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1.发明授权Nonvolatile memory device using semiconductor nanocrystals and method forming same 有权使用半导体纳米晶体的非易失性存储器件及其形成方法公开(公告)号：US08273665B2
公开(公告)日：2012-09-25
申请号：US12545010
申请日：2009-08-20
IPC分类号： H01L21/311 , H01L21/8247
CPC分类号： H01L29/66825 , B82Y10/00 , G11C2216/06 , H01L21/02118 , H01L21/02227 , H01L21/02532 , H01L21/02636 , H01L21/28273 , H01L21/28282 , H01L21/31111 , H01L29/42332 , H01L29/7887 , H01L29/7923 , Y10S438/947 , Y10S977/78 , Y10S977/783 , Y10S977/813 , Y10S977/856 , Y10S977/883 , Y10S977/888 , Y10S977/893
摘要： A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over said porous dielectric film, and anisotropically and selectively etching said deposited material.
摘要翻译： 一种制造纳米颗粒阵列的方法，其包括将自组装膜的尺寸复制到电介质膜中，以形成多孔电介质膜，在所述多孔介电膜上共形沉积材料，并各向异性地选择性地蚀刻所述沉积材料。
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2.发明申请NONVOLATIVE MEMORY DEVICE USING SEMICONDUCTOR NANOCRYSTALS AND METHOD OF FORMING SAME 有权使用半导体纳米晶体的非易失性存储器件及其形成方法公开(公告)号：US20110201182A1
公开(公告)日：2011-08-18
申请号：US13095577
申请日：2011-04-27
IPC分类号： H01L21/20
CPC分类号： H01L29/66825 , B82Y10/00 , G11C2216/06 , H01L21/02118 , H01L21/02227 , H01L21/02532 , H01L21/02636 , H01L21/28273 , H01L21/28282 , H01L21/31111 , H01L29/42332 , H01L29/7887 , H01L29/7923 , Y10S438/947 , Y10S977/78 , Y10S977/783 , Y10S977/813 , Y10S977/856 , Y10S977/883 , Y10S977/888 , Y10S977/893
摘要： A method of making a uniform nanoparticle array, including performing diblock copolymer thin film self assembly over a first dielectric on silicon, creating a porous polymer film, transferring a pattern into the first dielectric, selectively growing epitaxial silicon off a silicon substrate from within pores to create a silicon nanoparticle array.
摘要翻译： 一种制备均匀纳米颗粒阵列的方法，包括在硅上的第一介电体上进行二嵌段共聚物薄膜自组装，产生多孔聚合物膜，将图案转移到第一介电体中，从孔内选择性地将硅衬底从外延生长到硅衬底 创建一个硅纳米颗粒阵列。
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3.发明授权Method of forming a nonvolatile memory device using semiconductor nanoparticles 有权使用半导体纳米颗粒形成非易失性存储器件的方法公开(公告)号：US07985686B2
公开(公告)日：2011-07-26
申请号：US11373127
申请日：2006-03-13
IPC分类号： H01L21/311 , H01L21/8247
CPC分类号： H01L29/66825 , B82Y10/00 , G11C2216/06 , H01L21/02118 , H01L21/02227 , H01L21/02532 , H01L21/02636 , H01L21/28273 , H01L21/28282 , H01L21/31111 , H01L29/42332 , H01L29/7887 , H01L29/7923 , Y10S438/947 , Y10S977/78 , Y10S977/783 , Y10S977/813 , Y10S977/856 , Y10S977/883 , Y10S977/888 , Y10S977/893
摘要： A floating gate for a field effect transistor (and method for forming the same and method of forming a uniform nanoparticle array), includes a plurality of discrete nanoparticles in which at least one of a size, spacing, and density of the nanoparticles is one of templated and defined by a self-assembled material.
摘要翻译： 用于场效应晶体管的浮动栅极（及其形成方法和形成均匀的纳米颗粒阵列的方法）包括多个离散的纳米颗粒，其中纳米颗粒的尺寸，间距和密度中的至少一个是其中之一 模板化并由自组装材料限定。
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4.发明授权Nonvolatile memory device using semiconductor nanocrystals and method of forming same 有权使用半导体纳米晶体的非易失性存储器件及其形成方法公开(公告)号：US08987138B2
公开(公告)日：2015-03-24
申请号：US13025018
申请日：2011-02-10
IPC分类号： H01L21/311 , B82Y10/00 , H01L21/28 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L29/66825 , B82Y10/00 , G11C2216/06 , H01L21/02118 , H01L21/02227 , H01L21/02532 , H01L21/02636 , H01L21/28273 , H01L21/28282 , H01L21/31111 , H01L29/42332 , H01L29/7887 , H01L29/7923 , Y10S438/947 , Y10S977/78 , Y10S977/783 , Y10S977/813 , Y10S977/856 , Y10S977/883 , Y10S977/888 , Y10S977/893
摘要： A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over the said porous dielectric film, and anisotropically and selectively etching the deposited material.
