Mixing barbituric acid-modified BMI with MEK solution of epoxy resin and elastomer
    1.
    发明授权
    Mixing barbituric acid-modified BMI with MEK solution of epoxy resin and elastomer 有权
    将巴比妥酸改性BMI与环氧树脂和弹性体的MEK溶液混合

    公开(公告)号:US06359039B1

    公开(公告)日:2002-03-19

    申请号:US09628061

    申请日:2000-07-25

    CPC classification number: C09J163/00 C08G59/4042 C08L79/08 C08L2666/08

    Abstract: An epoxy based adhesive composition contains: (i) a barbituric acid-modified bismaleimide; (ii) an epoxy resin selected from the group consisting of tetraglycidylmethylenedianiline, diglycidyl ortho-phthalate, diglycidyl ether of bisphenol A, polyglycidyl ether of novolac, and epoxy cresol novolac; (iii) an elastomer such as a carboxylated acrylontrile rubber containing between 19 and 41 wt % of acrylontrile; (v) a hardening agent and (vi) a catalyst.

    Abstract translation: 环氧基粘合剂组合物包含:(i)巴比妥酸改性双马来酰亚胺; (ii)选自四缩水甘油亚甲基二苯胺,邻苯二甲酸二缩水甘油酯,双酚A的二缩水甘油醚,酚醛清漆的聚缩水甘油醚和环氧甲酚酚醛清漆的环氧树脂; (iii)弹性体,例如含有19至41重量%的丙烯腈的羧化丙烯腈橡胶; (v)硬化剂和(vi)催化剂。

    Encapulation process for mono-and polycrystalline silicon solar cell
modules
    2.
    发明授权
    Encapulation process for mono-and polycrystalline silicon solar cell modules 有权
    单晶硅和多晶硅太阳能电池模块的封装工艺

    公开(公告)号:US6166322A

    公开(公告)日:2000-12-26

    申请号:US292873

    申请日:1999-04-16

    CPC classification number: H01L31/0512 H01L31/048 Y02E10/50

    Abstract: A crystalline silicon based solar cell module comprising: (a) a crystalline silicon based solar cell array formed by interconnecting a plurality of crystalline silicon based solar cells with an interconnect; (b) a hot melt adhesive applied above and below the interconnect to reduce mechanical and thermal stress between the interconnect and the crystalline silicon based solar cells. The hot melt adhesive can be an ethylene-polymer along with a variety of additives such as oxidation inhibitor, UV stabilizer, and UV absorber.

    Abstract translation: 一种晶体硅基太阳能电池模块,包括:(a)通过将多个晶体硅基太阳能电池与互连互连形成的晶体硅基太阳能电池阵列; (b)在互连上方和下方施加的热熔粘合剂,以减少互连和晶体硅基太阳能电池之间的机械和热应力。 热熔粘合剂可以是乙烯聚合物以及各种添加剂,例如氧化抑制剂,UV稳定剂和UV吸收剂。

    Ink jet printing medium
    3.
    发明授权
    Ink jet printing medium 失效
    喷墨打印介质

    公开(公告)号:US5928789A

    公开(公告)日:1999-07-27

    申请号:US998685

    申请日:1997-12-29

    Abstract: An ink jet printing medium is disclosed. It contains (a) a substrate; (b) an ink absorption layer; and (c) a reinforcement layer sandwiched between said substrate and said ink absorption layer. The reinforcement layer, which is provided at a thickness about 5% to 100% of a thickness of said ink absorption layer, comprises: (a) a carboxylated acrylonitrile rubber at about 7 to 25 wt %; (b) an epoxy resin containing at least two epoxy groups, about 45 to 70 wt %; (c) a hardener containing at least two functional groups, provided at an equivalent ratio of between about 0.9 and 1.1 relative to said epoxy resin; and (d) a catalyst. The inkjet printing medium exhibits excellent adhesion between the ink absorption medium and the substrate, and improved water resistance without affecting printing quality.

    Abstract translation: 公开了一种喷墨打印介质。 它包含(a)底物; (b)吸墨层; 和(c)夹在所述基材和所述墨吸收层之间的加强层。 以所述油墨吸收层的厚度的约5%至100%的厚度提供的加强层包括:(a)约7至25重量%的羧化丙烯腈橡胶; (b)含有至少两个环氧基的环氧树脂,约45至70重量%; (c)含有至少两个官能团的硬化剂,其相对于所述环氧树脂以等于或大于0.9和1.1的当量比提供; 和(d)催化剂。 喷墨打印介质在油墨吸收介质和基材之间表现出优异的粘附性,并且改善了耐水性而不影响印刷质量。

