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    Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology
    3.
    发明授权
    Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology 有权
    用于铜后端（BEOL）技术的金属绝缘体金属（MIM）电容器和金属电阻器的制造方法

    公开(公告)号：US06709918B1

    公开(公告)日：2004-03-23

    申请号：US10307674

    申请日：2002-12-02

    申请人： Chit Hwei Ng ,  Jian Xun Li ,  Kok Wai Chew ,  Tjin Tjin Tjoa ,  Chaw Sing Ho ,  Shao Fu Sanford Chu

    发明人： Chit Hwei Ng ,  Jian Xun Li ,  Kok Wai Chew ,  Tjin Tjin Tjoa ,  Chaw Sing Ho ,  Shao Fu Sanford Chu

    IPC分类号： H01L218242

    CPC分类号： H01L28/20 ,  H01L23/5223 ,  H01L23/5228 ,  H01L28/40 ,  H01L2924/0002 ,  Y10S438/959 ,  H01L2924/00

    摘要： A method for making concurrently metal-insulator-metal (MIM) capacitors and a metal resistors in a Cu damascene back-end-of-line process is achieved. The method forms a Cu capacitor bottom metal plate using a dual-damascene process. A Si3N4 or SiC is deposited to form a capacitor dielectric layer on the Cu bottom plate. A metal layer having an upper etch-stop layer is deposited and patterned to form concurrently capacitor top plates and metal resistors. The patterning is terminated in the capacitor dielectric layer to prevent Cu particle contamination. An insulating layer is deposited and via holes are etched to the capacitor top plates and the metal resistors using the upper etch-stop layer to prevent overetching and damage. The method provides a MIM capacitor using only one additional photoresist mask while improving process yield.

    摘要翻译： 实现了一种在金铜绝缘体金属（MIM）电容器和金属电阻器Cu铜镶嵌后端工艺中的制造方法。 该方法使用双镶嵌工艺形成Cu电容器底部金属板。 沉积Si 3 N 4或SiC以在Cu底板上形成电容器电介质层。 具有上蚀刻停止层的金属层被沉积​​并图案化以形成电容器顶板和金属电阻器。 图案化终止在电容器电介质层中以防止Cu颗粒污染。 沉积绝缘层，并且使用上蚀刻停止层将电容器顶板和金属电阻器的通孔蚀刻以防止过蚀刻和损坏。 该方法提供了仅使用一种附加光致抗蚀剂掩模的MIM电容器，同时提高了工艺产量。

    Integrated transformer and method of fabrication thereof
    4.
    发明授权
    Integrated transformer and method of fabrication thereof 有权
    集成变压器及其制造方法

    公开(公告)号：US07570144B2

    公开(公告)日：2009-08-04

    申请号：US11750341

    申请日：2007-05-18

    申请人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    发明人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    IPC分类号： H01F5/00

    CPC分类号： H01F17/0006 ,  H01F17/0013 ,  H01F19/08 ,  H01F27/2804 ,  H01F41/041 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T29/4902 ,  H01L2924/00

    摘要： An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90° in a lateral direction.

    摘要翻译： 集成变压器结构包括与横向轴线相关联的第一线圈元件，第一线圈元件具有至少一匝。 第一线圈元件包括设置在第一横向水平面上的第一部分和设置在第二横向水平面上的第二部分。 第一和第二横向水平面沿着所述横向轴线相互间隔开。 第一和第二部分从所述轴线横向移位不同的相应距离。 所述第一线圈元件的至少一个交叉部分，其中所述第一线圈元件被配置为提供通过所述交叉部分穿过所述交叉部分的所述第一线圈元件的所述第一部分的至少一部分的导电路径，并且随后通过 第一线圈元件的第二部分的至少一部分，其中沿着所述路径的流动方向的任何变化在横向方向上小于90°。

    Transformer with effective high turn ratio
    5.
    发明授权
    Transformer with effective high turn ratio 有权
    变压器有效高匝数比

    公开(公告)号：US08242872B2

    公开(公告)日：2012-08-14

    申请号：US11779892

    申请日：2007-07-19

    申请人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    发明人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    IPC分类号： H01F5/00 ,  H01F27/28

    CPC分类号： H01F27/2804 ,  H01F17/0013 ,  H01F27/006 ,  H01F2017/0073 ,  H01L2924/3011 ,  Y10T29/4902

    摘要： Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.

    摘要翻译： 本发明的实施例提供了一种变压器，包括：第一线圈元件，其沿着横向具有横向轴线，所述第一线圈元件具有p匝，其中p大于或等于1; 以及第二线圈元件，其具有大致平行于所述第一线圈元件的横向轴线的横轴，所述第二线圈元件具有n匝，其中n大于或等于5p; 其中所述第一和第二线圈元件布置成沿平行于横向轴线的横向方向和横向方向沿着所述第二线圈元件的长度的一部分在所述线圈元件之间提供电磁耦合，其中所述横向方向是 垂直于横轴。

    INTEGRATED TRANSFORMER AND METHOD OF FABRICATION THEREOF
    6.
    发明申请
    INTEGRATED TRANSFORMER AND METHOD OF FABRICATION THEREOF 有权
    一体化变压器及其制造方法

    公开(公告)号：US20080284552A1

    公开(公告)日：2008-11-20

    申请号：US11750341

    申请日：2007-05-18

    申请人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    发明人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    IPC分类号： H01F5/00

    CPC分类号： H01F17/0006 ,  H01F17/0013 ,  H01F19/08 ,  H01F27/2804 ,  H01F41/041 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T29/4902 ,  H01L2924/00

    摘要： An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90° in a lateral direction.

    摘要翻译： 集成变压器结构包括与横向轴线相关联的第一线圈元件，第一线圈元件具有至少一匝。 第一线圈元件包括设置在第一横向水平面上的第一部分和设置在第二横向水平面上的第二部分。 第一和第二横向水平面沿着所述横向轴线相互间隔开。 第一和第二部分从所述轴线横向移位不同的相应距离。 所述第一线圈元件的至少一个交叉部分，其中所述第一线圈元件被配置为提供通过所述交叉部分穿过所述交叉部分的所述第一线圈元件的所述第一部分的至少一部分的导电路径，并且随后通过 第一线圈元件的第二部分的至少一部分，其中沿着所述路径的流动方向的任何变化在横向方向上小于90°。