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24 条记录 (耗时 0.031 秒)

    Current enhanced photovoltaic device
    1.
    发明授权
    Current enhanced photovoltaic device 失效
    电流增强型光伏器件

    公开(公告)号：US4379943A

    公开(公告)日：1983-04-12

    申请号：US330571

    申请日：1981-12-14

    申请人： Chi C. Yang ,  Arun Madan ,  Stanford R. Ovshinsky ,  David Adler

    发明人： Chi C. Yang ,  Arun Madan ,  Stanford R. Ovshinsky ,  David Adler

    IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06 ,  H01L31/18

    CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： The disclosure is directed to photovoltaic devices having enhanced short circuit currents and efficiencies. The devices are made by depositing on a previously deposited doped amorphous semiconductor alloy layer a body of intrinsic amorphous semiconductor alloys including a first intrinsic layer, adjacent the doped layer, formed from the deposition of a non-etching starting material and a second intrinsic layer different in composition from the first intrinsic layer. The second intrinsic layer preferably includes silicon and fluorine while the first intrinsic amorphous alloy layer does not include fluorine. The first intrinsic layer may be formed by the glow discharge decomposition of silane gas alone. The thicknesses of the first and second intrinsic layers are adjusted so as to match the respective potential drops thereof with the first intrinsic layer being relatively thin as compared to the second intrinsic layer.

    摘要翻译： 本公开涉及具有增强的短路电流和效率的光伏器件。 这些器件通过在先前沉积的掺杂非晶半导体合金层上沉积本体非晶半导体合金制成，该本体非晶半导体合金包括由非蚀刻起始材料的沉积和不同的第二本征层形成的与掺杂层相邻的第一本征层 在第一本征层的组成中。 第二本征层优选包括硅和氟，而第一本征非晶合金层不包括氟。 第一本征层可以由单独的硅烷气体的辉光放电分解形成。 第一本征层和第二本征层的厚度被调整以使其相应的电位滴与第二本征层相比第一本征层相对较薄。

    Multiple cell photoresponsive amorphous alloys and devices
    2.
    发明授权
    Multiple cell photoresponsive amorphous alloys and devices 失效
    多单元光响应非晶合金和器件

    公开(公告)号：US4891074A

    公开(公告)日：1990-01-02

    申请号：US710947

    申请日：1985-03-13

    申请人： Stanford R. Ovshinsky ,  David Adler

    发明人： Stanford R. Ovshinsky ,  David Adler

    IPC分类号： C23C14/00 ,  C23C14/06 ,  C23C16/24 ,  H01L25/04 ,  H01L29/16 ,  H01L31/0376 ,  H01L31/07 ,  H01L31/20

    CPC分类号： H01L31/076 ,  C23C14/0026 ,  C23C14/06 ,  C23C16/24 ,  H01L29/1604 ,  H01L31/03762 ,  H01L31/043 ,  H01L31/07 ,  H01L31/202 ,  H01L2924/0002 ,  Y02E10/548 ,  Y02P70/521

    摘要： The production of improved multiple cell photoresponsive amorphous devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the alloys in one or more cells of the device. The adjusting element or elements are added at least to the active photoresponsive regions of amorphous cells containing silicon and fluorine, and preferably hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as carbon or nitrogen to increase the band gap. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition. The addition of fluorine bonding and electronegativity to the cell alloy acts as a compensating or altering element to reduce the density of states in the energy gap thereof. The fluorine bond strength allows the adjusting element(s) to be added to the alloy cells to adjust the band gap without reducing the electronic qualities of the cell alloy. Hydrogen also acts as a compensating or altering element to compliment fluorine when utilized therewith. The compensating or altering element(s) can be added to the alloy during deposition of the cells or following deposition. The addition of the adjusting element(s) to the cell alloys adjusts the band gap to a selected optimum wavelength threshold for particular cells to increase the photoabsorption efficiency to enhance the device photoresponsive without adding states in the gap of the cells which decrease the efficiency of the devices. The adjusting element(s) can be added in varying amounts, in discrete layers or in substantially constant amounts in the cell alloys.

    摘要翻译： 改进的多单元光响应非晶体器件如光伏，感光器件等的生产; 通过将一个或多个带隙调节元件添加到该器件的一个或多个单元中的合金，可以实现改进的波长阈值特性。 至少将调整元素添加到含硅和氟，优选氢的非晶体的活性光响应区域中。 一个调节元件是锗，其带隙与材料的带隙相比较窄，而调节元件并入其中。 可以使用其它调节元件，例如碳或氮来增加带隙。 硅和调节元件通过气相沉积，溅射或辉光放电分解同时组合并沉积为非晶态合金。 向电池合金中添加氟键和电负性作为补偿或改变元素，以降低其间隙中的状态密度。 氟键强度允许调节元件添加到合金电池中以调节带隙，而不降低电池合金的电子质量。 当与其一起使用时，氢也充当补偿或改变元素以补充氟。 补偿或更换元件可以在沉积电池或沉积之后添加到合金中。 将调节元件添加到电池合金中将带隙调整到特定电池的选定的最佳波长阈值，以增加光吸收效率以增强器件的光响应，而不会在电池间隙中增加状态，从而降低电池的效率 设备。 调节元件可以以不同的量以不连续的层或基本恒定的量添加到电池合金中。

    Multiple cell photoresponsive amorphous photo voltaic devices including graded band gaps
    3.
    发明授权
    Multiple cell photoresponsive amorphous photo voltaic devices including graded band gaps 失效
    多重细胞光响应无定形光伏器件，包括分级带隙