    Pixel structure, 3D image/multiple view liquid crystal display device and method of manufacturing the same
    4.
    发明授权
    Pixel structure, 3D image/multiple view liquid crystal display device and method of manufacturing the same 有权
    像素结构,3D图像/多视图液晶显示装置及其制造方法

    公开(公告)号:US08179503B2

    公开(公告)日:2012-05-15

    申请号:US12421752

    申请日:2009-04-10

    Inventor: Chih-Chiang Chen

    Abstract: A pixel structure, a 3D image/multiple view liquid crystal display device and a method of manufacturing the same are provided. The pixel structure comprises a first substrate, a second substrate being parallel with the first substrate, a liquid crystal layer disposed between the first substrate and the second substrate, a reflecting structure, and a light angle control structure. The reflecting structure is disposed on the first substrate, and the light angle control structure is disposed on the second substrate. The light angle control structure is configured to reflect a light entering from the first substrate to the reflecting structure, and the reflecting structure is configured to reflect the light again such that the light exits from the pixel structure in a predetermined direction.

    Abstract translation: 提供像素结构,3D图像/多视图液晶显示装置及其制造方法。 像素结构包括第一衬底,与第一衬底平行的第二衬底,设置在第一衬底和第二衬底之间的液晶层,反射结构和光角度控制结构。 反射结构设置在第一基板上,光角控制结构设置在第二基板上。 光角控制结构被配置为将从第一基板进入的光反射到反射结构,并且反射结构被配置为再次反射光,使得光沿着预定方向从像素结构离开。

    KEY-INTEGRATED LCD PANEL AND METHOD OF INTEGRATING KEYS INTO LCD PANEL
    5.
    发明申请
    KEY-INTEGRATED LCD PANEL AND METHOD OF INTEGRATING KEYS INTO LCD PANEL 审中-公开
    主要集成液晶面板及将其集成到LCD面板中的方法

    公开(公告)号:US20100201648A1

    公开(公告)日:2010-08-12

    申请号:US12484763

    申请日:2009-06-15

    Inventor: Chih-Chiang Chen

    CPC classification number: G06F3/0412

    Abstract: A keys-integrated LCD panel includes a first conductor arranged on one face of a transistor substrate and a second conductor arranged on one face of a color filter substrate facing toward the transistor substrate. The second conductor meets the first conductor without contacting with the first conductor, and a key district is formed at the position at where the second conductor meets the first conductor. When the key district is touched, the first and the second conductor electrically contact with each other and the signal level at one of the first and the second conductor will change. A controller is provided for detecting any change in the signal level at one of the first and the second conductor. When a change in the signal level is detected, the controller outputs a key signal corresponding to the touched key district.

    Abstract translation: 键集成LCD面板包括布置在晶体管基板的一个面上的第一导体和布置在面向晶体管基板的滤色器基板的一个面上的第二导体。 第二导体在不与第一导体接触的情况下与第一导体相交,并且在第二导体与第一导体相交的位置处形成键区。 当键区被触摸时,第一和第二导体彼此电接触,并且第一和第二导体之一处的信号电平将改变。 提供控制器用于检测第一和第二导体中的一个处的信号电平的任何变化。 当检测到信号电平的变化时,控制器输出与触摸的键区对应的键信号。

    Method of forming a top gate thin film transistor
    7.
    发明授权
    Method of forming a top gate thin film transistor 有权
    形成顶栅极薄膜晶体管的方法

    公开(公告)号:US07087363B2

    公开(公告)日:2006-08-08

    申请号:US10650977

    申请日:2003-08-29

    CPC classification number: H01L29/66757 H01L29/78621

    Abstract: A method of forming a top gate thin film transistor (TFT). By performing photolithography using a first reticle, a photoresist layer having a thick photoresist layer portion and a thin photoresist layer portion is formed on a silicon layer in an active area. Thus, a channel layer and source/drain regions in a silicon island are defined by the same patterning process. In addition, a gate and an LDD region in the silicon island are defined by photolithography using a second reticle and a backside exposure process. Accordingly, the top gate TFT fabrication process of the present invention requires only two reticles, and thereby reduces costs.

