Via gouged interconnect structure and method of fabricating same
    1.
    发明授权
    Via gouged interconnect structure and method of fabricating same 有权
    通过沟槽互连结构及其制造方法

    公开(公告)号:US07964966B2

    公开(公告)日:2011-06-21

    申请号:US12494564

    申请日:2009-06-30

    摘要: An interconnect structure including a gouging feature at the bottom of a via opening and a method of forming the same are provided. The method of the present invention does not disrupt the coverage of the deposited trench diffusion barrier in a line opening that is located atop the via opening, and/or does not introduce damages caused by creating a gouging feature at the bottom of the via opening by sputtering into the interconnect dielectric material that includes the via and line openings. Such an interconnect structure is achieved by providing a gouging feature in the bottom of the via opening by first forming the line opening within the interconnect dielectric, followed by forming the via opening and then the gouging feature.

    摘要翻译: 提供一种包括通孔开口底部的气刨结构的互连结构及其形成方法。 本发明的方法不会破坏位于通孔开口顶部的线路开口中的沉积的沟槽扩散阻挡层的覆盖和/或不引起由于在通孔开口的底部产生气流特征而造成的损害 溅射到包括通孔和线路开口的互连电介质材料中。 通过首先在互连电介质中形成线路开口,然后形成通孔开口,然后形成沟槽特征,在通孔开口的底部提供气泡特征来实现这种互连结构。

    VIA GOUGED INTERCONNECT STRUCTURE AND METHOD OF FABRICATING SAME
    2.
    发明申请
    VIA GOUGED INTERCONNECT STRUCTURE AND METHOD OF FABRICATING SAME 有权
    通过GOGGED INTERCONNECT结构及其制作方法

    公开(公告)号:US20100327446A1

    公开(公告)日:2010-12-30

    申请号:US12494564

    申请日:2009-06-30

    IPC分类号: H01L23/522 H01L21/768

    摘要: An interconnect structure including a gouging feature at the bottom of a via opening and a method of forming the same are provided. The method of the present invention does not disrupt the coverage of the deposited trench diffusion barrier in a line opening that is located atop the via opening, and/or does not introduce damages caused by creating a gouging feature at the bottom of the via opening by sputtering into the interconnect dielectric material that includes the via and line openings. Such an interconnect structure is achieved by providing a gouging feature in the bottom of the via opening by first forming the line opening within the interconnect dielectric, followed by forming the via opening and then the gouging feature.

    摘要翻译: 提供一种包括通孔开口底部的气刨结构的互连结构及其形成方法。 本发明的方法不会破坏位于通孔开口顶部的线路开口中沉积的沟槽扩散阻挡层的覆盖和/或不引起由通孔开口底部产生气流特征而导致的损伤 溅射到包括通孔和线路开口的互连电介质材料中。 通过首先在互连电介质中形成线路开口,然后形成通孔开口,然后形成沟槽特征,在通孔开口的底部提供气泡特征来实现这种互连结构。

    Tungsten metallization: structure and fabrication of same
    9.
    发明授权
    Tungsten metallization: structure and fabrication of same 失效
    钨金属化:其结构和制造相同

    公开(公告)号:US08564132B2

    公开(公告)日:2013-10-22

    申请号:US13211722

    申请日:2011-08-17

    IPC分类号: H01L23/482

    摘要: A local interconnect structure is provided in which a tungsten region, i.e., tungsten stud, that is formed within a middle-of-the-line (MOL) dielectric material is not damaged and/or contaminated during a multiple interconnect patterning process. This is achieved in the present disclosure by forming a self-aligned tungsten nitride passivation layer within a topmost surface and upper sidewalls portions of the tungsten region that extend above a MOL dielectric material which includes a first interconnect pattern formed therein. During the formation of the self-aligned tungsten nitride passivation layer, a nitrogen enriched dielectric surface also forms within exposed surface of the MOL dielectric material. A second interconnect pattern is then formed adjacent to, but not connect with, the first interconnect pattern. Because of the presence of the self-aligned tungsten nitride passivation layer on the tungsten region, no damaging and/or contamination of the tungsten region can occur.

    摘要翻译: 提供局部互连结构,其中形成在中间线(MOL)电介质材料内的钨区域,即钨柱,在多重互连图案化工艺期间不被损坏和/或污染。 这在本公开内容中通过在顶部表面内形成自对准的氮化钨钝化层,并且在钨区域的上侧壁部分之上延伸到包括形成在其中的第一互连图案的MOL介电材料之上。 在自对准氮化钨钝化层的形成过程中,还会在MOL介电材料的暴露表面内形成富含氮的电介质表面。 然后形成与第一互连图案相邻但不连接的第二布线图案。 由于在钨区域上存在自对准的氮化钨钝化层,不会发生钨区域的破坏和/或污染。

    Noble metal cap for interconnect structures
    10.
    发明授权
    Noble metal cap for interconnect structures 有权
    用于互连结构的贵金属盖

    公开(公告)号:US08497580B2

    公开(公告)日:2013-07-30

    申请号:US13191090

    申请日:2011-07-26

    IPC分类号: H01L23/48 H01L23/52

    摘要: An interconnect structure that includes a dielectric material having a dielectric constant of about 3.0 or less is provided. This low k dielectric material has at least one conductive material having an upper surface embedded therein. The dielectric material also has a surface layer that is made hydrophobic prior to the formation of the noble metal cap. The noble metal cap is located directly on the upper surface of the at least one conductive material. Because of the presence of the hydrophobic surface layer on the dielectric material, the noble metal cap does not substantially extend onto the hydrophobic surface layer of the dielectric material that is adjacent to the at least one conductive material and no metal residues from the noble metal cap deposition form on this hydrophobic dielectric surface.

    摘要翻译: 提供了包括具有约3.0或更小介电常数的介电材料的互连结构。 该低k电介质材料具有至少一个具有嵌入其中的上表面的导电材料。 电介质材料还具有在形成贵金属盖之前被制成疏水性的表面层。 贵金属盖直接位于至少一个导电材料的上表面上。 由于在电介质材料上存在疏水表面层,贵金属盖基本上不会延伸到与至少一种导电材料相邻的电介质材料的疏水表面层上,并且没有贵金属帽的金属残留物 沉积形式在该疏水电介质表面上。