公开(公告)号：US20120012555A1

公开(公告)日：2012-01-19

申请号：US13200305

申请日：2011-09-22

申请人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

公开(公告)号：US08345383B2

公开(公告)日：2013-01-01

申请号：US13200305

申请日：2011-09-22

申请人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

公开(公告)号：US08031433B2

公开(公告)日：2011-10-04

申请号：US12231756

申请日：2008-09-05

申请人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

公开(公告)号：US20100061016A1

公开(公告)日：2010-03-11

申请号：US12231756

申请日：2008-09-05

申请人： Cherng-Chyi Han ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Han ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

公开(公告)号：US20120008236A1

公开(公告)日：2012-01-12

申请号：US13200012

申请日：2011-09-15

申请人： Jiun-Ting Lee ,  Shiwen Huang ,  Moris Dovek

发明人： Jiun-Ting Lee ,  Shiwen Huang ,  Moris Dovek

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49052

摘要： Improved writability and a sharper neck transition are achieved in a PMR writer with a yoke that has essentially vertical sidewalls and a write pole that has sidewalls with a beveled angle. An alumina mold is made with a negative differential bevel angle by employing a two mask process. A first photoresist layer is patterned and etched to form a rectangular trench in an alumina layer. The trench extends beyond the intended ABS plane and in the opposite direction into the intended yoke area. A second photoresist layer is patterned into a yoke shape that is partially superimposed over the rectangular trench. After a second RIE process, the yoke opening adjoins the trench at a neck transition point along each long trench side. The volume of magnetic material in the yoke adjacent to the neck is thereby maximized. Dimension control of the main pole becomes independent of ABS positioning errors.

摘要翻译： 在具有基本垂直侧壁的磁轭和具有倾斜角度的侧壁的写入极的PMR写入器中实现了改进的可写入性和更尖锐的颈部转变。 通过采用两个掩模工艺制造具有负微分斜角的氧化铝模具。 对第一光致抗蚀剂层进行图案化和蚀刻以在氧化铝层中形成矩形沟槽。 沟槽延伸超过预期的ABS平面并且在相反方向延伸到预期的轭区域中。 将第二光致抗蚀剂层图案化为部分地叠置在矩形沟槽上的磁轭形状。 在第二次RIE处理之后，磁轭开口在沿着每个长沟槽侧的颈部转变点处与沟槽相邻。 因此，与颈部相邻的磁轭中的磁性材料的体积最大化。 主极的尺寸控制变得与ABS定位误差无关。

公开(公告)号：US08027125B2

公开(公告)日：2011-09-27

申请号：US11820962

申请日：2007-06-21

申请人： Jiun-Ting Lee ,  Shiwen Huang ,  Moris Dovek

发明人： Jiun-Ting Lee ,  Shiwen Huang ,  Moris Dovek

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49052

摘要： Improved writability and a sharper neck transition are achieved in a PMR writer with a yoke that has essentially vertical sidewalls and a write pole that has sidewalls with a beveled angle. An alumina mold is made with a negative differential bevel angle by employing a two mask process. A first photoresist layer is patterned and etched to form a rectangular trench in an alumina layer. The trench extends beyond the intended ABS plane and in the opposite direction into the intended yoke area. A second photoresist layer is patterned into a yoke shape that is partially superimposed over the rectangular trench. After a second RIE process, the yoke opening adjoins the trench at a neck transition point along each long trench side. The volume of magnetic material in the yoke adjacent to the neck is thereby maximized. Dimension control of the main pole becomes independent of ABS positioning errors.

摘要翻译： 在具有基本垂直侧壁的磁轭和具有倾斜角度的侧壁的写入极的PMR写入器中实现了改进的可写入性和更尖锐的颈部转变。 通过采用两个掩模工艺制造具有负微分斜角的氧化铝模具。 对第一光致抗蚀剂层进行图案化和蚀刻以在氧化铝层中形成矩形沟槽。 沟槽延伸超出预期的ABS平面并且在相反方向延伸到预期的轭区域中。 将第二光致抗蚀剂层图案化为部分地叠置在矩形沟槽上的磁轭形状。 在第二次RIE处理之后，磁轭开口在沿着每个长沟槽侧的颈部转变点处与沟槽相邻。 因此，与颈部相邻的磁轭中的磁性材料的体积最大化。 主极的尺寸控制变得与ABS定位误差无关。

公开(公告)号：US20080316644A1

公开(公告)日：2008-12-25

申请号：US11820962

申请日：2007-06-21

申请人： Jiun-Ting Lee ,  Shiwen Huang ,  Moris Dovek

发明人： Jiun-Ting Lee ,  Shiwen Huang ,  Moris Dovek

IPC分类号： G11B5/127 ,  G11B5/147 ,  B44C1/22

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49052

摘要： Improved writability and a sharper neck transition are achieved in a PMR writer with a yoke that has essentially vertical sidewalls and a write pole that has sidewalls with a beveled angle. An alumina mold is made with a negative differential bevel angle by employing a two mask process. A first photoresist layer is patterned and etched to form a rectangular trench in an alumina layer. The trench extends beyond the intended ABS plane and in the opposite direction into the intended yoke area. A second photoresist layer is patterned into a yoke shape that is partially superimposed over the rectangular trench. After a second RIE process, the yoke opening adjoins the trench at a neck transition point along each long trench side. The volume of magnetic material in the yoke adjacent to the neck is thereby maximized. Dimension control of the main pole becomes independent of ABS positioning errors.

