SHOWERHEAD AND CHEMICAL VAPOR DEPOSITION APPARATUS INCLUDING THE SAME
    2.
    发明申请
    SHOWERHEAD AND CHEMICAL VAPOR DEPOSITION APPARATUS INCLUDING THE SAME 审中-公开
    淋浴和化学气相沉积装置,包括它们

    公开(公告)号:US20100024727A1

    公开(公告)日:2010-02-04

    申请号:US12407347

    申请日:2009-03-19

    IPC分类号: C23C16/44

    CPC分类号: C23C16/45502 C23C16/45565

    摘要: Provided is a showerhead that can inject a reaction gas into a reaction chamber in a manner such that the injected reaction gas form a spiral vortex flow field. Therefore, the injected reaction gas can be mixed within a shorter distance, and thus the effective deposition radius of a wafer can be increased so that uniform-density deposition can be performed on the entire surface of the wafer using the mixed reaction gas.

    摘要翻译: 提供一种喷射器,其能够以使得注入的反应气体形成螺旋涡流场的方式将反应气体注入反应室。 因此,注入的反应气体可以在更短的距离内混合,从而可以提高晶片的有效沉积半径,从而可以使用混合反应气体在晶片的整个表面上进行均匀的浓度沉积。

    Chemical vapor deposition apparatus
    3.
    发明授权
    Chemical vapor deposition apparatus 有权
    化学气相沉积装置

    公开(公告)号:US08298338B2

    公开(公告)日:2012-10-30

    申请号:US12259709

    申请日:2008-10-28

    摘要: Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.

    摘要翻译: 提供了一种化学气相沉积设备。 该装置包括反应室,气体引入单元和排气单元。 反应室包括其上装载有晶片的基座和通过化学气相沉积处理晶片的反应炉。 气体引入单元设置在反应室的外壁处,以将反应气体从反应炉的外部供应到反应炉的中心部分。 在反应气体用于反应炉中的反应之后,排气单元设置在反应室的中心部分,以将反应气体排出到反应室的上部或下部。 因此,即使当生长高温沉积层的工艺压力增加时,室内的气体密度也可以保持在基本均匀的状态。

    BIOMOLECULE DETECTION APPARATUS AND BIOMOLECULE MEASUREMENT SYSTEM
    4.
    发明申请
    BIOMOLECULE DETECTION APPARATUS AND BIOMOLECULE MEASUREMENT SYSTEM 审中-公开
    生物分子检测装置和生物分子测量系统

    公开(公告)号:US20100178690A1

    公开(公告)日:2010-07-15

    申请号:US12501352

    申请日:2009-07-10

    IPC分类号: C12M1/34

    摘要: The present invention relates to a biomolecule detection apparatus and a biomolecule measurement system. A biomolecule detection apparatus according to an aspect of the invention may include: an upper disc having a fluid inlet in a thickness direction through which a fluid is introduced to the inside; a lower disc laminated to the upper disc and having a fluid outlet in a thickness direction through which the fluid exits to the outside; detection units provided on each of the upper disc and the lower disc and including spherical microbeads having surfaces coated with materials used to capture biomolecules; and via holes provided along the edge of each of the upper disc and the lower disc so that the fluid flows between the upper disc and the lower disc.According to the present invention, a biomolecule detection apparatus that achieves excellent performance in the detection of rare cells and has a biochip structure to ensure quality mass production, and a biomolecule measurement system that can accurately and easily measure the biomolecules captured by the biomolecule detection apparatus can be provided.

    摘要翻译: 本发明涉及生物分子检测装置和生物分子测定系统。 根据本发明的一个方面的生物分子检测装置可以包括:上盘,其具有沿着厚度方向的流体入口,流体通过所述流体入口被引入到内部; 下盘,层压到上盘,并且在厚度方向上具有流体出口,流体通过该流体出口到外部; 检测单元设置在每个上盘和下盘上并且包括具有涂覆有用于捕获生物分子的材料的表面的球形微珠; 以及沿着上盘和下盘中的每一个的边缘设置的通孔,使得流体在上盘和下盘之间流动。 根据本发明,一种生物分子检测装置,其在罕见细胞的检测中具有优异的性能,并且具有生物芯片结构以确保质量大量生产;以及生物分子测量系统,其可以准确且容易地测量由生物分子检测装置捕获的生物分子 可以提供。

    Nitride semiconductor light emitting diode
    6.
    发明授权
    Nitride semiconductor light emitting diode 失效
    氮化物半导体发光二极管

    公开(公告)号:US07935970B2

    公开(公告)日:2011-05-03

    申请号:US12258292

    申请日:2008-10-24

    IPC分类号: H01L27/15

    CPC分类号: H01L33/32 H01L33/02

    摘要: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

    摘要翻译: 氮化物半导体发光二极管(LED)包括n型氮化物半导体层; 形成在所述n型氮化物半导体层上的电子发射层,所述电子发射层由包含III族过渡元素的氮化物半导体层组成; 形成在电子发射层上的有源层; 以及形成在有源层上的p型氮化物半导体层。

    Nitride semiconductor light emitting diode
    7.
    发明授权
    Nitride semiconductor light emitting diode 失效
    氮化物半导体发光二极管

    公开(公告)号:US07851808B2

    公开(公告)日:2010-12-14

    申请号:US12259073

    申请日:2008-10-27

    IPC分类号: H01L27/15

    CPC分类号: H01L33/32 H01L33/02

    摘要: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

    摘要翻译: 氮化物半导体发光二极管(LED)包括n型氮化物半导体层; 形成在所述n型氮化物半导体层上的电子发射层,所述电子发射层由包含III族过渡元素的氮化物半导体层组成; 形成在电子发射层上的有源层; 以及形成在有源层上的p型氮化物半导体层。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE
    9.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE 失效
    氮化物半导体发光二极管

    公开(公告)号:US20090090921A1

    公开(公告)日:2009-04-09

    申请号:US12258328

    申请日:2008-10-24

    IPC分类号: H01L33/00

    CPC分类号: H01L33/32 H01L33/02

    摘要: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

    摘要翻译: 氮化物半导体发光二极管(LED)包括n型氮化物半导体层; 形成在所述n型氮化物半导体层上的电子发射层,所述电子发射层由包含III族过渡元素的氮化物半导体层组成; 形成在电子发射层上的有源层; 以及形成在有源层上的p型氮化物半导体层。

    Nitride semiconductor light emitting diode
    10.
    发明申请
    Nitride semiconductor light emitting diode 审中-公开
    氮化物半导体发光二极管

    公开(公告)号:US20080042161A1

    公开(公告)日:2008-02-21

    申请号:US11797492

    申请日:2007-05-03

    IPC分类号: H01L33/00

    CPC分类号: H01L33/04 H01L33/32

    摘要: A nitride semiconductor light emitting diode includes: an n-type clad layer; an active layer formed on the n-type clad layer; an electron blocking layer formed on the active layer, the electron blocking layer being composed of a p-type nitride semiconductor including a transition element of group III; and a p-type clad layer formed on the electron blocking layer.

    摘要翻译: 氮化物半导体发光二极管包括:n型覆盖层; 形成在n型覆层上的有源层; 形成在所述有源层上的电子阻挡层,所述电子阻挡层由包含III族过渡元素的p型氮化物半导体构成; 以及形成在电子阻挡层上的p型覆盖层。