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    ETCHING SOLUTION FOR REMOVAL OF OXIDE FILM, METHOD FOR PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    2.
    发明申请
    ETCHING SOLUTION FOR REMOVAL OF OXIDE FILM, METHOD FOR PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
    用于除去氧化膜的蚀刻溶液，其制备方法和制备半导体器件的方法

    公开(公告)号：US20090023265A1

    公开(公告)日：2009-01-22

    申请号：US12243728

    申请日：2008-10-01

    申请人： CHANG-SUP MUN ,  Hyung-Ho Ko ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    发明人： CHANG-SUP MUN ,  Hyung-Ho Ko ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    IPC分类号： H01L21/762 ,  H01L21/306 ,  H01L21/02

    CPC分类号： H01L21/31111 ,  H01L21/76224 ,  H01L28/40

    摘要： Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R1—OSO3−HA+, R1—CO2−HA+,R1—PO42—(HA+)2,(R1)2—PO4—HA+, or R1—SO3—HA+ where R1 is a straight or branched hydrocarbon group of C4 to C22 and A is ammonia or amine. The etching solution provides a high etching selectivity ratio of an oxide film to a nitride film or a polysilicon film. Therefore, in a semiconductor device fabrication process such as a STI device isolation process or a capacitor formation process, when an oxide film is exposed together with a nitride film or a polysilicon film, the etching solution can be efficiently used in selectively removing only the oxide film.

    摘要翻译： 提供了一种用于去除氧化膜的含阴离子表面活性剂的蚀刻溶液，其制备方法以及使用该蚀刻溶液制造半导体器件的方法。 蚀刻溶液包括氢氟酸（HF），去离子水和阴离子表面活性剂。 阴离子表面活性剂是其中以R1-OSO3-HA +，R1-CO2-HA +，R1-PO42-（HA +）2，（R1）2-PO4-HA + 或R1-SO3-HA +，其中R1是C4至C22的直链或支链烃基，A是氨或胺。 蚀刻溶液提供氧化膜与氮化物膜或多晶硅膜的高蚀刻选择性比。 因此，在诸如STI器件隔离处理或电容器形成工艺的半导体器件制造工艺中，当氧化物膜与氮化物膜或多晶硅膜一起暴露时，可以有效地使用蚀刻溶液来仅选择性地除去氧化物 电影。

    Cleaning solution of silicon germanium layer and cleaning method using the same
    3.
    发明授权
    Cleaning solution of silicon germanium layer and cleaning method using the same 有权
    硅锗层的清洗液和使用其的清洗方法

    公开(公告)号：US07435301B2

    公开(公告)日：2008-10-14

    申请号：US11104829

    申请日：2005-04-13

    申请人： Chang-Sup Mun ,  Doo-Won Kwon ,  Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi

    发明人： Chang-Sup Mun ,  Doo-Won Kwon ,  Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi

    IPC分类号： C23G1/16

    CPC分类号： H01L21/02052 ,  C11D1/66 ,  C11D1/72 ,  C11D3/044 ,  C11D11/0047 ,  H01L21/3081 ,  Y10S134/902

    摘要： Disclosed are a cleaning solution for preventing damage of a silicon germanium layer when cleaning a semiconductor device including the silicon germanium layer and a cleaning method using the same. The cleaning solution of a silicon germanium layer includes from about 0.01 to about 2.5 percent by weight of a non-ionic surfactant with respect to 100 percent by weight of the cleaning solution, about 0.05 to about 5.0 percent by weight of an alkaline compound with respect to the cleaning solution and a remaining amount of pure water. The damage to an exposed silicon germanium layer can be prevented when cleaning a silicon substrate having a silicon germanium layer. Impurities present on the surface portion of the silicon germanium layer can be effectively removed.

    摘要翻译： 公开了一种用于在清洁包括硅锗层的半导体器件时的防止硅锗层损坏的清洁溶液以及使用其的清洁方法。 硅锗层的清洁溶液包括约0.01至约2.5重量％的非离子表面活性剂相对于100重量％的清洁溶液，约0.05至约5.0重量％的碱性化合物，相对于 到清洁溶液和剩余量的纯水。 当清洁具有硅锗层的硅衬底时，可以防止暴露的硅锗层的损坏。 可以有效地除去存在于硅锗层的表面部分上的杂质。

    Etching solution for removal of oxide film, method for preparing the same, and method of fabricating semiconductor device
    4.
    发明申请
    Etching solution for removal of oxide film, method for preparing the same, and method of fabricating semiconductor device 审中-公开
    用于去除氧化膜的蚀刻溶液，其制备方法以及制造半导体器件的方法

    公开(公告)号：US20060183297A1

    公开(公告)日：2006-08-17

    申请号：US11130030

    申请日：2005-05-16

    申请人： Chang-Sup Mun ,  Hyung-Ho Ko ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    发明人： Chang-Sup Mun ,  Hyung-Ho Ko ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    IPC分类号： H01L21/30 ,  H01L21/302 ,  H01L21/46

    CPC分类号： H01L21/31111 ,  H01L21/76224 ,  H01L28/40

    摘要： Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R1—OSO3−HA+, R1—CO2−HA+, R1—PO42−(HA+)2, (R1)2—PO4−HA+, or R1—SO3−HA+ where R1 is a straight or branched hydrocarbon group of C4 to C22 and A is ammonia or amine. The etching solution provides a high etching selectivity ratio of an oxide film to a nitride film or a polysilicon film. Therefore, in a semiconductor device fabrication process such as a STI device isolation process or a capacitor formation process, when an oxide film is exposed together with a nitride film or a polysilicon film, the etching solution can be efficiently used in selectively removing only the oxide film.

