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    Cleaning solution of silicon germanium layer and cleaning method using the same
    1.
    发明授权
    Cleaning solution of silicon germanium layer and cleaning method using the same 有权
    硅锗层的清洗液和使用其的清洗方法

    公开(公告)号：US07435301B2

    公开(公告)日：2008-10-14

    申请号：US11104829

    申请日：2005-04-13

    申请人： Chang-Sup Mun ,  Doo-Won Kwon ,  Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi

    发明人： Chang-Sup Mun ,  Doo-Won Kwon ,  Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi

    IPC分类号： C23G1/16

    CPC分类号： H01L21/02052 ,  C11D1/66 ,  C11D1/72 ,  C11D3/044 ,  C11D11/0047 ,  H01L21/3081 ,  Y10S134/902

    摘要： Disclosed are a cleaning solution for preventing damage of a silicon germanium layer when cleaning a semiconductor device including the silicon germanium layer and a cleaning method using the same. The cleaning solution of a silicon germanium layer includes from about 0.01 to about 2.5 percent by weight of a non-ionic surfactant with respect to 100 percent by weight of the cleaning solution, about 0.05 to about 5.0 percent by weight of an alkaline compound with respect to the cleaning solution and a remaining amount of pure water. The damage to an exposed silicon germanium layer can be prevented when cleaning a silicon substrate having a silicon germanium layer. Impurities present on the surface portion of the silicon germanium layer can be effectively removed.

    摘要翻译： 公开了一种用于在清洁包括硅锗层的半导体器件时的防止硅锗层损坏的清洁溶液以及使用其的清洁方法。 硅锗层的清洁溶液包括约0.01至约2.5重量％的非离子表面活性剂相对于100重量％的清洁溶液，约0.05至约5.0重量％的碱性化合物，相对于 到清洁溶液和剩余量的纯水。 当清洁具有硅锗层的硅衬底时，可以防止暴露的硅锗层的损坏。 可以有效地除去存在于硅锗层的表面部分上的杂质。

    Etching solution for removal of oxide film, method for preparing the same, and method of fabricating semiconductor device
    3.
    发明申请
    Etching solution for removal of oxide film, method for preparing the same, and method of fabricating semiconductor device 审中-公开
    用于去除氧化膜的蚀刻溶液，其制备方法以及制造半导体器件的方法

    公开(公告)号：US20060183297A1

    公开(公告)日：2006-08-17

    申请号：US11130030

    申请日：2005-05-16

    申请人： Chang-Sup Mun ,  Hyung-Ho Ko ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    发明人： Chang-Sup Mun ,  Hyung-Ho Ko ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    IPC分类号： H01L21/30 ,  H01L21/302 ,  H01L21/46

    CPC分类号： H01L21/31111 ,  H01L21/76224 ,  H01L28/40

    摘要： Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R1—OSO3−HA+, R1—CO2−HA+, R1—PO42−(HA+)2, (R1)2—PO4−HA+, or R1—SO3−HA+ where R1 is a straight or branched hydrocarbon group of C4 to C22 and A is ammonia or amine. The etching solution provides a high etching selectivity ratio of an oxide film to a nitride film or a polysilicon film. Therefore, in a semiconductor device fabrication process such as a STI device isolation process or a capacitor formation process, when an oxide film is exposed together with a nitride film or a polysilicon film, the etching solution can be efficiently used in selectively removing only the oxide film.

    摘要翻译： 提供了一种用于去除氧化膜的含阴离子表面活性剂的蚀刻溶液，其制备方法以及使用该蚀刻溶液制造半导体器件的方法。 蚀刻溶液包括氢氟酸（HF），去离子水和阴离子表面活性剂。 阴离子表面活性剂是其中加入作为抗衡离子的动物盐的化合物，如R 1〜N 3 O 3 - R 1，R 2，R 1，R 1，...，R 1， （R 1）2 - - - - - （4）其中R 1，R 2， / SUB>）2 + 或 其中R 1是C 4的直链或支链烃基，其中R 1是直链或支链C 1 -C 4烷基， C 22和A是氨或胺。 蚀刻溶液提供氧化膜与氮化物膜或多晶硅膜的高蚀刻选择性比。 因此，在诸如STI器件隔离处理或电容器形成工艺的半导体器件制造工艺中，当氧化物膜与氮化物膜或多晶硅膜一起暴露时，可以有效地使用蚀刻溶液来仅选择性地除去氧化物 电影。

