公开(公告)号：US06586322B1

公开(公告)日：2003-07-01

申请号：US10032341

申请日：2001-12-21

申请人： Chih-Cheng Chiu ,  Sheng-Liang Pan ,  Kuo-Liang Lu

发明人： Chih-Cheng Chiu ,  Sheng-Liang Pan ,  Kuo-Liang Lu

IPC分类号： H01L2144

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11849 ,  H01L2224/11902 ,  H01L2224/11914 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599

摘要： A method of forming a bump on a substrate such as a semiconductor wafer or flip chip. The method includes the step of providing a semiconductor device having a contact pad and an upper passivation layer and an opening formed in the upper passivation layer exposing a portion of the contact pad. An under bump metallurgy is deposited over the upper passivation layer and the contact pad. A first photoresist layer is deposited in a liquid state so that the first photoresist layer covers the under bump metallurgy. A second photoresist layer is deposited and the second photoresist layer is a dry film photoresist. The unexposed portions of the first photoresist layer are removed. The remaining portions of the first photoresist layers are removed. The electrically conductive material is reflown to provide a bump on the semiconductor device.

摘要翻译： 在半导体晶片或倒装芯片等基板上形成凸点的方法。 该方法包括提供具有接触焊盘和上钝化层的半导体器件的步骤，以及形成在上钝化层中的开口，露出接触焊盘的一部分。 在上钝化层和接触焊盘上沉积凸块下冶金。 以液态沉积第一光致抗蚀剂层，使得第一光致抗蚀剂层覆盖凸块下金属。 沉积第二光致抗蚀剂层，第二光致抗蚀剂层是干膜光致抗蚀剂。 去除第一光致抗蚀剂层的未曝光部分。 去除第一光致抗蚀剂层的剩余部分。 导电材料被重熔以在半导体器件上提供凸块。

公开(公告)号：US20050250021A1

公开(公告)日：2005-11-10

申请号：US11044517

申请日：2005-01-27

申请人： Kuei Chen ,  Chin-Hsiang Lin ,  Chih-Cheng Chiu

发明人： Kuei Chen ,  Chin-Hsiang Lin ,  Chih-Cheng Chiu

IPC分类号： G03C5/00 ,  G03F1/14 ,  G03F9/00 ,  H01L21/469

CPC分类号： G03F1/36 ,  G03F1/70

摘要： A photomask set includes at least two masks that combine to form a device pattern in a semiconductor device. Orthogonal corners may be produced in a semiconductor device pattern to include one edge defined by a first mask and an orthogonal edge defined by a second mask. The mask set may include a first mask with compensation features and a second mask with void areas overlaying the compensation features when the first and second masks are aligned with one another, such that the compensation features are removed when patterns are successfully formed from the first and second masks. The compensation features alleviate proximity effects during the formation of device features.

摘要翻译： 光掩模组包括组合以在半导体器件中形成器件图案的至少两个掩模。 可以在半导体器件图案中产生正交角，以包括由第一掩模限定的一个边缘和由第二掩模限定的正交边缘。 掩模组可以包括具有补偿特征的第一掩模和当第一和第二掩模彼此对准时覆盖补偿特征的空隙区域的第二掩模，使得当从第一和第二掩模成功形成图案时，补偿特征被去除 第二个面具 补偿功能可以减轻设备特征形成过程中的邻近效应。

公开(公告)号：US07811720B2

公开(公告)日：2010-10-12

申请号：US11044517

申请日：2005-01-27

申请人： Kuei Shun Chen ,  Chin-Hsiang Lin ,  Chih-Cheng Chiu

发明人： Kuei Shun Chen ,  Chin-Hsiang Lin ,  Chih-Cheng Chiu

IPC分类号： G03F1/00

CPC分类号： G03F1/36 ,  G03F1/70

摘要： A photomask set includes at least two masks that combine to form a device pattern in a semiconductor device. Orthogonal corners may be produced in a semiconductor device pattern to include one edge defined by a first mask and an orthogonal edge defined by a second mask. The mask set may include a first mask with compensation features and a second mask with void areas overlaying the compensation features when the first and second masks are aligned with one another, such that the compensation features are removed when patterns are successfully formed from the first and second masks. The compensation features alleviate proximity effects during the formation of device features.

摘要翻译： 光掩模组包括组合以在半导体器件中形成器件图案的至少两个掩模。 可以在半导体器件图案中产生正交角，以包括由第一掩模限定的一个边缘和由第二掩模限定的正交边缘。 掩模组可以包括具有补偿特征的第一掩模和当第一和第二掩模彼此对准时覆盖补偿特征的空隙区域的第二掩模，使得当从第一和第二掩模成功形成图案时，补偿特征被去除 第二个面具 补偿功能可以减轻设备特征形成过程中的邻近效应。

公开(公告)号：US08518628B2

公开(公告)日：2013-08-27

申请号：US11534289

申请日：2006-09-22

申请人： Ching-Yu Chang ,  Chih-Cheng Chiu

发明人： Ching-Yu Chang ,  Chih-Cheng Chiu

IPC分类号： G03F7/038 ,  G03F7/039

CPC分类号： G03F7/2041 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/168

摘要： A material is provided for use in an immersion lithographic process of a semiconductor substrate. The material includes a photo-sensitive polymer configured to turn soluble to a base solution in response to reaction with an acid and at least one of either a base soluble polymer or an acid labile polymer. The base soluble polymer is configured to turn soluble to water in response to reaction with a developer solution. The acid labile polymer is configured to turn soluble to water after releasing a leaving group in reaction to the acid.