    摘要翻译： 提供了一种用于去除氧化膜的含阴离子表面活性剂的蚀刻溶液，其制备方法以及使用该蚀刻溶液制造半导体器件的方法。 蚀刻溶液包括氢氟酸（HF），去离子水和阴离子表面活性剂。 阴离子表面活性剂是其中加入作为抗衡离子的动物盐的化合物，如R 1〜N 3 O 3 - R 1，R 2，R 1，R 1，...，R 1， （R 1）2 - - - - - （4）其中R 1，R 2， / SUB>）2 + 或 其中R 1是C 4的直链或支链烃基，其中R 1是直链或支链C 1 -C 4烷基， C 22和A是氨或胺。 蚀刻溶液提供氧化膜与氮化物膜或多晶硅膜的高蚀刻选择性比。 因此，在诸如STI器件隔离处理或电容器形成工艺的半导体器件制造工艺中，当氧化物膜与氮化物膜或多晶硅膜一起暴露时，可以有效地使用蚀刻溶液来仅选择性地除去氧化物 电影。

    Methods for cleaning a semiconductor substrate having a recess channel region
    6.
    发明申请
    Methods for cleaning a semiconductor substrate having a recess channel region 失效
    用于清洁具有凹槽通道区域的半导体衬底的方法

    公开(公告)号：US20060030117A1

    公开(公告)日：2006-02-09

    申请号：US11194794

    申请日：2005-08-01

    申请人： Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Dong-Gyun Han

    发明人： Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Dong-Gyun Han

    IPC分类号： H01L21/76 ,  H01L21/302

    CPC分类号： H01L21/30604 ,  H01L21/0206 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823481 ,  Y10S438/906

    摘要： A method for cleaning a semiconductor substrate forming device isolation layers in a predetermined region of a semiconductor substrate to define active regions; etching predetermined areas of the active regions to form a recess channel region and such that sidewalls of the device isolation layers are exposed; and selectively etching a surface of the recess channel region using a predetermined cleaning solution to clean the semiconductor substrate where the recess channel region has been formed.

    摘要翻译： 一种用于清洁在半导体衬底的预定区域中形成器件隔离层的半导体衬底以限定有源区域的方法; 蚀刻有源区域的预定区域以形成凹陷沟道区域，并且使得器件隔离层的侧壁被暴露; 并且使用预定的清洗溶液选择性地蚀刻凹槽通道区域的表面，以清洁已经形成凹槽通道区域的半导体衬底。

    Method of manufacturing shallow trench isolation structure using HF vapor etching process
    8.
    发明申请
    Method of manufacturing shallow trench isolation structure using HF vapor etching process 审中-公开
    使用HF蒸汽蚀刻工艺制造浅沟槽隔离结构的方法

    公开(公告)号：US20050074948A1

    公开(公告)日：2005-04-07

    申请号：US10949426

    申请日：2004-09-24

    申请人： Hyung-Ho Ko ,  Woo-Gwan Shim ,  Yu-Kyung Kim ,  Chang-Ki Hong ,  Sang-Jun Choi

    发明人： Hyung-Ho Ko ,  Woo-Gwan Shim ,  Yu-Kyung Kim ,  Chang-Ki Hong ,  Sang-Jun Choi

    IPC分类号： H01L21/762 ,  H01L21/76

    CPC分类号： H01L21/76224

    摘要： In a method of manufacturing a shallow trench isolation (STI) structure using a HF vapor etching process according to some embodiments of the invention, a trench is formed in a semiconductor substrate. A buffer layer and a first insulating layer, which fill the trench, are formed. A portion of the first insulating layer is removed by performing an etching process using HF vapor, thereby removing a void existing in the first insulating layer. A second insulating layer filling the trench is formed on the etched first insulating layer. Other embodiments of the invention are described and claimed.

    摘要翻译： 在根据本发明的一些实施例的使用HF蒸汽蚀刻工艺制造浅沟槽隔离（STI）结构的方法中，在半导体衬底中形成沟槽。 形成填充沟槽的缓冲层和第一绝缘层。 通过使用HF蒸气进行蚀刻处理来去除第一绝缘层的一部分，从而去除存在于第一绝缘层中的空隙。 在蚀刻的第一绝缘层上形成填充沟槽的第二绝缘层。 描述和要求保护本发明的其它实施例。