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    Methods utilizing scanning probe microscope tips and products therefor or produced thereby
    2.
    发明授权
    Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
    方法利用扫描探针显微镜尖端及其产品或由此产生

    公开(公告)号：US07524534B2

    公开(公告)日：2009-04-28

    申请号：US10937877

    申请日：2004-09-10

    申请人： Chad A. Mirkin ,  Richard Piner ,  Seunghun Hong

    发明人： Chad A. Mirkin ,  Richard Piner ,  Seunghun Hong

    IPC分类号： B05D1/26

    CPC分类号： B82B3/00 ,  B05D1/007 ,  B05D1/185 ,  B05D1/26 ,  G01Q80/00 ,  G03F7/0002 ,  G03F7/165 ,  Y10S977/849 ,  Y10S977/853 ,  Y10S977/854 ,  Y10S977/855 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/86 ,  Y10S977/88 ,  Y10S977/884 ,  Y10S977/885 ,  Y10S977/886 ,  Y10S977/895 ,  Y10T428/24802

    摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN), which utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid-state substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging preformed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.

    摘要翻译： 本发明提供一种称为“浸笔”纳米光刻（DPN）的光刻方法，其使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态 衬底（例如，金）作为“纸”，以及对固态衬底具有化学亲和力的分子作为“油墨”。 在DPN中使用分子从SPM尖端到固态基底的毛细管转运，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微米级和纳米尺寸的器件。 本发明还提供由DPN图案化的衬底，包括亚微米组合阵列，以及用于执行DPN的试剂盒，装置和软件。 本发明还提供了一种在空气中进行AFM成像的方法。 该方法包括用疏水化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端预成型的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。 最后，本发明提供涂覆有疏水化合物的AFM尖端。

    Modified stannic oxide-zirconium oxide complex sol and method for preparing same
    3.
    发明授权
    Modified stannic oxide-zirconium oxide complex sol and method for preparing same 有权
    改性氧化锡 - 氧化锆复合溶胶及其制备方法

    公开(公告)号：US07476695B2

    公开(公告)日：2009-01-13

    申请号：US11074659

    申请日：2005-03-09

    申请人： Yoshinari Koyama ,  Motoko Asada

    发明人： Yoshinari Koyama ,  Motoko Asada

    IPC分类号： B01F3/12 ,  B01F17/00

    CPC分类号： B82Y30/00 ,  C01G25/00 ,  C01G25/006 ,  C01G41/006 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2006/22 ,  C09C1/00 ,  C09C1/0012 ,  Y10S516/922 ,  Y10S516/928 ,  Y10S977/775 ,  Y10S977/777 ,  Y10S977/886

    摘要： There is provided a stable sol comprising modified stannic oxide-zirconium oxide complex colloidal particles, wherein the particles are formed by coating as nuclei stannic oxide-zirconium oxide complex colloidal particles in which stannic oxide colloidal particles obtained by a reaction of metal tin, an organic acid and hydrogen peroxide is bonded to zirconium oxide colloidal particles with tungsten oxide-stannic oxide-silicon dioxide complex colloidal particles. The sol has a high refractive index and is improved in water resistance, moisture resistance and weather resistance, and can be used by mixing with a hard coating paint as a component for improving properties of a hard coating film applied on a plastic lens surface.

    摘要翻译： 提供了包含改性氧化锡 - 氧化锆复合胶体颗粒的稳定溶胶，其中颗粒通过涂覆作为氧化锡 - 氧化锆复合胶体颗粒形成，其中通过金属锡，有机物 酸和过氧化氢与氧化钨 - 氧化锡 - 二氧化硅复合胶体颗粒结合到氧化锆胶体颗粒上。 该溶胶具有高折射率，并且耐水性，耐湿性和耐候性得到改善，并且可以通过与硬涂层涂料混合来用作用于改善施加在塑料透镜表面上的硬涂膜的性能的组分。

    Memory Cells, And Methods Of Forming Memory Cells
    5.
    发明申请
    Memory Cells, And Methods Of Forming Memory Cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US20090134444A1

    公开(公告)日：2009-05-28

    申请号：US11945160

    申请日：2007-11-26

    申请人： Hussein I. Hanafi

    发明人： Hussein I. Hanafi

    IPC分类号： H01L29/788 ,  H01L21/336

    CPC分类号： H01L29/42332 ,  B82Y10/00 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/66825 ,  Y10S977/886 ,  Y10S977/936 ,  Y10S977/943

