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    SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体结构及其制造方法

    公开(公告)号：US20130265102A1

    公开(公告)日：2013-10-10

    申请号：US13442340

    申请日：2012-04-09

    申请人： Chen-Yuan Lin ,  Cheng-Chi Lin ,  Ching-Lin Chan ,  Shih-Chin Lien ,  Shyi-Yuan Wu

    发明人： Chen-Yuan Lin ,  Cheng-Chi Lin ,  Ching-Lin Chan ,  Shih-Chin Lien ,  Shyi-Yuan Wu

    IPC分类号： H01L29/808 ,  G11C5/14 ,  H01L21/337

    CPC分类号： H01L29/66901 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/1066 ,  H01L29/808

    摘要： A semiconductor structure and method for manufacturing the same are provided. The semiconductor structure includes a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type formed in the deep well and extending down from the surface of the substrate; and a second well having the second conductive type formed in the deep well and extending down from the surface of the substrate, and the second well adjacent to the first well. The first well includes a block region and plural finger regions joined to one side of the block region, while the second well includes plural channel regions interlaced with the finger regions to separate the finger regions.

    摘要翻译： 提供了半导体结构及其制造方法。 半导体结构包括具有第一导电类型的衬底; 具有形成在所述基板中并从所述基板的表面向下延伸的第二导电类型的深阱; 第一阱具有形成在深阱中并从衬底表面向下延伸的第一导电类型; 以及第二阱，其具有形成在深阱中并从衬底的表面向下延伸的第二导电类型，以及与第一阱相邻的第二阱。 第一阱包括连接到块区域的一侧的块区域和多个指状区域，而第二阱包括与手指区域交织的多个沟道区域以分离手指区域。

    Semiconductor structure and method for forming the same
    3.
    发明授权
    Semiconductor structure and method for forming the same 有权
    半导体结构及其形成方法

    公开(公告)号：US08872222B2

    公开(公告)日：2014-10-28

    申请号：US13405001

    申请日：2012-02-24

    申请人： Ching-Lin Chan ,  Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shih-Chin Lien

    发明人： Ching-Lin Chan ,  Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shih-Chin Lien

    IPC分类号： H01L29/739 ,  H01L21/331

    CPC分类号： H01L21/22 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1087 ,  H01L29/42368 ,  H01L29/66325 ,  H01L29/66674 ,  H01L29/66689 ,  H01L29/7393 ,  H01L29/7816 ,  H01L29/861

    摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a first doped region, a second doped region, a doped strip and a top doped region. The first doped region has a first type conductivity. The second doped region is formed in the first doped region and has a second type conductivity opposite to the first type conductivity. The doped strip is formed in the first doped region and has the second type conductivity. The top doped region is formed in the doped strip and has the first type conductivity. The top doped region has a first sidewall and a second sidewall opposite to the first sidewall. The doped strip is extended beyond the first sidewall or the second sidewall.

    摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括第一掺杂区，第二掺杂区，掺杂条和顶掺杂区。 第一掺杂区域具有第一类型的导电性。 第二掺杂区域形成在第一掺杂区域中并且具有与第一类型导电性相反的第二类型导电性。 掺杂条形成在第一掺杂区中，具有第二类型的导电性。 顶部掺杂区形成在掺杂条中，具有第一类型的导电性。 顶部掺杂区域具有与第一侧壁相对的第一侧壁和第二侧壁。 掺杂的带延伸超过第一侧壁或第二侧壁。

    SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
    4.
    发明申请
    SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 有权
    半导体结构及其形成方法

    公开(公告)号：US20130221404A1

    公开(公告)日：2013-08-29

    申请号：US13405001

    申请日：2012-02-24

    申请人： Ching-Lin Chan ,  Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shin-Chin Lien

    发明人： Ching-Lin Chan ,  Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shin-Chin Lien

    IPC分类号： H01L29/739 ,  H01L21/331

    CPC分类号： H01L21/22 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1087 ,  H01L29/42368 ,  H01L29/66325 ,  H01L29/66674 ,  H01L29/66689 ,  H01L29/7393 ,  H01L29/7816 ,  H01L29/861

    摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a first doped region, a second doped region, a doped strip and a top doped region. The first doped region has a first type conductivity. The second doped region is formed in the first doped region and has a second type conductivity opposite to the first type conductivity. The doped strip is formed in the first doped region and has the second type conductivity. The top doped region is formed in the doped strip and has the first type conductivity. The top doped region has a first sidewall and a second sidewall opposite to the first sidewall. The doped strip is extended beyond the first sidewall or the second sidewall.

    摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括第一掺杂区，第二掺杂区，掺杂条和顶掺杂区。 第一掺杂区域具有第一类型的导电性。 第二掺杂区域形成在第一掺杂区域中并且具有与第一类型导电性相反的第二类型导电性。 掺杂条形成在第一掺杂区中，具有第二类型的导电性。 顶部掺杂区形成在掺杂条中，具有第一类型的导电性。 顶部掺杂区域具有与第一侧壁相对的第一侧壁和第二侧壁。 掺杂的带延伸超过第一侧壁或第二侧壁。