有故意设计的形状和尺寸的纳米结构。 作为抗蚀剂,研究了由DPN构图的巯基十六烷酸(MHA)或十八烷硫醇(ODT)的单层。 它们在Au和Ag上相当好地工作,但ODT是Pd的优良材料。 MHA似乎吸引FeCl 3 3蚀刻剂,并导致下面的Pd底物的不均匀蚀刻。 已经在这些基板上制造了尺寸从小于100到几百纳米的点,线,三角形和圆形。 这些结果显示了如何使用DPN作为替代更复杂和昂贵的方法,如电子束光刻从无机材料产生纳米结构。
摘要:
Combination of nanolithography and wet chemical etching including the fabrication of nanoarrays of sub-50 nm gold dots and line structures with deliberately designed approximately 12-100 nm gaps. These structures were made by initially using direct write nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid (MHA), on Au/Ti/SiOx/Si substrates and then wet chemical etching to remove the exposed gold. These are the smallest Au structures prepared by a wet chemical etching strategy. Also, Dip-Pen Nanolithography (DPN) has been used to generate resist layers on Au, Ag, and Pd that when combined with wet chemical etching can lead to nanostructures with deliberately designed shapes and sizes. Monolayers of mercaptohexadecanoic acid (MHA) or octadecanethiol (ODT), patterned by DPN, were explored as etch resists. They work comparably well on Au and Ag, but ODT is the superior material for Pd. MHA seems to attract the FeCl3 etchant and results in nonuniform etching of the underlying Pd substrate. Dots, lines, triangles and circles, ranging in size from sub-100 to several hundred nm have been fabricated on these substrates. These results show how one can use DPN as an alternative to more complex and costly procedures like electron beam lithography to generate nanostructures from inorganic materials.
摘要翻译:纳米光刻和湿化学蚀刻的组合,包括制造具有故意设计的约12-100nm间隙的亚50nm金点和线结构的纳米阵列。 最初使用直写纳米光刻法在Au / Ti / SiO x / Si衬底上刻蚀抗蚀剂16-巯基十六烷酸(MHA),然后进行湿化学蚀刻以除去暴露的 金。 这些是通过湿化学蚀刻策略制备的最小的Au结构。 此外,Dip-Pen Nanoithography(DPN)已经用于在Au,Ag和Pd上生成抗蚀剂层,当与湿化学蚀刻结合时,可以导致具有故意设计的形状和尺寸的纳米结构。 作为抗蚀剂,研究了由DPN构图的巯基十六烷酸(MHA)或十八烷硫醇(ODT)的单层。 它们在Au和Ag上相当好地工作,但ODT是Pd的优良材料。 MHA似乎吸引FeCl 3 3蚀刻剂,并导致下面的Pd底物的不均匀蚀刻。 已经在这些基板上制造了尺寸从小于100到几百纳米的点,线,三角形和圆形。 这些结果显示了如何使用DPN作为替代更复杂和昂贵的方法,如电子束光刻从无机材料产生纳米结构。
摘要:
The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要:
The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要:
The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). The method include the following steps: (i) providing a substrate and a scanning probe microscope tip; (ii) coating the tip with a patterning compound and a solvent to form a wet tip; and (iii) contacting the coated tip with the substrate so that the compound is applied to the substrate so as to produce a desired pattern. The invention also provides substrates patterned by DPN and kits for performing DPN.
摘要:
The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要:
In one aspect, a method of nanolithography is provided using a driving force to control the movement of a deposition compound from a scanning probe microscope tip to a substrate. Another aspect of the invention provides a tip for use in nanolithography having an internal cavity and an aperture restricting movement of a deposition compound from the tip to the substrate. The rate and extent of movement of the deposition compound through the aperture is controlled by a driving force.
摘要:
A method of direct-write nanolithography comprising: providing a solid substrate comprising a surface; providing a nanoscopic tip coated with patterning compound; and contacting the coated tip with the substrate, so that the patterning compound is delivered to the substrate so as to produce a desired pattern in submicrometer dimensions. Nanolithographic resolution can be affected by substrate grain size, diffusion rate of the patterning compound, tip-substrate contact time, the rate of transport of the patterning compound from the tip to the substrate, and tip sharpness. The method is a useful tool for fabrication of nanoscale structures.
摘要:
The invention provides a nanolithographic method, comprising: (i) providing a substrate; (ii) providing a nanoscopic tip coated with a patterning compound; (iii) contacting the coated tip with the substrate so that the patterning compound is applied to the substrate to produce a desired pattern; and (iv) wherein the patterning compound is anchored to the substrate.
摘要:
The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN and kits for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.