公开(公告)号：US07344996B1

公开(公告)日：2008-03-18

申请号：US11159834

申请日：2005-06-22

申请人： Chi-I Lang ,  Wenxian Zhu ,  Ratsamee Limdulpaiboon ,  Judy H. Huang

发明人： Chi-I Lang ,  Wenxian Zhu ,  Ratsamee Limdulpaiboon ,  Judy H. Huang

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76837 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31608

摘要： Plasma etch processes incorporating helium-based etch chemistries can remove dielectric a semiconductor applications. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate helium as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.

摘要翻译： 掺入氦基蚀刻化学品的等离子体蚀刻工艺可以消除半导体应用的电介质。 特别地，高密度等离子体化学气相蚀刻增强（沉积 - 蚀刻 - 沉积）间隙填充工艺，其结合了氦气作为蚀刻剂的蚀刻化学物质，其可以有效地填充高纵横比间隙，同时减少或消除蚀刻剂化学物质的电介质污染。

公开(公告)号：US07211525B1

公开(公告)日：2007-05-01

申请号：US11082369

申请日：2005-03-16

申请人： Sunil Shanker ,  Sean Cox ,  Chi-I Lang ,  Judy H. Huang ,  Minh Anh Nguyen ,  Ken Vo ,  Wenxian Zhu

发明人： Sunil Shanker ,  Sean Cox ,  Chi-I Lang ,  Judy H. Huang ,  Minh Anh Nguyen ,  Ken Vo ,  Wenxian Zhu

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/0245 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/76224 ,  H01L21/76837

摘要： Methods of filling gaps on semiconductor substrates with dielectric film are described. The methods reduce or eliminate sidewall deposition and top-hat formation. The methods also reduce or eliminate the need for etch steps during dielectric film deposition. The methods include treating a semiconductor substrate with a hydrogen plasma before depositing dielectric film on the substrate. In some embodiments, the hydrogen treatment is used is conjunction with a high rate deposition process.

摘要翻译： 描述了用绝缘膜填充半导体衬底上的间隙的方法。 该方法减少或消除侧壁沉积和顶帽形成。 在电介质膜沉积期间，这些方法还减少或消除了蚀刻步骤的需要。 所述方法包括在沉积介质膜之前用氢等离子体处理半导体衬底。 在一些实施方案中，使用氢处理与高速沉积工艺相结合。

公开(公告)号：US07476621B1

公开(公告)日：2009-01-13

申请号：US11366220

申请日：2006-03-01

申请人： Minh Anh Nguyen ,  Chi-I Lang ,  Wenxian Zhu ,  Judy H. Huang

发明人： Minh Anh Nguyen ,  Chi-I Lang ,  Wenxian Zhu ,  Judy H. Huang

IPC分类号： H01L21/311

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/31612

摘要： Plasma etch processes incorporating H2/Noble gas etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen and one or more Noble gases as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.

摘要翻译： 掺杂H2 / Noble气蚀刻化学物质的等离子体蚀刻工艺。 特别地，高密度等离子体化学气相蚀刻增强（沉积 - 蚀刻 - 沉积）间隙填充工艺结合蚀刻化学，其结合氢气和一种或多种贵重气体作为蚀刻剂，其可以有效地填补高纵横比间隙，同时减少或消除介电污染 通过蚀刻剂化学物种。

公开(公告)号：US08481403B1

公开(公告)日：2013-07-09

申请号：US12984524

申请日：2011-01-04

申请人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/4757

CPC分类号： H01L21/31 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/76224

摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

公开(公告)号：US07727906B1

公开(公告)日：2010-06-01

申请号：US11493679

申请日：2006-07-26

申请人： Sunil Shanker ,  Chi-I Lang ,  Minh Anh Nguyen ,  Judy H. Huang

发明人： Sunil Shanker ,  Chi-I Lang ,  Minh Anh Nguyen ,  Judy H. Huang

IPC分类号： H01L21/31

CPC分类号： C23C16/045 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/32165 ,  H01L21/31604

摘要： This invention relates to electronic device fabrication for making devices such as semiconductor wafers and resolves the detrimental fluorine loading effect on deposition in the reaction chamber of a HDP CVD apparatus used for forming dielectric layers in high aspect ratio, narrow width recessed features with a repeating dep/etch/dep process. The detrimental fluorine loading effect in the chamber on deposition uniformity is reduced and wafers are provided having less deposition thickness variations by employing the method using a passivation treatment and precoating of the chamber before substrates are processed. In a preferred process, after each wafer of a batch is finished, the passivation steps are repeated. In a further preferred process, after all the wafers of a batch are finished, the passivation and precoat procedure is repeated. A preferred passivation gas is a mixture of hydrogen and oxygen.

