摘要:
An interconnect structure including a gouging feature at the bottom of a via opening and a method of forming the same are provided. The method of the present invention does not disrupt the coverage of the deposited trench diffusion barrier in a line opening that is located atop the via opening, and/or does not introduce damages caused by creating a gouging feature at the bottom of the via opening by sputtering into the interconnect dielectric material that includes the via and line openings. Such an interconnect structure is achieved by providing a gouging feature in the bottom of the via opening by first forming the line opening within the interconnect dielectric, followed by forming the via opening and then the gouging feature.
摘要:
An interconnect structure including a gouging feature at the bottom of a via opening and a method of forming the same are provided. The method of the present invention does not disrupt the coverage of the deposited trench diffusion barrier in a line opening that is located atop the via opening, and/or does not introduce damages caused by creating a gouging feature at the bottom of the via opening by sputtering into the interconnect dielectric material that includes the via and line openings. Such an interconnect structure is achieved by providing a gouging feature in the bottom of the via opening by first forming the line opening within the interconnect dielectric, followed by forming the via opening and then the gouging feature.
摘要:
A method of making an interconnect that includes providing an interconnect structure in a dielectric material, recessing the dielectric material such that a portion of the interconnect structure extends above an upper surface of the dielectric; and depositing an encasing cap over the extended portion of the interconnect structure.
摘要:
A method of making an interconnect structure: which includes providing an interconnect structure in a dielectric material, recessing the dielectric material such that a portion of the interconnect structure extends above an upper surface of the dielectric material; and depositing an encasing cap over the extended portion of the interconnect structure.
摘要:
A method of making an interconnect comprising: providing an interconnect structure in a dielectric material, recessing the dielectric material such that a portion of the interconnect structure extends above an upper surface of the dielectric; and depositing an encasing cap over the extended portion of the interconnect structure.
摘要:
A method for capping lines includes forming a metal film layer on a copper line by a selective deposition process, the copper line disposed in a dielectric substrate, wherein the depositing also results in the deposition of stray metal material on the surface of the dielectric substrate, and etching with an isotropic etching process to remove a portion of the metal film layer and the stray metal material on the surface of the dielectric substrate, wherein the metal film layer is deposited at an initial thickness sufficient to leave a metal film layer cap remaining on the copper line following the removal of the stray metal material.
摘要:
A method of making an interconnect which includes providing an interconnect structure in a dielectric material, recessing the dielectric material such that a portion of the interconnect structure extends above an upper surface of the dielectric and depositing an encasing cap over the extended portion of the interconnect structure.
摘要:
An interconnect structure including an alloy liner positioned directly between a diffusion barrier and a Cu alloy seed layer as well as methods for forming such an interconnect structure are provided. The alloy liner of the present invention is formed by thermally reacting a previously deposited diffusion barrier metal alloy layer with an overlying Cu alloy seed layer. During the thermal reaction, the metal alloys from the both the diffusion barrier and the Cu alloys seed layer react forming a metal alloy reaction product between the diffusion barrier and the Cu seed layer.
摘要:
A local interconnect structure is provided in which a tungsten region, i.e., tungsten stud, that is formed within a middle-of-the-line (MOL) dielectric material is not damaged and/or contaminated during a multiple interconnect patterning process. This is achieved in the present disclosure by forming a self-aligned tungsten nitride passivation layer within a topmost surface and upper sidewalls portions of the tungsten region that extend above a MOL dielectric material which includes a first interconnect pattern formed therein. During the formation of the self-aligned tungsten nitride passivation layer, a nitrogen enriched dielectric surface also forms within exposed surface of the MOL dielectric material. A second interconnect pattern is then formed adjacent to, but not connect with, the first interconnect pattern. Because of the presence of the self-aligned tungsten nitride passivation layer on the tungsten region, no damaging and/or contamination of the tungsten region can occur.
摘要:
An interconnect structure that includes a dielectric material having a dielectric constant of about 3.0 or less is provided. This low k dielectric material has at least one conductive material having an upper surface embedded therein. The dielectric material also has a surface layer that is made hydrophobic prior to the formation of the noble metal cap. The noble metal cap is located directly on the upper surface of the at least one conductive material. Because of the presence of the hydrophobic surface layer on the dielectric material, the noble metal cap does not substantially extend onto the hydrophobic surface layer of the dielectric material that is adjacent to the at least one conductive material and no metal residues from the noble metal cap deposition form on this hydrophobic dielectric surface.