摘要翻译： 一种制造纳米颗粒阵列的方法，其包括将自组装膜的尺寸复制到电介质膜中，以形成多孔电介质膜，在所述多孔介电膜上保形地沉积材料，并各向异性地选择性地蚀刻沉积的材料。
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5.发明授权Nonvolative memory device using semiconductor nanocrystals and method of forming same 有权使用半导体纳米晶体的非线性存储器件及其形成方法公开(公告)号：US08247292B2
公开(公告)日：2012-08-21
申请号：US13095577
申请日：2011-04-27
IPC分类号： H01L21/8247
CPC分类号： H01L29/66825 , B82Y10/00 , G11C2216/06 , H01L21/02118 , H01L21/02227 , H01L21/02532 , H01L21/02636 , H01L21/28273 , H01L21/28282 , H01L21/31111 , H01L29/42332 , H01L29/7887 , H01L29/7923 , Y10S438/947 , Y10S977/78 , Y10S977/783 , Y10S977/813 , Y10S977/856 , Y10S977/883 , Y10S977/888 , Y10S977/893
摘要： A method of making a uniform nanoparticle array, including performing diblock copolymer thin film self assembly over a first dielectric on silicon, creating a porous polymer film, transferring a pattern into the first dielectric, selectively growing epitaxial silicon off a silicon substrate from within pores to create a silicon nanoparticle array.
摘要翻译： 一种制备均匀纳米颗粒阵列的方法，包括在硅上的第一介电体上进行二嵌段共聚物薄膜自组装，产生多孔聚合物膜，将图案转移到第一介电体中，从孔内选择性地将硅衬底从外延生长到硅衬底 创建一个硅纳米颗粒阵列。
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6.发明申请NONVOLATILE MEMORY DEVICE USING SEMICONDUCTOR NANOCRYSTALS AND METHOD OF FORMING SAME 有权使用半导体纳米晶体的非易失性存储器件及其形成方法公开(公告)号：US20110129973A1
公开(公告)日：2011-06-02
申请号：US13025018
申请日：2011-02-10
IPC分类号： H01L21/336 , H01L21/20 , B82Y40/00
CPC分类号： H01L29/66825 , B82Y10/00 , G11C2216/06 , H01L21/02118 , H01L21/02227 , H01L21/02532 , H01L21/02636 , H01L21/28273 , H01L21/28282 , H01L21/31111 , H01L29/42332 , H01L29/7887 , H01L29/7923 , Y10S438/947 , Y10S977/78 , Y10S977/783 , Y10S977/813 , Y10S977/856 , Y10S977/883 , Y10S977/888 , Y10S977/893
摘要： A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over the said porous dielectric film, and anisotropically and selectively etching the deposited material.
摘要翻译： 一种制造纳米颗粒阵列的方法，其包括将自组装膜的尺寸复制到电介质膜中，以形成多孔电介质膜，在所述多孔介电膜上保形地沉积材料，并各向异性地选择性地蚀刻沉积的材料。
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7.发明申请NONVOLATILE MEMORY DEVICE USING SEMICONDUCTOR NANOCRYSTALS AND METHOD FORMING SAME 有权使用半导体纳米晶体的非易失性存储器件和形成其的方法公开(公告)号：US20090311851A1
公开(公告)日：2009-12-17
申请号：US12545010
申请日：2009-08-20
IPC分类号： H01L21/20 , H01L21/311
CPC分类号： H01L29/66825 , B82Y10/00 , G11C2216/06 , H01L21/02118 , H01L21/02227 , H01L21/02532 , H01L21/02636 , H01L21/28273 , H01L21/28282 , H01L21/31111 , H01L29/42332 , H01L29/7887 , H01L29/7923 , Y10S438/947 , Y10S977/78 , Y10S977/783 , Y10S977/813 , Y10S977/856 , Y10S977/883 , Y10S977/888 , Y10S977/893
摘要： A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over said porous dielectric film, and anisotropically and selectively etching said deposited material.
