利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

28 条记录 (耗时 0.015 秒)

    Circuit arrangement with an overcurrent fuse
    1.
    发明授权
    Circuit arrangement with an overcurrent fuse 有权
    具有过流保险丝的电路布置

    公开(公告)号：US08953294B2

    公开(公告)日：2015-02-10

    申请号：US12326590

    申请日：2008-12-02

    申请人： Alfons Graf ,  Christian Arndt

    发明人： Alfons Graf ,  Christian Arndt

    IPC分类号： H02H3/08 ,  H02H9/02 ,  H03K17/082 ,  H02H3/00 ,  H02H7/00 ,  H02H9/08 ,  H02H3/22 ,  H03K17/08

    CPC分类号： H03K17/0822 ,  H03K2017/0806

    摘要： A circuit arrangement includes a semiconductor switch having a control terminal and a load path. A drive circuit is coupled to the control terminal of the semiconductor switch. The drive circuit has a current measuring arrangement for determining a load current flowing through the load path and is designed to prevent the semiconductor switch from being driven in the off state if the load current exceeds a predetermined load current threshold value. A fuse is coupled in series with the load path of the semiconductor switch triggers if a triggering condition dependent at least on the load current is present.

    摘要翻译： 电路装置包括具有控制端和负载路径的半导体开关。 驱动电路耦合到半导体开关的控制端子。 驱动电路具有用于确定流过负载路径的负载电流的电流测量装置，并被设计成如果负载电流超过预定的负载电流阈值，则防止半导体开关被驱动为断开状态。 如果存在至少依赖于负载电流的触发条件，则熔丝与半导体开关的负载路径串联耦合。

    Circuit Arrangement with an Overcurrent Fuse
    2.
    发明申请
    Circuit Arrangement with an Overcurrent Fuse 有权
    带过流保险丝的电路布置

    公开(公告)号：US20090147420A1

    公开(公告)日：2009-06-11

    申请号：US12326590

    申请日：2008-12-02

    申请人： Alfons Graf ,  Christian Arndt

    发明人： Alfons Graf ,  Christian Arndt

    IPC分类号： H02H9/02

    CPC分类号： H03K17/0822 ,  H03K2017/0806

    摘要： A circuit arrangement includes a semiconductor switch having a control terminal and a load path. A drive circuit is coupled to the control terminal of the semiconductor switch. The drive circuit has a current measuring arrangement for determining a load current flowing through the load path and is designed to prevent the semiconductor switch from being driven in the off state if the load current exceeds a predetermined load current threshold value. A fuse is coupled in series with the load path of the semiconductor switch triggers if a triggering condition dependent at least on the load current is present.

    摘要翻译： 电路装置包括具有控制端和负载路径的半导体开关。 驱动电路耦合到半导体开关的控制端子。 驱动电路具有用于确定流过负载路径的负载电流的电流测量装置，并被设计成如果负载电流超过预定的负载电流阈值，则防止半导体开关被驱动为断开状态。 如果存在至少依赖于负载电流的触发条件，则熔丝与半导体开关的负载路径串联耦合。

    Vehicle on-board electric power system
    3.
    发明申请
    Vehicle on-board electric power system 有权
    车载电力系统

    公开(公告)号：US20080007883A1

    公开(公告)日：2008-01-10

    申请号：US11803844

    申请日：2007-05-15

    申请人： Christian Arndt ,  Alfons Graf

    发明人： Christian Arndt ,  Alfons Graf

    IPC分类号： H02H9/04

    CPC分类号： H02H9/041 ,  B60R16/03 ,  H03K17/0822 ,  H03K17/145

    摘要： A vehicle on-board electric power system is disclosed including at least one field-effect-controlled power transistor which applies a vehicle on-board electric power system supply voltage VBB to a load when actuated by a logic circuit. The power transistor has a drain-source breakdown voltage VDS with a positive temperature coefficient TKDS and is provided with a clamping means for protecting against overvoltages VO occurring in the vehicle on-board electric power system. The clamping means has a clamping voltage VCLAMP with a positive temperature coefficient TKCLAMP≈TKDS, the clamping voltage VCLAMP being lower than or equal to an anticipated maximum overvoltage VOmax in the vehicle on-board electric power system.

    摘要翻译： 公开了一种车载电力系统，其包括至少一个场效应控制的功率晶体管，其在由逻辑电路驱动时将车载电力系统电源电压V BB应用于负载 电路。 功率晶体管具有正温度系数TK DS的漏极 - 源极击穿电压V DS DS，并且具有用于防止过电压V O 2的钳位装置， / SUB>发生在车载电力系统中。 钳位装置具有正温度系数钳位电压V钳位钳位电压V钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压钳位电压 / SUB>低于或等于车载电力系统中的预期最大过电压V Omax 。

    Vehicle on-board electric power system
    4.
    发明授权
    Vehicle on-board electric power system 有权
    车载电力系统

    公开(公告)号：US08254070B2

    公开(公告)日：2012-08-28

    申请号：US11803844

    申请日：2007-05-15

    申请人： Christian Arndt ,  Alfons Graf

    发明人： Christian Arndt ,  Alfons Graf

    IPC分类号： H02H9/04

    CPC分类号： H02H9/041 ,  B60R16/03 ,  H03K17/0822 ,  H03K17/145

    摘要： A vehicle on-board electric power system is disclosed including at least one field-effect-controlled power transistor which applies a vehicle on-board electric power system supply voltage VBB to a load when actuated by a logic circuit. The power transistor has a drain-source breakdown voltage VDS with a positive temperature coefficient TKDS and is provided with a clamping means for protecting against overvoltages VO occurring in the vehicle on-board electric power system. The clamping means has a clamping voltage VCLAMP with a positive temperature coefficient TKCLAMP≈TKDS, the clamping voltage VCLAMP being lower than or equal to an anticipated maximum overvoltage VOmax in the vehicle on-board electric power system.

