公开(公告)号：US07483560B2

公开(公告)日：2009-01-27

申请号：US10679290

申请日：2003-10-07

申请人： Chle Shishido ,  Ryo Nakagaki ,  Maki Tanaka ,  Kenji Watanabe ,  Yuya Toyoshima

发明人： Chle Shishido ,  Ryo Nakagaki ,  Maki Tanaka ,  Kenji Watanabe ,  Yuya Toyoshima

IPC分类号： G06K9/00

CPC分类号： H01L22/34 ,  G01N21/956 ,  G06T7/0004 ,  G06T2207/30148 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of measuring a three dimensional shape of an arbitrary fine pattern on a semiconductor device, an optical measurement system carries out a measurement to obtain cross-section information, and an electron microscope obtains an electron beam image of the arbitrary fine pattern. Plane information and cross-section information obtained from the electron beam image of the arbitrary fine pattern are combined to measure the three dimensional shape of the arbitrary fine pattern.

摘要翻译： 在半导体装置中测定任意精细图案的三维形状的方法中，光学测量系统进行测量以获得横截面信息，并且电子显微镜获得任意精细图案的电子束图像。 从任意精细图案的电子束图像获得的平面信息和横截面信息被组合以测量任意精细图案的三维形状。

公开(公告)号：US20050100205A1

公开(公告)日：2005-05-12

申请号：US10679290

申请日：2003-10-07

申请人： Chle Shishido ,  Ryo Nakagaki ,  Maki Tanaka ,  Kenji Watanabe ,  Yuya Toyoshima

发明人： Chle Shishido ,  Ryo Nakagaki ,  Maki Tanaka ,  Kenji Watanabe ,  Yuya Toyoshima

IPC分类号： G01B15/00 ,  G01N21/956 ,  G06K9/00 ,  G06T7/00 ,  H01J37/22 ,  H01L21/66 ,  H01L23/544

CPC分类号： H01L22/34 ,  G01N21/956 ,  G06T7/0004 ,  G06T2207/30148 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of measuring a three dimensional shape of an arbitrary fine pattern on a semiconductor device, an optical measurement system carries out a measurement to obtain cross-section information, and an electron microscope obtains an electron beam image of the arbitrary fine pattern. Plane information and cross-section information obtained from the electron beam image of the arbitrary fine pattern are combined to measure the three dimensional shape of the arbitrary fine pattern.

摘要翻译： 在半导体装置中测定任意精细图案的三维形状的方法中，光学测量系统进行测量以获得横截面信息，并且电子显微镜获得任意精细图案的电子束图像。 从任意精细图案的电子束图像获得的平面信息和横截面信息被组合以测量任意精细图案的三维形状。

公开(公告)号：US07476856B2

公开(公告)日：2009-01-13

申请号：US10875509

申请日：2004-06-25

申请人： Kenji Watanabe ,  Tadashi Otaka ,  Ryo Nakagaki ,  Chie Shishido ,  Masakazu Takahashi ,  Yuya Toyoshima

发明人： Kenji Watanabe ,  Tadashi Otaka ,  Ryo Nakagaki ,  Chie Shishido ,  Masakazu Takahashi ,  Yuya Toyoshima

IPC分类号： G01N23/00 ,  G01B11/10

CPC分类号： G01N21/4788 ,  G01N23/225 ,  H01J2237/2816

摘要： A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, the method and apparatus may execute the following steps: calculating an average of the dimensional values of a plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of the feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be determined precisely.

摘要翻译： 提供了一种利用光学测量装置和扫描电子显微镜有效地执行两种测量的方法和装置。 例如，该方法和装置可以执行以下步骤：计算多个扫描的特征对象的维度值的平均值; 并且基于计算的平均值与照射光时获得的特征对象的尺寸值之间的差异来计算尺寸值的偏移。 可以精确地确定光学测量装置与扫描电子显微镜之间的测量值之间的偏移。

公开(公告)号：US20050051721A1

公开(公告)日：2005-03-10

申请号：US10875509

申请日：2004-06-25

申请人： Kenji Watanabe ,  Tadashi Otaka ,  Ryo Nakagaki ,  Chie Shishido ,  Masakazu Takahashi ,  Yuya Toyoshima

发明人： Kenji Watanabe ,  Tadashi Otaka ,  Ryo Nakagaki ,  Chie Shishido ,  Masakazu Takahashi ,  Yuya Toyoshima

IPC分类号： G01B11/24 ,  G01B15/04 ,  G01N21/47 ,  G01N23/225 ,  H01J37/28 ,  H01L21/66 ,  G01N23/00

CPC分类号： G01N21/4788 ,  G01N23/225 ,  H01J2237/2816

摘要： A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, The method and apparatus for executing following steps of calculating an average of the dimensional values of said plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of said feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be required precisely by the above subject matter.

