公开(公告)号：US08696161B2

公开(公告)日：2014-04-15

申请号：US13314352

申请日：2011-12-08

申请人： Ching-Jen Pan ,  Cheng-Wei Chan ,  Ming-Hung Chen

发明人： Ching-Jen Pan ,  Cheng-Wei Chan ,  Ming-Hung Chen

IPC分类号： F21V21/00 ,  F26B19/00

CPC分类号： F26B19/00 ,  A45D29/00 ,  A45D2200/205

摘要： A high-luminance ultraviolet (UV) light-emitting diode (LED) nail lamp structure and an LED light source module thereof are provided. The LED nail lamp structure includes a housing and an LED light source module. The LED light source module is provided in the housing and has a plurality of UV LEDs, wherein each UV LED has an LED chip disposed in a concave lamp cup. The LED nail lamp structure features high luminance and good lighting effect.

摘要翻译： 提供了高亮度紫外（UV）发光二极管（LED）指甲灯结构及其LED光源模块。 LED指甲灯结构包括壳体和LED光源模块。 LED光源模块设置在壳体中并具有多个UV LED，其中每个UV LED具有设置在凹灯杯中的LED芯片。 LED指甲灯结构具有高亮度和良好的照明效果。

公开(公告)号：US20140091330A1

公开(公告)日：2014-04-03

申请号：US13633671

申请日：2012-10-02

申请人： Ming-Hung CHEN ,  Ching-Jen Pan ,  Shih-Chang Shei

发明人： Ming-Hung CHEN ,  Ching-Jen Pan ,  Shih-Chang Shei

IPC分类号： H01L33/42

CPC分类号： H01L27/156 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention discloses a LED package structure with transparent electrodes. The electrode layers the semiconductor layers inside the LED chip and the protection layer are all transparent to visible and invisible lights. With the adoption of the present invention, electrodes on the LED package no longer block any part of the light emission from inside the LED.

摘要翻译： 本发明公开了一种具有透明电极的LED封装结构。 LED芯片内的半导体层的电极层和保护层对可见光和隐形灯都是透明的。 采用本发明，LED封装上的电极不再阻挡来自LED内的发光的任何部分。

公开(公告)号：US08410487B1

公开(公告)日：2013-04-02

申请号：US13326528

申请日：2011-12-15

申请人： Wei-Tai Cheng ,  Ming-Hung Chen ,  Ching-Jen Pan

发明人： Wei-Tai Cheng ,  Ming-Hung Chen ,  Ching-Jen Pan

IPC分类号： H01L29/15

CPC分类号： H01L27/153 ,  H01L33/0079

摘要： A manufacturing method and a structure of a light-emitting diode (LED) chip are disclosed. The method includes the steps of: providing a conductive block; providing an epitaxial block; bonding; removing an epitaxial substrate; making independent LEDs; forming a dielectric layer; and making electrical connection. A first LED, a second LED, and a third LED are formed on the conductive block, wherein the first and second LEDs are electrically connected in series, and the second and third LEDs are electrically connected in parallel. Thus, a basic unit with a flexible design of series- and parallel-connected LEDs can be formed to increase the variety and application of LED chip-based designs.

摘要翻译： 公开了一种发光二极管（LED）芯片的制造方法和结构。 该方法包括以下步骤：提供导电块; 提供外延块; 粘接; 去除外延衬底; 制造独立的LED; 形成电介质层; 并进行电气连接。 第一LED，第二LED和第三LED形成在导电块上，其中第一和第二LED串联电连接，并且第二和第三LED并联电连接。 因此，可以形成具有串联和并联LED的灵活设计的基本单元，以增加基于LED芯片的设计的多样性和应用。

公开(公告)号：US08710517B2

公开(公告)日：2014-04-29

申请号：US13407028

申请日：2012-02-28

申请人： Ching-Jen Pan ,  Wei-Tai Cheng ,  Ming-Hung Chen

发明人： Ching-Jen Pan ,  Wei-Tai Cheng ,  Ming-Hung Chen

IPC分类号： H01L27/15

CPC分类号： H01L27/156 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/16

摘要： A high-voltage alternating current (AC) light-emitting diode (LED) structure is provided. The high-voltage AC LED structure includes a circuit substrate and a plurality of high-voltage LED (HV LED) chips. Each one of the HV LED chips includes a first substrate, an adhering layer, first ohmic contact layers, epi-layers, a first insulating layer, at least two first electrically conducting plates, at least two second electrically conducting plates, and a second substrate. The HV LED chips manufactured by a wafer-level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.