摘要翻译： 在具有基本垂直侧壁的磁轭和具有倾斜角度的侧壁的写入极的PMR写入器中实现了改进的可写入性和更尖锐的颈部转变。 通过采用两个掩模工艺制造具有负微分斜角的氧化铝模具。 对第一光致抗蚀剂层进行图案化和蚀刻以在氧化铝层中形成矩形沟槽。 沟槽延伸超出预期的ABS平面并且在相反方向延伸到预期的轭区域中。 将第二光致抗蚀剂层图案化为部分地叠置在矩形沟槽上的磁轭形状。 在第二次RIE处理之后，磁轭开口在沿着每个长沟槽侧的颈部转变点处与沟槽相邻。 因此，与颈部相邻的磁轭中的磁性材料的体积最大化。 主极的尺寸控制变得与ABS定位误差无关。

公开(公告)号：US20130026131A1

公开(公告)日：2013-01-31

申请号：US13193520

申请日：2011-07-28

申请人： Shiwen Huang ,  Fenglin Liu ,  Qiping Zhong ,  Kyusik Shin ,  Yingjian Chen

发明人： Shiwen Huang ,  Fenglin Liu ,  Qiping Zhong ,  Kyusik Shin ,  Yingjian Chen

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/3163

摘要： The present disclosure describes a method for manufacturing a full wraparound shield damascene write head through the implementation of a three layered (tri-layered) hard mask. According to an embodiment of the invention, the various layers of hard mask are used for different purposes during the formation of a write head. The wraparound shield head of the present invention exhibits improved physical characteristics that further result in improved performance characteristics. Use of the hard mask layers according to the present invention allows for use of manufacturing processes that can be more closely controlled than those processes used in other processes. For example, smaller dimension lithographic techniques can be used. Also, reliance on certain CMP processes is not necessary where the use of CMP processes is not as well-controlled as deposition or lithographic techniques as is possible using the present invention.

摘要翻译： 本公开描述了通过实施三层（三层）硬掩模制造全封装屏蔽镶嵌写头的方法。 根据本发明的实施例，在形成写入头期间，各种硬掩模层用于不同的目的。 本发明的环绕式屏蔽头表现出改进的物理特性，进一步导致改善的性能特征。 根据本发明的硬掩模层的使用允许使用可以比其它工艺中使用的那些方法更加严格地控制的制造工艺。 例如，可以使用较小尺寸的光刻技术。 此外，在使用CMP工艺不如使用本发明可能的沉积或光刻技术那样不受控制的情况下，对某些CMP工艺的依赖是不必要的。

公开(公告)号：US20120125885A1

公开(公告)日：2012-05-24

申请号：US12954458

申请日：2010-11-24

申请人： YINGJIAN CHEN ,  Shiwen Huang ,  Fenglin Liu ,  Kyusik Shin

发明人： YINGJIAN CHEN ,  Shiwen Huang ,  Fenglin Liu ,  Kyusik Shin

IPC分类号： G11B21/00

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/315 ,  G11B5/3163

摘要： A perpendicular write head having a wrap around shield and a conformal side gap. In fabricating the write head, the leading edge shield may be chemical mechanical polished down to a level that is substantially even with a chemical mechanical polishing stop layer. Because the leading edge shield and the chemical mechanical polishing stop layer are used as RIE stop for trench RIE, a fully conformal side shield may be formed with a LTE/LES.

摘要翻译： 垂直写头，其具有围绕屏蔽的保护层和保形侧间隙。 在制造写入头时，前缘屏蔽可以化学机械抛光到基本上均匀的化学机械抛光停止层的水平。 由于前缘屏蔽和化学机械抛光停止层用作沟槽RIE的RIE停止，所以可以用LTE / LES形成完全共形的侧屏蔽。

公开(公告)号：US08801943B2

公开(公告)日：2014-08-12

申请号：US13193520

申请日：2011-07-28

申请人： Shiwen Huang ,  Fenglin Liu ,  Qiping Zhong ,  Kyusik Shin ,  Yingjian Chen

发明人： Shiwen Huang ,  Fenglin Liu ,  Qiping Zhong ,  Kyusik Shin ,  Yingjian Chen

IPC分类号： B44C1/22

CPC分类号： G11B5/3116 ,  G11B5/3163

摘要： The present disclosure describes a method for manufacturing a full wraparound shield damascene write head through the implementation of a three layered (tri-layered) hard mask. According to an embodiment of the invention, the various layers of hard mask are used for different purposes during the formation of a write head. The wraparound shield head of the present invention exhibits improved physical characteristics that further result in improved performance characteristics. Use of the hard mask layers according to the present invention allows for use of manufacturing processes that can be more closely controlled than those processes used in other processes. For example, smaller dimension lithographic techniques can be used. Also, reliance on certain CMP processes is not necessary where the use of CMP processes is not as well-controlled as deposition or lithographic techniques as is possible using the present invention.

摘要翻译： 本公开描述了通过实施三层（三层）硬掩模制造全封装屏蔽镶嵌写头的方法。 根据本发明的实施例，在形成写入头期间，各种硬掩模层用于不同的目的。 本发明的环绕式屏蔽头表现出改进的物理特性，进一步导致改善的性能特征。 根据本发明的硬掩模层的使用允许使用可以比其它工艺中使用的那些方法更加严格地控制的制造工艺。 例如，可以使用较小尺寸的光刻技术。 此外，在使用CMP工艺不如使用本发明可能的沉积或光刻技术那样不受控制的情况下，对某些CMP工艺的依赖是不必要的。