摘要:
An increased-contrast film for high-transmittance attenuated phase-shift masks (PSM's) is disclosed. A high-transmittance attenuated PSM includes a clear substrate, a shifter film selectively covering the clear substrate, and an increased-contrast film covering the shifter film to aid inspection of the PSM. The increased-contrast film may be removable, and may be photoresist. The increased-contrast film is preferably non-reactive to light used during the inspection of the PSM.
摘要:
A progressive self-learning (PSL) method is provided for enhancing wafer or mask defect inspection review and classification by identifying a plurality of wafer or mask defects, and by classifying each of the plurality of defects according to an extent of resemblance of each defect. The method having the steps of: performing image processing on a scanned defect image; aligning the scanned defect image with a just-stored digitized defect image; matching the scanned defect image with a just-stored digitized defect image; and classifying the scanned defect image.
摘要:
A method and system is disclosed for inspecting defects on a wafer. After acquiring at least one digitized image of at least one portion of a wafer, at least one design database file corresponding to the portion of the wafer is converted into at least one inspection file. After setting one or more error detection thresholds, the digitized image and the inspection file are compared by an inspection tool for detecting defects with regard to the portion of the wafer based on the set error detection thresholds.
摘要:
A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.
摘要:
A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.
摘要:
The use of dual-focused ion beams for semiconductor image scanning and mask repair is disclosed. A mask is imaged with either a focused negative ion beam, such as a focused oxygen ion beam, or a focused positive ion beam, such as a focused gallium ion beam. Mask imaging is also referred to as image scanning. Defects in the mask are repaired with the ion beam not used in imaging of the mask. Also disclosed is image scanning being performed with the focused negative ion beam to neutralize potential charge buildup, and mask repair being performed with the focused positive ion beam. An apparatus is disclosed that has a negative ion mechanism supplying negative ions, a positive ion mechanism supplying positive ions, a filter to select the desired ratio of the negative to the positive ions, and an aiming mechanism to focus the ions onto the mask.
摘要:
A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.
摘要:
A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.
摘要:
A method for inspecting semiconductor wafers patterned by a photomask includes loading a first wafer and scanning a first image of the first wafer, loading a second wafer and scanning a second image of the second wafer, comparing the first and second images, and classifying a difference detected between the first and second images as a potential defect on the photomask. The potential defect includes a haze defect on the photomask.
摘要:
A method for inspecting semiconductor wafers patterned by a photomask includes loading a first wafer and scanning a first image of the first wafer, loading a second wafer and scanning a second image of the second wafer, comparing the first and second images, and classifying a difference detected between the first and second images as a potential defect on the photomask. The potential defect includes a haze defect on the photomask.