摘要翻译： 提供了高压交流（AC）发光二极管（LED）结构。 高压AC LED结构包括电路基板和多个高压LED（HV LED）芯片。 每个HV LED芯片包括第一基板，粘合层，第一欧姆接触层，外延层，第一绝缘层，至少两个第一导电板，至少两个第二导电板和第二基板 。 通过晶片级工艺制造的HV LED芯片耦合到低成本电路基板以产生小型化的高压AC LED结构。

公开(公告)号：US08643291B2

公开(公告)日：2014-02-04

申请号：US13407398

申请日：2012-02-28

申请人： Ching-Jen Pan ,  Wei-Tai Cheng ,  Ming-Hung Chen

发明人： Ching-Jen Pan ,  Wei-Tai Cheng ,  Ming-Hung Chen

IPC分类号： H05B37/00

CPC分类号： H01L25/0753 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a high-voltage alternating current light-emitting diode (AC LED) structure. The high-voltage AC LED structure includes a circuit substrate and a plurality of AC LED chips. The AC LED chips each include an insulated substrate, an LED set, a first metal layer and a second metal layer. The AC LED chips manufactured by a wafer level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.

摘要翻译： 本发明提供一种高压交流发光二极管（AC LED）结构。 高压AC LED结构包括电路基板和多个AC LED芯片。 AC LED芯片各自包括绝缘基板，LED组，第一金属层和第二金属层。 通过晶片级工艺制造的AC LED芯片耦合到低成本电路基板，以产生小型化的高压AC LED结构。

公开(公告)号：US20120018773A1

公开(公告)日：2012-01-26

申请号：US13258627

申请日：2009-04-07

申请人： Jing-Yi Chen ,  Shih-Yi Wen ,  Ching-Jen Pan ,  Ming-Hung Chen

发明人： Jing-Yi Chen ,  Shih-Yi Wen ,  Ching-Jen Pan ,  Ming-Hung Chen

IPC分类号： H01L33/64

CPC分类号： H05B33/0821 ,  H01L2224/48091 ,  H01L2224/73265 ,  H05B33/0803 ,  H05B33/089 ,  Y02B20/341 ,  H01L2924/00014

摘要： The present invention relates to an alternating current (AC) light emitting diode (LED) structure with overload protection, which comprises an AC LED, a heat dissipating unit and an overload protecting unit. The AC LED is thermally connected with the heat dissipating unit, and the overload protecting unit is connected in series between the AC LED and a power source. Thus, when an overload current is inputted to the AC LED structure, the temperature of the overload protecting unit will rise to disconnect the AC LED from the power source. In this way, an open-circuit status can be produced timely in the AC LED structure to block the power input into the AC LED for purpose of protection against overload.

摘要翻译： 本发明涉及具有过载保护的交流（AC）发光二极管（LED）结构，其包括AC LED，散热单元和过载保护单元。 交流LED与散热单元热连接，过载保护单元串联连接在交流LED和电源之间。 因此，当过载电流被输入到AC LED结构时，过载保护单元的温度将升高以将AC LED与电源断开。 以这种方式，可以在AC LED结构中及时产生开路状态，以阻断AC LED的电力输入，以防止过载。

公开(公告)号：US08283638B2

公开(公告)日：2012-10-09

申请号：US12560451

申请日：2009-09-16

申请人： Gou-Chung Chi ,  Ping-Jung Huang ,  Chung-Wei Chen ,  Ching-Jen Pan ,  Yu-Lun Liu ,  Fu-Chun Tsao

