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    Semiconductor Arrangement Having a Resistive Memory
    8.
    发明申请
    Semiconductor Arrangement Having a Resistive Memory 审中-公开

    公开(公告)号：US20080191197A1

    公开(公告)日：2008-08-14

    申请号：US11572951

    申请日：2005-07-21

    Applicant: Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    Inventor： Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    IPC: H01L51/30 ,  H01L51/40

    CPC classification number: H01L51/0052 ,  B82Y10/00 ,  G11C13/0014 ,  H01B1/121 ,  H01L27/11502 ,  H01L27/285 ,  H01L51/0036 ,  H01L51/0051

    Abstract: A memory cell reversibly switchable between different stable electrical resistance states, the memory cell having a first electrode and a second electrode and an active layer arranged between the first and the second electrode, the active layer including a compound represented by general formula , wherein R1 and R2 are independently selected from —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —S(CH2)mCH3, —S-aryl, —NR3R4, —SR3 and -halogen; R1 and R2 may together form a ring; R5 and R6 are independently selected from —H, -alkyl, -aryl and -heteroaryl; m is either 0 or an integer ranging from 1 to 10; n is an integer ranging from 2 to 1000; and a compound represented by general formula wherein R7, R8, R9, R10, R11, R12, R13, and R14 are independently selected from the group consisting of —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —CO(CH2)mCH3, -halogen, —CN and —NO2; R7 and R8 may together form a ring; R8 and R9 may together form a ring; R9 and R10 may together form a ring; R11 and R12 may together form a ring; R12 and R13 may together form a ring; and R13 and R14 may together form a ring.Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

    Memory cell, method for the production thereof and use of a composition therefor
    9.
    发明授权
    Memory cell, method for the production thereof and use of a composition therefor 有权
    记忆单元，其制造方法和其组合物的使用

    公开(公告)号：US07238964B2

    公开(公告)日：2007-07-03

    申请号：US11044762

    申请日：2005-01-27

    Applicant: Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    Inventor： Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    IPC: H01L29/04 ,  H01L31/20 ,  H01L33/00

    CPC classification number: H01L51/0595 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L27/285 ,  H01L51/0051

    Abstract: A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising (a) a compound selected from the group consisting of in which R1 and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1 and R2, R2 and R3, R3 and R4 together may form a ring, (b) a compound of the general formula II: in which R5 to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R5 and R6 or R7 and R8 together may form a ring, and optionally (c) a polymer. A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.

    Abstract translation: 提供了一种存储单元，其包括两个电极和布置在其间并包含活性材料的层，所述活性材料包含（a）选自下组的化合物：其中R 1和R 2， 可以具有以下含义：-H， - 烷基， - 芳基， - 杂芳基，-O-烷基，-O-芳基， - O-杂芳基，-SH - ， - S-烷基， -S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 其中R 1和R 2，R 2和R 3， R 3和R 4一起可以形成环，（b）通式II的化合物：其中R 5至R 可以具有如下含义：-H， - 烷基， - 芳基， - 杂芳基， - - - 烷基，-O-芳基， - O-杂芳基， N（烷基）2，-N（芳基）2 N，-N（杂芳基）2， -SH，-S-烷基，-S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基 ，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 2，其中R 5 和R 6或R 7和R 8一起可以形成环，和任选地（c）聚合物。 此外还提供了用于生产根据本发明的电池的方法和可用作存储器电池的活性材料的组合物的新用途。

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