摘要翻译： 提供了一种利用光学测量装置和扫描电子显微镜有效地执行两种测量的方法和装置。 例如，用于执行以下步骤的方法和装置，用于计算所述多个扫描的特征对象的维度值的平均值; 并且基于所计算的平均值和当照射光时获得的所述特征对象的尺寸值之间的差异来计算尺寸值的偏移。 精确地通过上述主题来要求光学测量装置和扫描电子显微镜之间的测量值之间的偏移。

公开(公告)号：US20050182595A1

公开(公告)日：2005-08-18

申请号：US11102703

申请日：2005-04-11

申请人： Yasuhiro Mitsui ,  Yasutsugu Usami ,  Isao Kawata ,  Yuya Toyoshima ,  Tadashi Otaka ,  Nobuyuki Iriki

发明人： Yasuhiro Mitsui ,  Yasutsugu Usami ,  Isao Kawata ,  Yuya Toyoshima ,  Tadashi Otaka ,  Nobuyuki Iriki

IPC分类号： G01Q30/04 ,  H01L23/544 ,  G06F15/00

CPC分类号： H01L22/34

摘要： A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

公开(公告)号：US07130063B2

公开(公告)日：2006-10-31

申请号：US11102703

申请日：2005-04-11

申请人： Yasuhiro Mitsui ,  Yasutsugu Usami ,  Isao Kawata ,  Yuya Toyoshima ,  Tadashi Otaka ,  Nobuyuki Iriki

发明人： Yasuhiro Mitsui ,  Yasutsugu Usami ,  Isao Kawata ,  Yuya Toyoshima ,  Tadashi Otaka ,  Nobuyuki Iriki

IPC分类号： G01B11/04

CPC分类号： H01L22/34

摘要： A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

公开(公告)号：US07038767B2

公开(公告)日：2006-05-02

申请号：US10289401

申请日：2002-11-07

申请人： Yuya Toyoshima ,  Yasuhiro Mitsui ,  Yasutsugu Usami ,  Isao Kawata ,  Tadashi Otaka

发明人： Yuya Toyoshima ,  Yasuhiro Mitsui ,  Yasutsugu Usami ,  Isao Kawata ,  Tadashi Otaka

IPC分类号： G01N21/00

CPC分类号： H01L21/67288 ,  G01B11/30 ,  G01B15/04 ,  H01J37/28 ,  H01J2237/2815

摘要： A light beam is emitted to a test pattern place formed in the scribe area on the wafer for height measurement, an electron beam is emitted to the test pattern place for width and contrast measurement and their correlations are stored. The three-dimensional profile of a pattern in a semiconductor device on the wafer is determined by irradiating the pattern with an electron beam to measure the width and contrast and estimating the height of the pattern by inferring from a correlation corresponding to the measured width and contrast. Thus, a three-dimensional profile measuring system and method capable of measuring the three-dimensional profile of a micropattern in a semiconductor device without cutting the wafer are provided.

公开(公告)号：US06894790B2

公开(公告)日：2005-05-17

申请号：US10291675

申请日：2002-11-12

申请人： Yasuhiro Mitsui ,  Yasutsugu Usami ,  Isao Kawata ,  Yuya Toyoshima ,  Tadashi Otaka ,  Nobuyuki Iriki

发明人： Yasuhiro Mitsui ,  Yasutsugu Usami ,  Isao Kawata ,  Yuya Toyoshima ,  Tadashi Otaka ,  Nobuyuki Iriki

IPC分类号： G01Q30/04 ,  H01L23/544 ,  G01B11/02

CPC分类号： H01L22/34

摘要： A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

摘要翻译： 用光束照射在晶片的划线区域中形成的测试图案，以测量其宽度; 用电子束照射测试图案以测量其宽度; 计算测试图案的宽度的变化量; 用电子束照射具有与晶片的半导体器件相同的宽度的虚拟图案，以测量其宽度; 并且通过使用计算出的宽度变化量来估计图案的宽度，以便确定图案的形状。 因此，可以提供能够在不改变微图案的尺寸的情况下确定半导体器件中的微图案的形状的形状测量系统和方法。