发明人： Gou-Chung Chi ,  Ping-Jung Huang ,  Chung-Wei Chen ,  Ching-Jen Pan ,  Yu-Lun Liu ,  Fu-Chun Tsao

IPC分类号： H01J27/02

CPC分类号： H01J27/26 ,  H01J37/08 ,  H01J37/3171

摘要： A method for preparing an ion source from nanoparticles is provided. The method includes the steps of: providing nanoparticles, vaporizing the nanoparticles from a solid state to a gaseous state, and ionizing the gas to form the ion source. The ion source is prepared by placing solid nanoparticles in a stainless tube, heating and vaporizing the solid nanoparticles into a gaseous state, and ionizing the gas. The gas can be formed at a lower heating temperature than when solid lumps are used because solid nanoparticles have a lower melting point than solid lumps. Thus, the heating temperature is lowered, and the preparing time of the ion source is shortened. Besides, under the same temperature, an ion source prepared from nanoparticles provides higher vapor pressure and allows a higher implantation dose than when the ion source is prepared from solid lumps, thus expanding the applicability of ion implantation technology.

摘要翻译： 提供了一种从纳米颗粒制备离子源的方法。 该方法包括以下步骤：提供纳米颗粒，将纳米颗粒从固体状态汽化成气态，并使气体离子化形成离子源。 离子源通过将固体纳米颗粒置于不锈钢管中，将固体纳米颗粒加热并汽化成气态并使气体离子化来制备。 气体可以在比使用固体块时低的加热温度下形成，因为固体纳米颗粒具有比固体块更低的熔点。 因此，加热温度降低，离子源的制备时间缩短。 此外，在相同温度下，从纳米颗粒制备的离子源提供更高的蒸气压力，并且允许比从固体块制备离子源时更高的注入剂量，从而扩大了离子注入技术的适用性。

公开(公告)号：US20110012024A1

公开(公告)日：2011-01-20

申请号：US12560451

申请日：2009-09-16

申请人： Gou-Chung Chi ,  Ping-Jung Huang ,  Chung-Wei Chen ,  Ching-Jen Pan ,  Yu-Lun Liu ,  Fu-Chun Tsao

发明人： Gou-Chung Chi ,  Ping-Jung Huang ,  Chung-Wei Chen ,  Ching-Jen Pan ,  Yu-Lun Liu ,  Fu-Chun Tsao

IPC分类号： H01J27/02

CPC分类号： H01J27/26 ,  H01J37/08 ,  H01J37/3171

摘要： A method for preparing an ion source from nanoparticles is provided. The method includes the steps of: providing nanoparticles, vaporizing the nanoparticles from a solid state to a gaseous state, and ionizing the gas to form the ion source. The ion source is prepared by placing solid nanoparticles in a stainless tube, heating and vaporizing the solid nanoparticles into a gaseous state, and ionizing the gas. The gas can be formed at a lower heating temperature than when solid lumps are used because solid nanoparticles have a lower melting point than solid lumps. Thus, the heating temperature is lowered, and the preparing time of the ion source is shortened. Besides, under the same temperature, an ion source prepared from nanoparticles provides higher vapor pressure and allows a higher implantation dose than when the ion source is prepared from solid lumps, thus expanding the applicability of ion implantation technology.

摘要翻译： 提供了一种从纳米颗粒制备离子源的方法。 该方法包括以下步骤：提供纳米颗粒，将纳米颗粒从固体状态汽化成气态，并使气体离子化形成离子源。 离子源通过将固体纳米颗粒置于不锈钢管中，将固体纳米颗粒加热并汽化成气态并使气体离子化来制备。 气体可以在比使用固体块时低的加热温度下形成，因为固体纳米颗粒具有比固体块更低的熔点。 因此，加热温度降低，离子源的制备时间缩短。 此外，在相同温度下，从纳米颗粒制备的离子源提供更高的蒸气压力，并且允许比从固体块制备离子源时更高的注入剂量，从而扩大了离子注入技术的适用性。