公开(公告)号：US20120167820A1

公开(公告)日：2012-07-05

申请号：US13268102

申请日：2011-10-07

申请人： Chong Ming Lee ,  Andrew Eng Jia Lee

发明人： Chong Ming Lee ,  Andrew Eng Jia Lee

IPC分类号： C30B25/02 ,  C30B25/18

CPC分类号： C30B29/40 ,  C30B25/183 ,  C30B29/406 ,  C30B29/48

摘要： A method for making a flat substrate from incremental-width nanorods includes the steps of: providing a base layer, performing a lateral crystal growth process for a plurality of times, and forming a substrate. The base layer has a plurality of nanorods. Each time the lateral crystal growth process is performed, an additive reagent is added at a different concentration to enable lateral crystal growth and thereby increase the width of each nanorod incrementally. The incremental-width nanorods eventually bond with each other to form a substrate. The substrate may go through an annealing process so as to become a flat substrate.

摘要翻译： 用于从增量宽度纳米棒制造平坦基底的方法包括以下步骤：提供基底层，进行多次的横向晶体生长过程，以及形成基底。 基层具有多个纳米棒。 每次进行横向晶体生长处理时，以不同的浓度添加添加剂试剂以使横向晶体生长，从而逐渐增加每个纳米棒的宽度。 增量宽度的纳米棒最终彼此结合形成底物。 基板可以经过退火工艺以便成为平坦的基板。

公开(公告)号：US20120285371A1

公开(公告)日：2012-11-15

申请号：US13268093

申请日：2011-10-07

申请人： Chong Ming Lee ,  Andrew Eng Jia Lee

发明人： Chong Ming Lee ,  Andrew Eng Jia Lee

IPC分类号： C30B25/02 ,  C30B25/18

CPC分类号： C30B29/40 ,  C30B25/18 ,  C30B29/406 ,  C30B29/48

摘要： A method for making a flat substrate from incremental-width nanorods includes the steps of: providing a base layer, performing a lateral crystal growth process for a plurality of times, and forming a substrate. The base layer has a plurality of nanorods. Each time the lateral crystal growth process is performed, an additive reagent is added at a different concentration to enable lateral crystal growth and thereby increase the width of each nanorod incrementally. The incremental-width nanorods eventually bond with each other to form a substrate. The substrate may go through an annealing process so as to become a flat substrate.

摘要翻译： 用于从增量宽度纳米棒制造平坦基底的方法包括以下步骤：提供基底层，进行多次的横向晶体生长过程，以及形成基底。 基层具有多个纳米棒。 每次进行横向晶体生长处理时，以不同的浓度添加添加剂试剂以使横向晶体生长，从而逐渐增加每个纳米棒的宽度。 增量宽度的纳米棒最终彼此结合形成底物。 基板可以经过退火工艺以便成为平坦的基板。

公开(公告)号：US20120280243A1

公开(公告)日：2012-11-08

申请号：US13279337

申请日：2011-10-24

申请人： Chong-Ming Lee ,  Andrew Eng Jia Lee

发明人： Chong-Ming Lee ,  Andrew Eng Jia Lee

IPC分类号： H01L29/02 ,  H01L21/20

CPC分类号： H01L29/0676 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/12

摘要： A fabricating method of a semiconductor substrate is provided. A patterned mask layer is formed on a substrate base. The patterned mask layer includes a plurality of apertures, and each aperture exposes a portion of the substrate base. A plurality of nano-pillars is formed on the substrate base, wherein each nano-pillar is grown on the portion of the substrate base exposed by each aperture. An insulating layer is formed on a sidewall of each nano-pillar. An epitaxial lateral overgrowth process is performed on a top portion of each nano-pillar, so as to form a semiconductor layer on the nano-pillars, wherein the semiconductor layer is exposed by a plurality of gaps disposed between the nano-pillars.

摘要翻译： 提供一种半导体衬底的制造方法。 在基板基底上形成图案化的掩模层。 图案化掩模层包括多个孔，并且每个孔露出基底的一部分。 在衬底基底上形成多个纳米柱，其中每个纳米柱生长在由每个孔暴露的衬底基底的部分上。 在每个纳米柱的侧壁上形成绝缘层。 在每个纳米柱的顶部上进行外延横向过度生长工艺，以便在纳米柱上形成半导体层，其中半导体层被设置在纳米柱之间的多个间隙暴露。