Increased-contrast film for high-transmittance attenuated phase-shaft masks
    1.
    发明授权
    Increased-contrast film for high-transmittance attenuated phase-shaft masks 失效
    用于高透光率衰减相轴掩模的增强对比度膜

    公开(公告)号:US06858353B2

    公开(公告)日:2005-02-22

    申请号:US10196974

    申请日:2002-07-17

    CPC分类号: G03F1/32 G03F1/84

    摘要: An increased-contrast film for high-transmittance attenuated phase-shift masks (PSM's) is disclosed. A high-transmittance attenuated PSM includes a clear substrate, a shifter film selectively covering the clear substrate, and an increased-contrast film covering the shifter film to aid inspection of the PSM. The increased-contrast film may be removable, and may be photoresist. The increased-contrast film is preferably non-reactive to light used during the inspection of the PSM.

    摘要翻译: 公开了一种用于高透光率衰减相移掩模(PSM's)的增强对比度膜。 高透光衰减PSM包括透明衬底,选择性地覆盖透明衬底的移位膜和覆盖移位膜的增加对比度膜以辅助PSM的检查。 增加的对比度膜可以是可去除的,并且可以是光致抗蚀剂。 增强对比度膜优选对于在PSM的检查期间使用的光是非反应性的。

    Progressive self-learning defect review and classification method
    2.
    发明授权
    Progressive self-learning defect review and classification method 有权
    渐进式自学习缺陷评估与分类方法

    公开(公告)号:US07162071B2

    公开(公告)日:2007-01-09

    申请号:US10326499

    申请日:2002-12-20

    IPC分类号: G06K9/00

    CPC分类号: G06T7/001 G06T2207/30148

    摘要: A progressive self-learning (PSL) method is provided for enhancing wafer or mask defect inspection review and classification by identifying a plurality of wafer or mask defects, and by classifying each of the plurality of defects according to an extent of resemblance of each defect. The method having the steps of: performing image processing on a scanned defect image; aligning the scanned defect image with a just-stored digitized defect image; matching the scanned defect image with a just-stored digitized defect image; and classifying the scanned defect image.

    摘要翻译: 提供了一种渐进式自学习(PSL)方法,用于通过识别多个晶片或掩模缺陷以及通过根据每个缺陷的相似程度对每个缺陷进行分类来增强晶片或掩模缺陷检查审查和分类。 该方法具有以下步骤:对扫描的缺陷图像执行图像处理; 将扫描的缺陷图像与刚刚存储的数字化缺陷图像对准; 将扫描的缺陷图像与刚刚存储的数字化缺陷图像进行匹配; 并对扫描的缺陷图像进行分类。

    System and method for inspecting errors on a wafer
    3.
    发明授权
    System and method for inspecting errors on a wafer 有权
    用于检查晶圆上错误的系统和方法

    公开(公告)号:US07469057B2

    公开(公告)日:2008-12-23

    申请号:US10781107

    申请日:2004-02-18

    IPC分类号: G06K9/00

    摘要: A method and system is disclosed for inspecting defects on a wafer. After acquiring at least one digitized image of at least one portion of a wafer, at least one design database file corresponding to the portion of the wafer is converted into at least one inspection file. After setting one or more error detection thresholds, the digitized image and the inspection file are compared by an inspection tool for detecting defects with regard to the portion of the wafer based on the set error detection thresholds.

    摘要翻译: 公开了一种用于检查晶片上的缺陷的方法和系统。 在获取晶片的至少一部分的至少一个数字化图像之后,将与晶片的该部分对应的至少一个设计数据库文件转换成至少一个检查文件。 在设置一个或多个错误检测阈值之后,通过检测工具来比较数字化图像和检查文件,用于根据所设置的错误检测阈值来检测关于晶片部分的缺陷。

    Method and system for wafer inspection
    9.
    发明授权
    Method and system for wafer inspection 有权
    晶圆检查方法及系统

    公开(公告)号:US08038897B2

    公开(公告)日:2011-10-18

    申请号:US11671772

    申请日:2007-02-06

    IPC分类号: G01R31/00

    摘要: A method for inspecting semiconductor wafers patterned by a photomask includes loading a first wafer and scanning a first image of the first wafer, loading a second wafer and scanning a second image of the second wafer, comparing the first and second images, and classifying a difference detected between the first and second images as a potential defect on the photomask. The potential defect includes a haze defect on the photomask.

    摘要翻译: 用于检查由光掩模图案化的半导体晶片的方法包括加载第一晶片并扫描第一晶片的第一图像,加载第二晶片并扫描第二晶片的第二图像,比较第一和第二图像,以及对差异进行分类 在第一和第二图像之间检测作为光掩模上的潜在缺陷。 潜在的缺陷包括光掩模上的雾度缺陷。

    Method and System For Wafer Inspection
    10.
    发明申请
    Method and System For Wafer Inspection 有权
    晶圆检测方法与系统

    公开(公告)号:US20080187842A1

    公开(公告)日:2008-08-07

    申请号:US11671772

    申请日:2007-02-06

    IPC分类号: G03F7/004 G06K9/68

    摘要: A method for inspecting semiconductor wafers patterned by a photomask includes loading a first wafer and scanning a first image of the first wafer, loading a second wafer and scanning a second image of the second wafer, comparing the first and second images, and classifying a difference detected between the first and second images as a potential defect on the photomask. The potential defect includes a haze defect on the photomask.

    摘要翻译: 用于检查通过光掩模图案化的半导体晶片的方法包括加载第一晶片并扫描第一晶片的第一图像,加载第二晶片并扫描第二晶片的第二图像,比较第一和第二图像,并对差异进行分类 在第一和第二图像之间检测作为光掩模上的潜在缺陷。 潜在的缺陷包括光掩模上的雾度缺陷。