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    Resistive memory devices, memory systems and methods of controlling input and output operations of the same
    4.
    发明授权
    Resistive memory devices, memory systems and methods of controlling input and output operations of the same 有权
    电阻式存储器件，存储器系统和控制其输入和输出操作的方法

    公开(公告)号：US08223529B2

    公开(公告)日：2012-07-17

    申请号：US12703354

    申请日：2010-02-10

    申请人： Ho-Jung Kim ,  Yeong-Taek Lee ,  Chul-Woo Park ,  Sang-Beom Kang

    发明人： Ho-Jung Kim ,  Yeong-Taek Lee ,  Chul-Woo Park ,  Sang-Beom Kang

    IPC分类号： G11C11/00

    CPC分类号： G11C13/004 ,  G11C8/10 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/005 ,  G11C2013/0054 ,  G11C2013/0076 ,  G11C2013/009

    摘要： A resistive memory device includes a resistive memory cell array, an output circuit and an input circuit. The resistive memory cell array includes a plurality of memory cells that are coupled to bitlines. The output circuit generates a sensing output signal during a write operation by sensing a bitline voltage, and generates output data during a read operation by sensing the bitline voltage. The input circuit controls the bitline voltage based on input data for the write operation, and limits the bitline voltage in response to the sensing output signal during the write operation. The memory cells are protected by effectually limiting bitline voltage.

    摘要翻译： 电阻式存储器件包括电阻存储单元阵列，输出电路和输入电路。 电阻存储单元阵列包括耦合到位线的多个存储单元。 输出电路通过感测位线电压在写入操作期间产生感测输出信号，并通过感测位线电压在读取操作期间产生输出数据。 输入电路基于用于写入操作的输入数据来控制位线电压，并且在写入操作期间响应于感测输出信号来限制位线电压。 存储单元受到有效限制位线电压的保护。

    Resistive memory devices and methods of controlling operations of the same
    7.
    发明授权
    Resistive memory devices and methods of controlling operations of the same 有权
    电阻式存储器件及其操作方法

    公开(公告)号：US08271856B2

    公开(公告)日：2012-09-18

    申请号：US12711416

    申请日：2010-02-24

    申请人： Sang-Beom Kang ,  Chul-Woo Park ,  Hyun-Ho Choi ,  Ho-Jung Kim

    发明人： Sang-Beom Kang ,  Chul-Woo Park ,  Hyun-Ho Choi ,  Ho-Jung Kim

    IPC分类号： G11C29/00

    CPC分类号： G06F11/1048 ,  G11C13/0004 ,  G11C2029/0411

    摘要： To control operations of a resistive memory device, an input-output operation of an error check and correction (ECC) code is separated from an input-output operation of data. A condition of the input-output operation of the ECC code is determined stricter than a condition of the input-output operation of the data. reliability of the input-output operation of the ECC code may be enhanced, thereby reducing errors due to defect memory cells, noise, etc.

    摘要翻译： 为了控制电阻性存储器件的操作，错误检查和校正（ECC）代码的输入输出操作与数据的输入输出操作分离。 确定ECC代码的输入输出操作的条件比数据的输入输出操作的条件更严格。 可以提高ECC代码的输入输出操作的可靠性，从而减少由于缺陷存储单元，噪声等导致的错误。

    Resistive Memory Devices and Methods of Controlling Operations of the Same
    10.
    发明申请
    Resistive Memory Devices and Methods of Controlling Operations of the Same 有权
    电阻式存储器件及其控制方法

    公开(公告)号：US20100218073A1

    公开(公告)日：2010-08-26

    申请号：US12711416

    申请日：2010-02-24

    申请人： Sang-Beom Kang ,  Chul-Woo Park ,  Hyun-Ho Choi ,  Ho-Jung Kim

    发明人： Sang-Beom Kang ,  Chul-Woo Park ,  Hyun-Ho Choi ,  Ho-Jung Kim

    IPC分类号： H03M13/05 ,  G06F11/10

    CPC分类号： G06F11/1048 ,  G11C13/0004 ,  G11C2029/0411

    摘要： To control operations of a resistive memory device, an input-output operation of an error check and correction (ECC) code is separated from an input-output operation of data. A condition of the input-output operation of the ECC code is determined stricter than a condition of the input-output operation of the data. reliability of the input-output operation of the ECC code may be enhanced, thereby reducing errors due to defect memory cells, noise, etc.

    摘要翻译： 为了控制电阻性存储器件的操作，错误检查和校正（ECC）代码的输入输出操作与数据的输入输出操作分离。 确定ECC代码的输入输出操作的条件比数据的输入输出操作的条件更严格。 可以提高ECC代码的输入输出操作的可靠性，从而减少由于缺陷存储单元，噪声等导致的错误。