摘要翻译： 提供了用于半导体衬底的浸没式光刻工艺中的材料。 该材料包括光敏聚合物，其被配置为响应于与酸和碱溶性聚合物或酸不稳定聚合物中的至少一种而发生反应而转化为碱溶液。 基础可溶性聚合物被配置为响应于与显影剂溶液的反应而使水溶解。 酸不稳定聚合物被配置成在释放离去基团以反应酸之后将其溶于水。

公开(公告)号：US07462248B2

公开(公告)日：2008-12-09

申请号：US11671570

申请日：2007-02-06

申请人： Chih-Cheng Chiu ,  Ching-Yu Chang

发明人： Chih-Cheng Chiu ,  Ching-Yu Chang

IPC分类号： B08B3/04

CPC分类号： G03F1/82 ,  Y10S134/902

摘要： A method for cleaning a photomask includes cleaning the photomask with a chemical cleaner, introducing a solution to the photomask, the solution is configured to react with residuals generated from the chemical cleaner to form insoluble precipitates, and rinsing the photomask with a fluid to remove the insoluble precipitates from the photomask.

摘要翻译： 用于清洁光掩模的方法包括用化学清洁剂清洁光掩模，将溶液引入到光掩模中，溶液被配置为与由化学清洁剂产生的残余物反应以形成不溶性沉淀物，并用流体冲洗光掩模以除去 来自光掩模的不溶性沉淀物。

公开(公告)号：US20050250330A1

公开(公告)日：2005-11-10

申请号：US10842065

申请日：2004-05-10

申请人： Kuei Chen ,  Chin-Hsiang Lin ,  Chih-Cheng Chiu

发明人： Kuei Chen ,  Chin-Hsiang Lin ,  Chih-Cheng Chiu

IPC分类号： G03C5/00 ,  G03F1/14 ,  G03F9/00 ,  H01L21/469

CPC分类号： G03F1/36 ,  G03F1/70 ,  Y10S430/151

摘要： A photolithography and etch process sequence includes a photomask having a pattern with compensation features that alleviate patterning variations due to the proximity effect and depth of focus concerns during photolithography. The compensation features may be disposed near isolated or outermost lines of a device pattern. A photoresist pattern is formed to include the compensation features and the pattern etched to form a corresponding etched pattern including the compensation features. After etching, a protection material is formed over the layer and a trim mask is used to form a further photoresist pattern over the protection material. A subsequent etching pattern etches the protection material and removes the compensation features and results in the device lines being formed unaffected by proximity effects. Flare dummies may additionally be added to the mask pattern to increase pattern density and assist in endpoint detection. Flare dummies, like the compensation features, are subsequently removed by a photolithography and etching process sequence.

摘要翻译： 光刻和蚀刻工艺顺序包括具有补偿特征的图案的光掩模，其减轻由于光刻期间的邻近效应和焦深问题而引起的图案变化。 补偿特征可以设置在装置图案的隔离或最外面的线附近。 形成光致抗蚀剂图案以包括补偿特征和蚀刻的图案以形成包括补偿特征的对应蚀刻图案。 在蚀刻之后，在层上形成保护材料，并且使用修剪掩模在保护材料上形成另外的光致抗蚀剂图案。 随后的蚀刻图案蚀刻保护材料并去除补偿特征并导致形成的器件线不受邻近效应的影响。 可以将Flare虚拟样本添加到掩模图案中以增加图案密度并有助于端点检测。 随后通过光刻和蚀刻工艺顺序去除Flare虚拟物，如补偿特征。

公开(公告)号：US08158306B2

公开(公告)日：2012-04-17

申请号：US12886391

申请日：2010-09-20

申请人： Kuei Shun Chen ,  Chin-Hsiang Lin ,  Chih-Cheng Chiu

发明人： Kuei Shun Chen ,  Chin-Hsiang Lin ,  Chih-Cheng Chiu

IPC分类号： G03F1/00

CPC分类号： G03F1/36 ,  G03F1/70

摘要： A photomask set includes at least two masks that combine to form a device pattern in a semiconductor device. Orthogonal corners may be produced in a semiconductor device pattern to include one edge defined by a first mask and an orthogonal edge defined by a second mask. The mask set may include a first mask with compensation features and a second mask with void areas overlaying the compensation features when the first and second masks are aligned with one another, such that the compensation features are removed when patterns are successfully formed from the first and second masks. The compensation features alleviate proximity effects during the formation of device features.