    摘要： Some embodiments include methods of forming memory cells. Dopant is implanted into a semiconductor substrate to form a pair of source/drain regions that are spaced from one another by a channel region. The dopant is annealed within the source/drain regions, and then a plurality of charge trapping units are formed over the channel region. Dielectric material is then formed over the charge trapping units, and control gate material is formed over the dielectric material. Some embodiments include memory cells that contain a plurality of nanosized islands of charge trapping material over a channel region, with adjacent islands being spaced from one another by gaps. The memory cells can further include dielectric material over and between the nanosized islands, with the dielectric material forming a container shape having an upwardly opening trough therein. The memory cells can further include control gate material within the trough.

    摘要翻译： 一些实施例包括形成存储器单元的方法。 将掺杂剂注入到半导体衬底中以形成通过沟道区彼此间隔开的一对源/漏区。 掺杂剂在源极/漏极区内退火，然后在沟道区上形成多个电荷俘获单元。 然后在电荷捕获单元上形成介电材料，并且在电介质材料上形成控制栅极材料。 一些实施例包括在通道区域上包含电荷捕获材料的多个纳米尺寸岛的存储器单元，其中相邻的岛通过间隙彼此间隔开。 存储单元还可以包括在纳米岛之上和之间的电介质材料，其中电介质材料形成在其中具有向上开口槽的容器形状。 存储单元还可包括槽内的控制栅极材料。

    Nanolithography methods and products therefor and produced thereby
    7.
    发明申请
    Nanolithography methods and products therefor and produced thereby 失效
    纳米光刻方法和产品，由此生产

    公开(公告)号：US20040131843A1

    公开(公告)日：2004-07-08

    申请号：US10381893

    申请日：2004-02-02

    发明人： Chad A Mirkin ,  Peter V Schwartz ,  James J Storhoff ,  So-Jung Park

    IPC分类号： B05D001/36 ,  B05D001/32

    CPC分类号： B82B3/00 ,  G01Q80/00 ,  G03F7/0002 ,  G03F7/16 ,  G03F7/2049 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/863 ,  Y10S977/884 ,  Y10S977/885 ,  Y10S977/886 ,  Y10T428/254

    摘要： The invention provides methods of nanolithography and products therefor and produced thereby. In particular, the invention provides a nanolithographic method referred to as high force nanografting (HFN). HFN utilizes a tip (e.g., a scanning probe microscope (SPM) tip such as an atomic force microscope (AFM) tip) to pattern a substrate passivated with a resist, In the presence of a patterning compound, the tip is used to apply a high force to the substrate to remove molecules of the resist from the substrate, whereupon molecules of the patterning compound are able to attach to the substrate the form the desired pattern.

    摘要翻译： 本发明提供了纳米光刻技术及其产品的方法，由此生产。 特别地，本发明提供了称为高力纳米移动（HFN）的纳米光刻方法。 HFN使用尖端（例如，扫描探针显微镜（SPM）尖端，例如原子力显微镜（AFM）尖端）来图案化用抗蚀剂钝化的基底。在图案化化合物的存在下，尖端用于施加 从衬底去除抗蚀剂分子，从而衬底上的分子能够附着到衬底上形成所需图案。

    Methods of forming memory cells
    8.
    发明授权
    Methods of forming memory cells 有权
    形成记忆细胞的方法

    公开(公告)号：US07745295B2

    公开(公告)日：2010-06-29

    申请号：US11945160

    申请日：2007-11-26

    申请人： Hussein I. Hanafi

    发明人： Hussein I. Hanafi

    IPC分类号： H01L21/336

    CPC分类号： H01L29/42332 ,  B82Y10/00 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/66825 ,  Y10S977/886 ,  Y10S977/936 ,  Y10S977/943

    摘要： Some embodiments include methods of forming memory cells. Dopant is implanted into a semiconductor substrate to form a pair of source/drain regions that are spaced from one another by a channel region. The dopant is annealed within the source/drain regions, and then a plurality of charge trapping units are formed over the channel region. Dielectric material is then formed over the charge trapping units, and control gate material is formed over the dielectric material. Some embodiments include memory cells that contain a plurality of nanosized islands of charge trapping material over a channel region, with adjacent islands being spaced from one another by gaps. The memory cells can further include dielectric material over and between the nanosized islands, with the dielectric material forming a container shape having an upwardly opening trough therein. The memory cells can further include control gate material within the trough.