    Abstract translation: 一种形成顶栅极薄膜晶体管(TFT)的方法。 通过使用第一掩模版进行光刻,在活性区域的硅层上形成具有厚的光致抗蚀剂层部分和光致抗蚀剂层部分的光致抗蚀剂层。 因此,通过相同的图案化工艺限定硅岛中的沟道层和源/漏区。 此外,硅岛中的栅极和LDD区域通过使用第二掩模版和背面曝光工艺的光刻来定义。 因此,本发明的顶栅TFT制造方法仅需要两个掩模版,从而降低成本。

    Resizable wireless pointing device with a storable receiver
    8.
    发明申请
    Resizable wireless pointing device with a storable receiver 有权
    具有可存储接收器的可调整大小的无线指示设备

    公开(公告)号:US20060158430A1

    公开(公告)日:2006-07-20

    申请号:US11196555

    申请日:2005-08-02

    CPC classification number: G06F3/03543 G06F2203/0333

    Abstract: The present invention relates to a resizable wireless pointing device with a storable receiver. The body housing comprises at least one inner compartment which is located next to the back of a wheel and used for storage of said wireless receiver. A sliding cover, located on the top of said body housing, which slides back and forth along the longitude axis of the housing and subsequently alters the size of the wireless pointing device. A shutter, which rolls up following the sliding of the cover, closes seamlessly the gap area between the body housing and the cover, and integrates into the surface of the wireless pointing device.

    Abstract translation: 本发明涉及一种具有可存储接收机的可调节大小的无线指示设备。 主体外壳包括至少一个位于车轮后部旁边并用于存储所述无线接收器的内部隔室。 位于所述主体外壳顶部的滑盖,其沿壳体的经度轴线前后滑动,随后改变无线定位装置的尺寸。 在盖子滑动之后卷起的快门可无缝地封闭主体外壳和盖子之间的间隙区域,并且集成到无线指点设备的表面中。

    Method of forming a color filter on a substrate having pixel driving elements
    9.
    发明授权
    Method of forming a color filter on a substrate having pixel driving elements 有权
    在具有像素驱动元件的基板上形成滤色器的方法

    公开(公告)号:US06692983B1

    公开(公告)日:2004-02-17

    申请号:US10400032

    申请日:2003-03-26

    CPC classification number: G02F1/136227 G02F2001/136222 H01L27/14685

    Abstract: A method of forming a color filter on a substrate having pixel driving elements. A substrate having a plurality of light-transmitting areas and active areas is provided. A pixel driving element is formed on the substrate in each active area, wherein an insulation layer is formed between each pixel driving element. A planarization layer is formed on the pixel driving elements and the insulation layer. Part of the planarization layer is removed to form contact holes and openings, wherein the contact holes expose part of the pixel driving elements, and the openings expose the insulation layer in the light-transmitting areas. Color pigment is filled into the openings to form a color filter on the substrate having the pixel driving elements. Transparent pixel electrodes are formed in the contact holes to electrically connect the pixel driving elements, wherein the transparent electrodes extend onto part of the color filter.

    Abstract translation: 一种在具有像素驱动元件的基板上形成滤色器的方法。 提供具有多个透光区域和有源区域的基板。 在每个有源区域中的衬底上形成像素驱动元件,其中在每个像素驱动元件之间形成绝缘层。 在像素驱动元件和绝缘层上形成平坦化层。 去除平坦化层的一部分以形成接触孔和开口,其中接触孔暴露部分像素驱动元件,并且开口暴露透光区域中的绝缘层。 将彩色颜料填充到开口中,以在具有像素驱动元件的基板上形成滤色器。 透明像素电极形成在接触孔中以电连接像素驱动元件,其中透明电极延伸到滤色器的一部分上。

    Polysilicon thin film transistor with a self-aligned LDD structure
    10.
    发明授权
    Polysilicon thin film transistor with a self-aligned LDD structure 有权
    具有自对准LDD结构的多晶硅薄膜晶体管

    公开(公告)号:US06475843B2

    公开(公告)日:2002-11-05

    申请号:US10084816

    申请日:2002-02-25

    CPC classification number: H01L29/66757 H01L29/78621

    Abstract: A polysilicon thin film transistor (poly-Si TFT) with a self-aligned lightly doped drain (LDD) structure has a transparent insulating substrate; a buffering layer formed on the transparent insulating substrate; a polysilicon layer formed on the buffering layer and having a channel region, an LDD structure surrounding the channel region, and a source/drain region surrounding the LDD structure; a gate insulating layer formed on the polysilicon layer; a gate layer formed on the gate insulating layer and positioned over the channel region; an insulating spacer formed on the sidewall of the gate layer and positioned over the LDD structure; and a subgate gate layer formed on the insulating spacer.

    Abstract translation: 具有自对准轻掺杂漏极(LDD)结构的多晶硅薄膜晶体管(poly-Si TFT)具有透明绝缘基板; 形成在所述透明绝缘基板上的缓冲层; 形成在所述缓冲层上并具有沟道区,围绕所述沟道区的LDD结构以及围绕所述LDD结构的源极/漏极区的多晶硅层; 形成在所述多晶硅层上的栅极绝缘层; 栅极层,形成在所述栅极绝缘层上并定位在所述沟道区上; 形成在栅极层的侧壁上并位于LDD结构上的绝缘间隔物; 以及形成在绝缘间隔物上的子栅极栅层。

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