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    Resistive random access memory device and memory array including the same
    4.
    发明申请
    Resistive random access memory device and memory array including the same 有权
    电阻随机存取存储器件和包含相同的存储器阵列

    公开(公告)号：US20110049464A1

    公开(公告)日：2011-03-03

    申请号：US12805430

    申请日：2010-07-30

    申请人： Chang-bum Lee ,  Dong-soo Lee ,  Chang-Jung Kim

    发明人： Chang-bum Lee ,  Dong-soo Lee ,  Chang-Jung Kim

    IPC分类号： H01L45/00

    CPC分类号： H01L45/04 ,  G11C13/0007 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146

    摘要： A resistive random access memory (RRAM) includes a resistive memory layer of a transition metal oxide, such as Ni oxide, and is doped with a metal material. The RRAM may include at least one first electrode, a resistive memory layer on the at least one first electrode, the resistive memory layer including a Ni oxide layer doped with at least one element selected from a group consisting of Fe, Co, and Sn, and at least one second electrode on the resistive memory layer. The RRAM device may include a plurality of first electrodes and a plurality of second electrodes, and the resistive memory layer may be between the plurality of first electrodes and the plurality of second electrodes.

    摘要翻译： 电阻随机存取存储器（RRAM）包括诸如Ni氧化物的过渡金属氧化物的电阻性存储层，并且掺杂有金属材料。 RRAM可以包括至少一个第一电极，至少一个第一电极上的电阻性存储器层，电阻性存储层包括掺杂有选自Fe，Co和Sn中的至少一种元素的Ni氧化物层， 以及电阻存储器层上的至少一个第二电极。 RRAM器件可以包括多个第一电极和多个第二电极，并且电阻性存储器层可以在多个第一电极和多个第二电极之间。

    ZnO diode and method of forming the same
    5.
    发明申请
    ZnO diode and method of forming the same 审中-公开
    ZnO二极管及其形成方法

    公开(公告)号：US20080142796A1

    公开(公告)日：2008-06-19

    申请号：US11980454

    申请日：2007-10-31

    申请人： Dong-hun Kang ,  I-hun Song ,  Chang-Jung Kim ,  Young-soo Park

    发明人： Dong-hun Kang ,  I-hun Song ,  Chang-Jung Kim ,  Young-soo Park

    IPC分类号： H01L29/10 ,  H01L21/16

    CPC分类号： H01L29/22 ,  H01L29/26 ,  H01L29/47 ,  H01L29/872

    摘要： A zinc oxide (ZnO) group and method of forming the same are provided. The ZnO group diode may include a first electrode and a second electrode that are separated from each other, and an active layer formed of MxIn1-xZnO (wherein “M” is a Group III metal) between the first electrode and the second electrode. The first electrode may have a work function lower than the active layer. The second electrode may have a work function higher than the active layer.

    摘要翻译： 提供氧化锌（ZnO）基团及其形成方法。 ZnO族二极管可以包括彼此分离的第一电极和第二电极，以及由M 1 x In 1 x x ZnO形成的有源层（其中“ M“是第III族金属）。 第一电极可具有低于有源层的功函数。 第二电极可具有比有源层高的功函数。