Micro-dynode integrated electron multiplier
    1.
    发明授权
    Micro-dynode integrated electron multiplier 失效
    微倍增极集成电子倍增器

    公开(公告)号:US06384519B1

    公开(公告)日:2002-05-07

    申请号:US08960759

    申请日:1997-10-30

    IPC分类号: H01J4320

    CPC分类号: H01J43/246 H01J43/22

    摘要: A microdynode electron multiplier provides numerous microchannels extending parallel to one another through a layered structure incorporating insulating spacer layers and dynode layers which either incorporate a conductive electrode layer or are contiguous with a conductive electrode layer. The dynode layers include materials with high electron emissivity. The dynode layers can be biased to different electrical potentials to provide a potential gradient along the length of each microchannel. Multi-stage electron multiplication provides high gain. The device desirably is formed as a monolithic, sealed structure with a cathode structure such as a photocathode and an anode structure. The device can provide a multi pixel imaging device of extremely high sensitivity and resolution.

    摘要翻译: 微型电子电子倍增器通过结合有绝缘间隔层和倍增极层的分层结构彼此平行延伸,提供了许多微通道,其中结合有导电电极层或与导电电极层邻接。 倍增极层包括具有高电子发射率的材料。 倍增极层可以被偏置到不同的电势以沿着每个微通道的长度提供电位梯度。 多级电子倍增提供高增益。 该装置理想地形成为具有诸如光电阴极和阳极结构的阴极结构的整体式密封结构。 该器件可以提供极高灵敏度和分辨率的多像素成像设备。

    Magnetic memory having shape anisotropic magnetic elements
    2.
    发明授权
    Magnetic memory having shape anisotropic magnetic elements 失效
    具有形状各向异性磁性元件的磁记忆体

    公开(公告)号:US5741435A

    公开(公告)日:1998-04-21

    申请号:US512555

    申请日:1995-08-08

    摘要: A static magnetic memory includes a layer having a plurality of vertically oriented and shape-anisotropic elongated ferromagnetic particles. A plurality of writing conductors are adjacent the layer, and the conductors selectively apply magnetic fields to selected regions of the layer by directing electrical current to magnetize the particles in an up or down direction. Static reading means detect the direction of magnetization. The particles may include a soft magnet portion and a hard magnet portion. In another preferred embodiment, a material and a method of making same includes providing a matrix full of elongated holes, depositing a first magnetic material having a first coercivity into the holes, and then depositing a second magnetic material having a second coercivity into the holes to form a composite elongated particle in each hole.

    摘要翻译: 静磁存储器包括具有多个垂直取向和形状各向异性的细长铁磁颗粒的层。 多个写入导体与层相邻,并且导体通过引导电流在上或下方向上磁化颗粒而选择性地将磁场施加到层的选定区域。 静态读数意味着检测磁化方向。 颗粒可以包括软磁体部分和硬磁体部分。 在另一优选实施例中,材料及其制造方法包括提供充满细长孔的矩阵,将具有第一矫顽力的第一磁性材料沉积到孔中,然后将具有第二矫顽力的第二磁性材料沉积到孔中 在每个孔中形成复合细长颗粒。

    Metallic Nanowire Arrays and Methods for Making and Using Same
    7.
    发明申请
    Metallic Nanowire Arrays and Methods for Making and Using Same 审中-公开
    金属纳米线阵列及其制造和使用方法

    公开(公告)号:US20110045230A1

    公开(公告)日:2011-02-24

    申请号:US12716135

    申请日:2010-03-02

    IPC分类号: B32B3/02

    摘要: Freestanding metallic nanowires attached to a metallic substrate are disclosed. A method of creating the nanowire structure using an anodized layer is presented. In one embodiment an optical SERS sensor is formed. The sensor head has at least one array of nanowires chemically functionalized to recognize molecules of interest. A method of forming a SERS sensor and using the sensor to analyze a sample is presented.

    摘要翻译: 公开了附着在金属基底上的独立金属纳米线。 提出了使用阳极氧化层制造纳米线结构的方法。 在一个实施例中,形成光学SERS传感器。 传感器头具有化学官能化以识别感兴趣的分子的至少一个纳米线阵列。 提出了一种形成SERS传感器并使用传感器分析样品的方法。

    Metallic nanowire arrays and methods for making and using same
    8.
    发明授权
    Metallic nanowire arrays and methods for making and using same 失效
    金属纳米线阵列及其制造和使用方法

    公开(公告)号:US07713849B2

    公开(公告)日:2010-05-11

    申请号:US11206632

    申请日:2005-08-18

    IPC分类号: H01L21/00

    摘要: Freestanding metallic nanowires attached to a metallic substrate are disclosed. A method of creating the nanowire structure using an anodized layer is presented. In one embodiment an optical SERS sensor is formed. The sensor head has at least one array of nanowires chemically functionalized to recognize molecules of interest. A method of forming a SERS sensor and using the sensor to analyze a sample is presented.

    摘要翻译: 公开了附着在金属基底上的独立金属纳米线。 提出了使用阳极氧化层制造纳米线结构的方法。 在一个实施例中,形成光学SERS传感器。 传感器头具有化学官能化以识别感兴趣的分子的至少一个纳米线阵列。 提出了一种形成SERS传感器并使用传感器分析样品的方法。

    PHOTOVOLTAIC WIRE
    10.
    发明申请
    PHOTOVOLTAIC WIRE 审中-公开
    光电线

    公开(公告)号:US20090266411A1

    公开(公告)日:2009-10-29

    申请号:US11917505

    申请日:2006-06-16

    摘要: A photovoltaic wire is presented where the active layers coat a metallic wire, preferably aluminum. The active layers are an array of doped silicon nanowires electrically attached to the metallic wire that extend from the surface of the wire into a layer of semiconducting polymer, preferably polyaniline. The surface of the polymer is coated with a transparent conductor to complete the photovoltaic circuit.

    摘要翻译: 存在光电线,其中有源层涂覆金属线,优选铝。 有源层是电连接到金属线的掺杂的硅纳米线的阵列,其从线的表面延伸到半导体聚合物,优选聚苯胺层中。 聚合物的表面涂覆有透明导体以完成光伏电路。