    摘要翻译： 一些实施例包括形成存储器单元的方法。 将掺杂剂注入到半导体衬底中以形成通过沟道区彼此间隔开的一对源/漏区。 掺杂剂在源极/漏极区内退火，然后在沟道区上形成多个电荷俘获单元。 然后在电荷捕获单元上形成介电材料，并且在电介质材料上形成控制栅极材料。 一些实施例包括在通道区域上包含电荷捕获材料的多个纳米尺寸岛的存储器单元，其中相邻的岛通过间隙彼此间隔开。 存储单元还可以包括在纳米岛之上和之间的电介质材料，其中电介质材料形成在其中具有向上开口槽的容器形状。 存储单元还可包括槽内的控制栅极材料。

    Methods utilizing scanning probe microscope tips and products thereof or produced thereby
    9.
    发明授权
    Methods utilizing scanning probe microscope tips and products thereof or produced thereby 有权
    使用扫描探针显微镜尖端及其产品或由其制造的方法

    公开(公告)号：US07446324B2

    公开(公告)日：2008-11-04

    申请号：US10951031

    申请日：2004-09-28

    申请人： Chad A. Mirkin ,  Richard Piner ,  Seunghun Hong

    发明人： Chad A. Mirkin ,  Richard Piner ,  Seunghun Hong

    IPC分类号： G21G5/00

    CPC分类号： B82B3/00 ,  B05D1/007 ,  B05D1/185 ,  B05D1/26 ,  G01Q80/00 ,  G03F7/0002 ,  G03F7/165 ,  Y10S977/849 ,  Y10S977/853 ,  Y10S977/854 ,  Y10S977/855 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/86 ,  Y10S977/88 ,  Y10S977/884 ,  Y10S977/885 ,  Y10S977/886 ,  Y10S977/895 ,  Y10T428/24802

    摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.

    摘要翻译： 本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。 DPN使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态基底（例如，金）作为“纸”，并且具有化学亲和力的分子 固态基板为“墨水”。 在DPN中使用分子从SPM尖端到固体基质的毛细管传输，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微尺寸和纳米尺寸的器件。 本发明还提供由DPN图案化的衬底，包括亚微米组合阵列，以及用于执行DPN的试剂盒，装置和软件。 本发明还提供了一种在空气中进行AFM成像的方法。 该方法包括用疏水性化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端进行的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。 最后，本发明提供涂覆有疏水化合物的AFM尖端。

    Methods utilizing scanning probe microscope tips and products therefor or produced thereby
    10.
    发明授权
    Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
    方法利用扫描探针显微镜尖端及其产品或由此产生

    公开(公告)号：US06827979B2

    公开(公告)日：2004-12-07

    申请号：US09866533

    申请日：2001-05-24

    申请人： Chad A. Mirkin ,  Richard Piner ,  Seunghun Hong

    发明人： Chad A. Mirkin ,  Richard Piner ,  Seunghun Hong

    IPC分类号： B05D500

    CPC分类号： B82B3/00 ,  B05D1/007 ,  B05D1/185 ,  B05D1/26 ,  G01Q80/00 ,  G03F7/0002 ,  G03F7/165 ,  Y10S977/849 ,  Y10S977/853 ,  Y10S977/854 ,  Y10S977/855 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/86 ,  Y10S977/88 ,  Y10S977/884 ,  Y10S977/885 ,  Y10S977/886 ,  Y10S977/895 ,  Y10T428/24802

    摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.

    摘要翻译： 本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。 DPN使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态基底（例如，金）作为“纸”，并且具有化学亲和力的分子 固态基板为“墨水”。 在DPN中使用分子从SPM尖端到固体基质的毛细管传输，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微尺寸和纳米尺寸的器件。 本发明还提供由DPN图案化的衬底，包括亚微米组合阵列，以及用于执行DPN的试剂盒，装置和软件。 本发明还提供了一种在空气中进行AFM成像的方法。 该方法包括用疏水性化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端进行的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。 最后，本发明提供涂覆有疏水化合物的AFM尖端。