    公开(公告)号：US4954182A

    公开(公告)日：1990-09-04

    申请号：US301916

    申请日：1989-03-13

    申请人： Stanford R. Ovshinsky ,  David Adler

    发明人： Stanford R. Ovshinsky ,  David Adler

    IPC分类号： C23C14/00 ,  C23C14/06 ,  H01L25/04 ,  H01L29/16 ,  H01L31/0376 ,  H01L31/07 ,  H01L31/20

    CPC分类号： H01L31/076 ,  C23C14/0026 ,  C23C14/06 ,  H01L29/1604 ,  H01L31/03762 ,  H01L31/043 ,  H01L31/07 ,  H01L31/202 ,  H01L2924/0002 ,  Y02E10/548 ,  Y02P70/521

    摘要： The production of improved multiple cell photovoltaic amorphous silicon devices having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the silicon alloy material in one or more cells of the device. The adjusting element or elements are added at least to the active photoresponsive regions of constituent amorphous silicon cells, which regions preferably further include at least one of fluorine and hydrogen. One adjusting element is germanium which narrows the band gap from that of the silicon alloy materials without the adjusting element incorporated thereinto. Other adjusting elements can be used, such as carbon or nitrogen to widen the band gap. The silicon and adjusting elements are concurrently combined and deposited as amorphous silicon alloys by glow discharge decomposition techniques.

    摘要翻译： 通过在器件的一个或多个单元中的硅合金材料中添加一个或多个带隙调节元件，可以制造具有改进的波长阈值特性的改进的多单元光伏非晶硅器件。 至少将调整元素添加到构成非晶硅电池的活性光响应区域，该区域优选还包括氟和氢中的至少一个。 一个调节元件是锗，其与无合金调节元件的硅合金材料的带隙变窄。 可以使用其它调节元件，例如碳或氮来扩大带隙。 硅和调节元件通过辉光放电分解技术同时组合并沉积为非晶硅合金。

    Methods and systems for determining a characteristic of a wafer
    5.
    发明授权
    Methods and systems for determining a characteristic of a wafer 有权
    用于确定晶片特性的方法和系统

    公开(公告)号：US08284394B2

    公开(公告)日：2012-10-09

    申请号：US11673150

    申请日：2007-02-09

    申请人： Michael D. Kirk ,  Christopher F. Bevis ,  David Adler ,  Kris Bhaskar

    发明人： Michael D. Kirk ,  Christopher F. Bevis ,  David Adler ,  Kris Bhaskar

    IPC分类号： G01N21/00

    CPC分类号： G01N21/9501 ,  G01N21/4738 ,  G01N21/55

    摘要： Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.

    摘要翻译： 提供了用于确定晶片特性的方法和系统。 一种方法包括使用检查系统响应来自晶片的光产生输出。 输出包括对应于晶片上的缺陷的第一输出和不对应于缺陷的第二输出。 该方法还包括使用第二输出确定晶片的特性。 一个系统包括检查子系统，该检查子系统配置成照亮晶片并产生响应于来自晶片的光的输出。 输出包括对应于晶片上的缺陷的第一输出和不对应于缺陷的第二输出。 该系统还包括配置成使用第二输出来确定晶片的特性的处理器。

    Index exploitation for spatial data
    8.
    发明申请
    Index exploitation for spatial data 审中-公开
    索引利用空间数据

    公开(公告)号：US20050198008A1

    公开(公告)日：2005-09-08

    申请号：US10792446

    申请日：2004-03-02

    申请人： David Adler

    发明人： David Adler

    IPC分类号： G06F17/30

    CPC分类号： G06F16/2458

    摘要： Provided is a technique for index exploitation. A spatial region query referencing a spatial region is received. The spatial region is divided into intervals. Search ranges are generated for each interval. An index scan is performed for each interval.

    摘要翻译： 提供了一种用于索引开发的技术。 接收引用空间区域的空间区域查询。 空间区域划分为间隔。 每个间隔都会生成搜索范围。 对每个间隔执行索引扫描。

    Secreted salivary zsig63 polypeptide
    10.
    发明申请
    Secreted salivary zsig63 polypeptide 审中-公开
    分泌唾液zsig63多肽

    公开(公告)号：US20050065322A1

    公开(公告)日：2005-03-24

    申请号：US10969164

    申请日：2004-10-20

    申请人： David Adler ,  Paul Sheppard

    发明人： David Adler ,  Paul Sheppard

    IPC分类号： C07K14/47 ,  C12N9/00 ,  C07H21/04

    CPC分类号： C07K14/47

    摘要： The present invention relates to polynucleotide and polypeptide molecules for zsig63, a novel secreted salivary protein. The polypeptides, and polynucleotides encoding them, may exhibit anti-microbial activity and may be used in the study or treatment of microbial infections. The polynucleotides encoding zsig63, are located on chromosome 4, and can be used to identify a region of the genome associated with human disease states. The present invention also includes antibodies to the zsig63 polypeptides.

    摘要翻译： 本发明涉及用于zsig63（一种新型分泌的唾液蛋白）的多核苷酸和多肽分子。 多肽和编码它们的多核苷酸可以表现出抗微生物活性，并且可以用于研究或治疗微生物感染。 编码zsig63的多核苷酸位于染色体4上，可用于鉴定与人类疾病状态相关的基因组区域。 本发明还包括针对zsig63多肽的抗体。