摘要翻译： 一种制造纳米颗粒阵列的方法，其包括将自组装膜的尺寸复制到电介质膜中，以形成多孔电介质膜，在所述多孔介电膜上共形沉积材料，并各向异性地选择性地蚀刻所述沉积材料。
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8.发明授权Nonvolatile memory device using semiconductor nanocrystals and method of forming same 有权使用半导体纳米晶体的非易失性存储器件及其形成方法公开(公告)号：US07045851B2
公开(公告)日：2006-05-16
申请号：US10465797
申请日：2003-06-20
IPC分类号： H01L29/788
CPC分类号： H01L29/66825 , B82Y10/00 , G11C2216/06 , H01L21/02118 , H01L21/02227 , H01L21/02532 , H01L21/02636 , H01L21/28273 , H01L21/28282 , H01L21/31111 , H01L29/42332 , H01L29/7887 , H01L29/7923 , Y10S438/947 , Y10S977/78 , Y10S977/783 , Y10S977/813 , Y10S977/856 , Y10S977/883 , Y10S977/888 , Y10S977/893
摘要： A floating gate for a field effect transistor (and method for forming the same and method of forming a uniform nanoparticle array), includes a plurality of discrete nanoparticles in which at least one of a size, spacing, and density of the nanoparticles is one of templated and defined by a self-assembled material.
摘要翻译： 用于场效应晶体管的浮动栅极（及其形成方法和形成均匀的纳米颗粒阵列的方法）包括多个离散的纳米颗粒，其中纳米颗粒的尺寸，间距和密度中的至少一个是其中之一 模板化并由自组装材料限定。
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9.发明授权公开(公告)号：US07566631B2
公开(公告)日：2009-07-28
申请号：US11411395
申请日：2006-04-26
申请人： Kevin K. Chan , Kathryn Wilder Guarini , Erin C. Jones , Antonio F. Saavedra, Jr. , Leathen Shi , Dinkar V. Singh
发明人： Kevin K. Chan , Kathryn Wilder Guarini , Erin C. Jones , Antonio F. Saavedra, Jr. , Leathen Shi , Dinkar V. Singh
CPC分类号： H01L21/02052 , H01L21/02164 , H01L21/02343 , H01L21/2007 , H01L21/306 , H01L21/3105 , H01L21/31612 , H01L21/31662 , H01L21/76251
摘要： Described is a wet chemical surface treatment involving NH4OH that enables extremely strong direct bonding of two wafer such as semiconductors (e.g., Si) to insulators (e.g., SiO2) at low temperatures (less than or equal to 400° C.). Surface energies as high as ˜4835±675 mJ/m2 of the bonded interface have been achieved using some of these surface treatments. This value is comparable to the values reported for significantly higher processing temperatures (less than 1000° C.). Void free bonding interfaces with excellent yield and surface energies of ˜2500 mJ/m2 have also be achieved herein.
摘要翻译： 描述了涉及NH 4 OH的湿化学表面处理，其能够在低温（小于或等于400℃）下将诸如半导体（例如Si）的两个晶片极度直接结合到绝缘体（例如SiO 2）。 使用这些表面处理中的一些已经实现了接合界面的高达〜4835±675mJ / m 2的表面能。 该值与显着更高的处理温度（小于1000℃）报告的值相当。 这里也可以实现具有优异产率和约2500mJ / m 2的表面能的无空隙结合界面。
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10.发明授权公开(公告)号：US07498640B2
公开(公告)日：2009-03-03
申请号：US10437930
申请日：2003-05-15
申请人： Cyril Cabral, Jr. , Kevin K. Chan , Guy Moshe Cohen , Kathryn Wilder Guarini , Christian Lavoie , Paul Michael Solomon , Ying Zhang
发明人： Cyril Cabral, Jr. , Kevin K. Chan , Guy Moshe Cohen , Kathryn Wilder Guarini , Christian Lavoie , Paul Michael Solomon , Ying Zhang
IPC分类号： H01L29/76 , H01L29/94 , H01L31/119 , H01L31/062 , H01L31/113
CPC分类号： H01L29/6653 , H01L21/28052 , H01L21/28518 , H01L29/41783 , H01L29/456 , H01L29/66507 , H01L29/66772 , H01L29/78618 , H01L29/78684 , H01L2924/0002 , H01L2924/00
摘要： A method (and structure formed thereby) of forming a metal silicide contact on a non-planar silicon containing region having controlled consumption of the silicon containing region, includes forming a blanket metal layer over the silicon containing region, forming a silicon layer over the metal layer, etching anisotropically and selectively with respect to the metal the silicon layer, reacting the metal with silicon at a first temperature to form a metal silicon alloy, etching unreacted portions of the metal layer, annealing at a second temperature to form an alloy of metal-Si2, and selectively etching the unreacted silicon layer.
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