-
1.
公开(公告)号:US06469390B2
公开(公告)日:2002-10-22
申请号:US09296001
申请日:1999-04-21
申请人: Chorng-Ping Chang , Kin Ping Cheung , Chien-Shing Pai , Wei Zhu
发明人: Chorng-Ping Chang , Kin Ping Cheung , Chien-Shing Pai , Wei Zhu
IPC分类号: H01L2348
CPC分类号: H01L23/5222 , H01L23/5329 , H01L2924/0002 , Y10S977/70 , H01L2924/00
摘要: It has been discovered that for semiconductor devices such as MOSFETs, there is significant capacitive coupling in the front-end structure, i.e., the structure from and including the device substrate up to the first metal interconnect level. The invention therefore provides a device comprising a silicon substrate, an isolation structure in the substrate (e.g., shallow trench isolation), an active device structure (e.g., a transistor structure), a dielectric layer over the active device structure, and a metal interconnect layer over the dielectric layer (metal-1 level). At least one of the dielectric components of the front-end structure comprise a material exhibiting a dielectric constant less than 3.5. This relatively low dielectric constant material reduces capacitive coupling in the front-end structure, thereby providing improved properties in the device.
摘要翻译: 已经发现,对于诸如MOSFET的半导体器件,在前端结构中存在显着的电容耦合,即从器件衬底到第一金属互连级别的结构。 因此,本发明提供了一种包括硅衬底,衬底中的隔离结构(例如,浅沟槽隔离),有源器件结构(例如,晶体管结构),有源器件结构上的介电层以及金属互连 层(介电层)(金属-1层)。 前端结构的介电部件中的至少一个包括介电常数小于3.5的材料。 这种相对低的介电常数材料减少了前端结构中的电容耦合,从而在器件中提供了改进的特性。
-
公开(公告)号:US5908312A
公开(公告)日:1999-06-01
申请号:US864220
申请日:1997-05-28
IPC分类号: H01L29/78 , H01L21/265 , H01L21/28 , H01L21/316 , H01L29/51 , H01L21/336
CPC分类号: H01L21/28185 , H01L21/28202 , H01L21/2822 , H01L29/518 , H01L21/26506
摘要: A method of preventing diffusion penetration of the dopant used to dope polysilicon gate material in a MOSFET is disclosed. Atomic nitrogen is introduced into the substrate prior to gate oxide growth. The nitrogen later diffuses upward into the gate oxide and blocks subsequent ion implanted gate dopants from penetrating to the substrate. Low dosages of atomic nitrogen implantation, while not significantly affecting gate oxide growth rate, produce significant improvements in the damage immunity of thin gate oxides.
摘要翻译: 公开了一种防止用于掺杂MOSFET中的多晶硅栅极材料的掺杂剂的扩散渗透的方法。 在栅极氧化物生长之前将原子氮引入衬底中。 然后氮气向上扩散到栅极氧化物中,并阻止随后的离子注入的栅极掺杂剂渗透到衬底。 低剂量的原子氮注入虽然没有显着影响栅极氧化物的生长速率,但对薄栅氧化物的损伤免疫力产生了显着的改善。
-