    ETCHING SOLUTION FOR REMOVAL OF OXIDE FILM, METHOD FOR PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    4.
    发明申请
    ETCHING SOLUTION FOR REMOVAL OF OXIDE FILM, METHOD FOR PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
    用于除去氧化膜的蚀刻溶液，其制备方法和制备半导体器件的方法

    公开(公告)号：US20090023265A1

    公开(公告)日：2009-01-22

    申请号：US12243728

    申请日：2008-10-01

    申请人： CHANG-SUP MUN ,  Hyung-Ho Ko ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    发明人： CHANG-SUP MUN ,  Hyung-Ho Ko ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    IPC分类号： H01L21/762 ,  H01L21/306 ,  H01L21/02

    CPC分类号： H01L21/31111 ,  H01L21/76224 ,  H01L28/40

    摘要： Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R1—OSO3−HA+, R1—CO2−HA+,R1—PO42—(HA+)2,(R1)2—PO4—HA+, or R1—SO3—HA+ where R1 is a straight or branched hydrocarbon group of C4 to C22 and A is ammonia or amine. The etching solution provides a high etching selectivity ratio of an oxide film to a nitride film or a polysilicon film. Therefore, in a semiconductor device fabrication process such as a STI device isolation process or a capacitor formation process, when an oxide film is exposed together with a nitride film or a polysilicon film, the etching solution can be efficiently used in selectively removing only the oxide film.

    摘要翻译： 提供了一种用于去除氧化膜的含阴离子表面活性剂的蚀刻溶液，其制备方法以及使用该蚀刻溶液制造半导体器件的方法。 蚀刻溶液包括氢氟酸（HF），去离子水和阴离子表面活性剂。 阴离子表面活性剂是其中以R1-OSO3-HA +，R1-CO2-HA +，R1-PO42-（HA +）2，（R1）2-PO4-HA + 或R1-SO3-HA +，其中R1是C4至C22的直链或支链烃基，A是氨或胺。 蚀刻溶液提供氧化膜与氮化物膜或多晶硅膜的高蚀刻选择性比。 因此，在诸如STI器件隔离处理或电容器形成工艺的半导体器件制造工艺中，当氧化物膜与氮化物膜或多晶硅膜一起暴露时，可以有效地使用蚀刻溶液来仅选择性地除去氧化物 电影。

    Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device
    6.
    发明申请
    Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device 有权
    用于清洁具有暴露的硅和锗锗层的衬底的方法和用于制造半导体器件的相关方法

    公开(公告)号：US20070072431A1

    公开(公告)日：2007-03-29

    申请号：US11527473

    申请日：2006-09-27

    申请人： Chang-Sup Mun ,  Woo-Gwan Shim ,  Han-Ku Cho ,  Chang-Ki Hong ,  Doo-Won Kwon

    发明人： Chang-Sup Mun ,  Woo-Gwan Shim ,  Han-Ku Cho ,  Chang-Ki Hong ,  Doo-Won Kwon

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/02057 ,  H01L21/02082

    摘要： A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), and deionized water (H2O), and the second cleaning solution comprises at least 200 times more deionized water (H2O) than ammonium hydroxide (NH4OH) by volume.

    摘要翻译： 公开了一种用于清洁其上形成和暴露硅层和硅锗层的衬底的方法，以及使用该清洁方法制造半导体器件的方法。 该清洗方法包括：制备半导体衬底，在其上形成和暴露硅层和硅锗层; 以及执行使用第一清洁溶液从半导体衬底去除自然氧化物层的第一清洁子过程。 清洁方法还包括在执行第一清洁子过程之后在半导体衬底上执行第二清洁子处理，其中第二清洁子处理包括使用第二清洁溶液。 此外，第二清洗溶液包括氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2）和去离子水（ H 2 O），并且第二清洁溶液包含比氢氧化铵（NH 4 O 2）少至少200倍的去离子水（H 2 O 2 O） OH）。

    Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device
    7.
    发明授权
    Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device 有权
    用于清洁具有暴露的硅和锗锗层的衬底的方法和用于制造半导体器件的相关方法

    公开(公告)号：US07344999B2

    公开(公告)日：2008-03-18

    申请号：US11527473

    申请日：2006-09-27

    申请人： Chang-Sup Mun ,  Woo-Gwan Shim ,  Han-Ku Cho ,  Chang-Ki Hong ,  Doo-Won Kwon

    发明人： Chang-Sup Mun ,  Woo-Gwan Shim ,  Han-Ku Cho ,  Chang-Ki Hong ,  Doo-Won Kwon

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02057 ,  H01L21/02082

    摘要： A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), and deionized water (H2O), and the second cleaning solution comprises at least 200 times more deionized water (H2O) than ammonium hydroxide (NH4OH) by volume.

    摘要翻译： 公开了一种用于清洁其上形成和暴露硅层和硅锗层的衬底的方法，以及使用该清洁方法制造半导体器件的方法。 该清洗方法包括：制备半导体衬底，在其上形成和暴露硅层和硅锗层; 以及执行使用第一清洁溶液以从半导体衬底去除自然氧化物层的第一清洁子过程。 清洁方法还包括在执行第一清洁子过程之后在半导体衬底上执行第二清洁子处理，其中第二清洁子处理包括使用第二清洁溶液。 此外，第二清洗溶液包括氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2）和去离子水（ H 2 O），并且第二清洁溶液包含比氢氧化铵（NH 4 O 2）少至少200倍的去离子水（H 2 O 2 O） OH）。

    Cleaning composition and method of cleaning a semiconductor device using the same
    8.
    发明授权
    Cleaning composition and method of cleaning a semiconductor device using the same 有权
    使用该半导体器件的清洁组合物和清洁半导体器件的方法

    公开(公告)号：US07309683B2

    公开(公告)日：2007-12-18

    申请号：US11038585

    申请日：2005-01-19

    申请人： Chang-Sup Mun ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Sung Han

    发明人： Chang-Sup Mun ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Sung Han

    IPC分类号： C11D1/12

    CPC分类号： H01L21/02071 ,  C11D1/146 ,  C11D3/0073 ,  C11D3/2031 ,  C11D3/2055 ,  C11D3/3409 ,  C11D3/3427 ,  C11D11/0047

    摘要： A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO3—HA+ wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.

    摘要翻译： 清洁组合物包含碱溶液，纯水和由以下化学式表示的表面活性剂：其中R 1是选自下列化学式的一种： 由丁基，异丁基，异辛基，壬基苯基，辛基苯基，癸基，十三烷基，月桂基，肉豆蔻基，鲸蜡基，硬脂基，油基 基团，丙烯酰基和苯丙基，A是选自氨，乙醇胺，二乙醇胺和三乙醇胺中的一种。

    Methods for cleaning a semiconductor substrate having a recess channel region
    10.
    发明申请
    Methods for cleaning a semiconductor substrate having a recess channel region 失效
    用于清洁具有凹槽通道区域的半导体衬底的方法

    公开(公告)号：US20060030117A1

    公开(公告)日：2006-02-09

    申请号：US11194794

    申请日：2005-08-01

    申请人： Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Dong-Gyun Han

    发明人： Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Dong-Gyun Han

    IPC分类号： H01L21/76 ,  H01L21/302

    CPC分类号： H01L21/30604 ,  H01L21/0206 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823481 ,  Y10S438/906

    摘要： A method for cleaning a semiconductor substrate forming device isolation layers in a predetermined region of a semiconductor substrate to define active regions; etching predetermined areas of the active regions to form a recess channel region and such that sidewalls of the device isolation layers are exposed; and selectively etching a surface of the recess channel region using a predetermined cleaning solution to clean the semiconductor substrate where the recess channel region has been formed.

    摘要翻译： 一种用于清洁在半导体衬底的预定区域中形成器件隔离层的半导体衬底以限定有源区域的方法; 蚀刻有源区域的预定区域以形成凹陷沟道区域，并且使得器件隔离层的侧壁被暴露; 并且使用预定的清洗溶液选择性地蚀刻凹槽通道区域的表面，以清洁已经形成凹槽通道区域的半导体衬底。