摘要翻译： 光掩模组包括组合以在半导体器件中形成器件图案的至少两个掩模。 可以在半导体器件图案中产生正交角，以包括由第一掩模限定的一个边缘和由第二掩模限定的正交边缘。 掩模组可以包括具有补偿特征的第一掩模和当第一和第二掩模彼此对准时覆盖补偿特征的空隙区域的第二掩模，使得当从第一和第二掩模成功形成图案时，补偿特征被去除 第二个面具 补偿功能可以减轻设备特征形成过程中的邻近效应。

公开(公告)号：US20110006401A1

公开(公告)日：2011-01-13

申请号：US12886391

申请日：2010-09-20

申请人： Kuei Shun Chen ,  Chin-Hsiang Lin ,  Chih-Cheng Chiu

发明人： Kuei Shun Chen ,  Chin-Hsiang Lin ,  Chih-Cheng Chiu

IPC分类号： H01L29/02 ,  G03F7/20

CPC分类号： G03F1/36 ,  G03F1/70

摘要： A photomask set includes at least two masks that combine to form a device pattern in a semiconductor device. Orthogonal corners may be produced in a semiconductor device pattern to include one edge defined by a first mask and an orthogonal edge defined by a second mask. The mask set may include a first mask with compensation features and a second mask with void areas overlaying the compensation features when the first and second masks are aligned with one another, such that the compensation features are removed when patterns are successfully formed from the first and second masks. The compensation features alleviate proximity effects during the formation of device features.

摘要翻译： 光掩模组包括组合以在半导体器件中形成器件图案的至少两个掩模。 可以在半导体器件图案中产生正交角，以包括由第一掩模限定的一个边缘和由第二掩模限定的正交边缘。 掩模组可以包括具有补偿特征的第一掩模和当第一和第二掩模彼此对准时覆盖补偿特征的空隙区域的第二掩模，使得当从第一和第二掩模成功形成图案时，补偿特征被去除 第二个面具 补偿功能可以减轻设备特征形成过程中的邻近效应。

公开(公告)号：US20080185021A1

公开(公告)日：2008-08-07

申请号：US11671570

申请日：2007-02-06

申请人： Chih-Cheng Chiu ,  Ching-Yu Chang

发明人： Chih-Cheng Chiu ,  Ching-Yu Chang

IPC分类号： B08B3/04

CPC分类号： G03F1/82 ,  Y10S134/902

摘要： A method for cleaning a photomask includes cleaning the photomask with a chemical cleaner, introducing a solution to the photomask, the solution is configured to react with residuals generated from the chemical cleaner to form insoluble precipitates, and rinsing the photomask with a fluid to remove the insoluble precipitates from the photomask.

摘要翻译： 用于清洁光掩模的方法包括用化学清洁剂清洁光掩模，将溶液引入到光掩模中，溶液被配置为与由化学清洁剂产生的残余物反应以形成不溶性沉淀物，并用流体冲洗光掩模以除去 来自光掩模的不溶性沉淀物。

公开(公告)号：US07202148B2

公开(公告)日：2007-04-10

申请号：US10842065

申请日：2004-05-10

申请人： Kuei Shun Chen ,  Chin-Hsiang Lin ,  Chih-Cheng Chiu

发明人： Kuei Shun Chen ,  Chin-Hsiang Lin ,  Chih-Cheng Chiu

IPC分类号： H01L21/308

CPC分类号： G03F1/36 ,  G03F1/70 ,  Y10S430/151

摘要： A photolithography and etch process sequence includes a photomask having a pattern with compensation features that alleviate patterning variations due to the proximity effect and depth of focus concerns during photolithography. The compensation features may be disposed near isolated or outermost lines of a device pattern. A photoresist pattern is formed to include the compensation features and the pattern etched to form a corresponding etched pattern including the compensation features. After etching, a protection material is formed over the layer and a trim mask is used to form a further photoresist pattern over the protection material. A subsequent etching pattern etches the protection material and removes the compensation features and results in the device lines being formed unaffected by proximity effects. Flare dummies may additionally be added to the mask pattern to increase pattern density and assist in endpoint detection. Flare dummies, like the compensation features, are subsequently removed by a photolithography and etching process sequence.

摘要翻译： 光刻和蚀刻工艺顺序包括具有补偿特征的图案的光掩模，其减轻由于光刻期间的邻近效应和焦深问题而引起的图案变化。 补偿特征可以设置在装置图案的隔离或最外面的线附近。 形成光致抗蚀剂图案以包括补偿特征和蚀刻的图案以形成包括补偿特征的对应蚀刻图案。 在蚀刻之后，在层上形成保护材料，并且使用修剪掩模在保护材料上形成另外的光致抗蚀剂图案。 随后的蚀刻图案蚀刻保护材料并去除补偿特征并导致形成的器件线不受邻近效应的影响。 可以将Flare虚拟样本添加到掩模图案中以增加图案密度并有助于端点检测。 随后通过光刻和蚀刻工艺顺序去除Flare虚拟物，如补偿特征。