摘要翻译： 本发明涉及用于制造诸如半导体晶片的器件的电子器件制造，并且解决了用于形成具有高纵横比，窄宽度凹陷特征的电介质层的HDP CVD设备的反应室中沉积的有害氟负载效应，具有重复的dep / etch / dep进程。 通过采用钝化处理的方法和在处理基板之前对涂层进行涂布，在沉积均匀性方面降低了室中对有害的氟负载效应并提供具有较小沉积厚度变化的晶片。 在优选的方法中，在批次的每个晶片完成之后，重复钝化步骤。 在另一优选方法中，在批料的所有晶片完成之后，重复钝化和预涂步骤。 优选的钝化气体是氢和氧的混合物。

公开(公告)号：US08580697B1

公开(公告)日：2013-11-12

申请号：US13031077

申请日：2011-02-18

申请人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/02

CPC分类号： H01L21/76837 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76826

摘要： The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

公开(公告)号：US07482245B1

公开(公告)日：2009-01-27

申请号：US11471958

申请日：2006-06-20

申请人： Jengyi Yu ,  Chi-I Lang ,  Judy H. Huang

发明人： Jengyi Yu ,  Chi-I Lang ,  Judy H. Huang

IPC分类号： H01L21/76

CPC分类号： H01L21/823807 ,  H01L21/823878 ,  H01L29/665 ,  H01L29/78 ,  H01L29/7846

摘要： High density plasma (HDP) techniques form silicon oxide films having sequentially modulated stress profiles. The HDP techniques use low enough temperatures to deposit silicon oxide films in transistor architectures and fabrication processes effective for generating channel strain without adversely impacting transistor integrity. Methods involve partially filling a trench on a substrate with a portion of deposited dielectric using a high density plasma chemical vapor deposition process. The conditions of the process are configured to produce a first stress condition in the first portion of the deposited dielectric. The deposition process condition may then be modified to produce a different stress condition in deposited dielectric. The partially-filled trench may be further filled using the modified deposition process to produce additional dielectric and can be repeated until the trench is filled. Transistor strain can be generated in NMOS or PMOS devices using stress profile modulation in STI gap fill.

摘要翻译： 高密度等离子体（HDP）技术形成具有顺序调制应力分布的氧化硅膜。 HDP技术使用足够低的温度以在晶体管架构和制造工艺中沉积氧化硅膜，其有效地用于产生通道应变而不会不利地影响晶体管的完整性。 方法涉及使用高密度等离子体化学气相沉积工艺在一部分沉积的电介质上部分填充衬底上的沟槽。 该过程的条件被配置为在沉积的电介质的第一部分中产生第一应力状态。 然后可以修改沉积工艺条件以在沉积的电介质中产生不同的应力条件。 可以使用改进的沉积工艺进一步填充部分填充的沟槽，以产生额外的电介质并且可以重复直到填充沟槽。 晶体管应变可以在使用STI间隙填充中的应力分布调制的NMOS或PMOS器件中产生。

公开(公告)号：US07888233B1

公开(公告)日：2011-02-15

申请号：US12411243

申请日：2009-03-25

申请人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/4757

CPC分类号： H01L21/31 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/76224

摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

摘要翻译： 本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。 可流动膜提供一致的，无空隙的间隙填充。 然后将膜转化成固体电介质材料。 以这种方式，用固体电介质材料填充衬底上的间隙。 根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。 在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。 在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。

公开(公告)号：US07582555B1

公开(公告)日：2009-09-01

申请号：US11323812

申请日：2005-12-29

申请人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/4763

CPC分类号： H01L21/76837 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76826

摘要： The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

摘要翻译： 本发明通过提供填充间隙的改进方法来满足这些需要。 在某些实施方案中，所述方法包括将基材置于反应室中并将气相含硅化合物和氧化剂引入所述​​室中。 控制反应器条件使得含硅化合物和氧化剂反应并冷凝到基底上。 化学反应导致形成可流动的膜，在某些情况下，含有Si-OH，Si-H和Si-O键。 可流动膜填充基板上的间隙。 然后将可流动膜转化成氧化硅膜，例如通过等离子体或热退火。 本发明的方法可用于填充高纵横比间隙，包括具有3:1至10:1的纵横比的间隙。

公开(公告)号：US07915139B1

公开(公告)日：2011-03-29

申请号：US12508461

申请日：2009-07-23

申请人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/00

CPC分类号： H01L21/76837 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76826

摘要： The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

摘要翻译： 本发明通过提供填充间隙的改进方法来满足这些需要。 在某些实施方案中，所述方法包括将基材置于反应室中并将气相含硅化合物和氧化剂引入所述​​室中。 控制反应器条件使得含硅化合物和氧化剂反应并冷凝到基底上。 化学反应导致形成可流动的膜，在某些情况下，含有Si-OH，Si-H和Si-O键。 可流动膜填充基板上的间隙。 然后将可流动膜转化成氧化硅膜，例如通过等离子体或热退火。 本发明的方法可用于填充高纵横比间隙，包括具有3:1至10:1的纵横比的间隙。