    摘要翻译： 公开了一种车载电力系统，包括至少一个场效应控制的功率晶体管，其在由逻辑电路驱动时将车载电力系统电源电压VBB施加到负载。 功率晶体管具有正温度系数TKDS的漏极 - 源极击穿电压VDS，并且具有用于防止在车载电力系统中发生的过电压VO的钳位装置。 夹紧装置具有正温度系数TKCLAMP≈TKDS的钳位电压VCLAMP，钳位电压VCLAMP低于或等于车载电力系统中的预期最大过电压VOmax。

    Power semiconductor module
    6.
    发明授权
    Power semiconductor module 失效
    功率半导体模块

    公开(公告)号：US6147396A

    公开(公告)日：2000-11-14

    申请号：US250363

    申请日：1999-02-12

    申请人： Wolfgang Troger ,  Alfons Graf

    发明人： Wolfgang Troger ,  Alfons Graf

    IPC分类号： H01H37/74 ,  H01L23/495 ,  H01L23/62

    CPC分类号： H01L23/62 ,  H01H37/74 ,  H01L23/495 ,  H01L23/49562 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/19043

    摘要： A power semiconductor module includes a lead frame, at least one power semiconductor component fastened on said lead frame, a housing at least partly encapsulating said power semiconductor component, a plurality of output lines electrically conductively connected to said power semiconductor component and including load current-carrying output lines, electrically conductive connections between said at least one power semiconductor component and at least said load current-carrying output lines, and an interrupter. The interrupter irreversibly interrupts at least said load current-carrying output lines and/or said electrically conductive connections and at least said load current-carrying output lines, if the temperature of said power semiconductor component exceeds a predetermined temperature threshold. The interrupter is formed of a material having a volume-expanding and/or an oxidizing and/or an explosive characteristic with an increasing temperature.

    摘要翻译： 功率半导体模块包括引线框架，固定在所述引线框架上的至少一个功率半导体部件，至少部分地封装所述功率半导体部件的壳体，与所述功率半导体部件电连接的多个输出线， 承载输出线，所述至少一个功率半导体部件和至少所述负载输出输出线之间的导电连接以及断续器。 如果所述功率半导体部件的温度超过预定的温度阈值，则所述断路器至少不可逆地中断至少所述负载通电输出线路和/或所述导电连接以及至少所述负载通电输出线路。 断路器由具有随温度升高的体积膨胀和/或氧化和/或爆炸特性的材料形成。

    Semiconductor component having upper and lower mounting plates
    7.
    发明授权
    Semiconductor component having upper and lower mounting plates 失效
    半导体元件具有上下安装板

    公开(公告)号：US5982029A

    公开(公告)日：1999-11-09

    申请号：US43322

    申请日：1998-03-20

    申请人： Alfons Graf

    发明人： Alfons Graf

    IPC分类号： H01L23/50 ,  H01L23/495

    CPC分类号： H01L23/49537 ,  H01L2224/45015 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/49171 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/13091 ,  H01L2924/3011

    摘要： A metallic, lower mounting plate (21) is arranged in an insulating housing (20), a semiconductor body (23) with at least one logic part (24, 25) and at least one power part (26) with vertical MOS transistors being arranged on said lower mounting plate (21). A number of upper mounting plates (22) corresponding to the number of power parts (26) is introduced in the housing (20), said number of upper mounting plates (22) being electrically conductively secured on the upper sides of the power parts (26) of the semiconductor body (23) and being electrically connected to leads (4-6, 13-15). The lower leads covered by the upper leads are thereby recessed.

    摘要翻译： PCT No.PCT / DE97 / 01483第 371日期：1998年3月20日 102（e）1998年3月20日PCT PCT 1997年7月14日PCT公布。 公开号WO98 / 03998 日期1998年1月29日金属的下安装板（21）布置在绝缘壳体（20）中，具有至少一个逻辑部分（24,25）和至少一个电源部分（26）的半导体主体（23） 垂直MOS晶体管布置在所述下安装板（21）上。 对应于动力部件（26）的数量的多个上部安装板（22）被引入壳体（20）中，所述上部安装板（22）的数量被导电地固定在动力部件的上侧 26），并且电连接到引线（4-6,13-​​15）。 因此，由上引线覆盖的下引线凹入。

    Semiconductor module
    9.
    发明授权
    Semiconductor module 有权
    半导体模块

    公开(公告)号：US06735065B2

    公开(公告)日：2004-05-11

    申请号：US10141842

    申请日：2002-05-09

    申请人： Alfons Graf ,  Jenoe Tihanyi ,  Wolfgang Tröger

    发明人： Alfons Graf ,  Jenoe Tihanyi ,  Wolfgang Tröger

    IPC分类号： H02H504

    CPC分类号： H01L23/34 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49113 ,  H01L2924/1301 ,  H01L2924/13033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A semiconductor module includes a housing with at least one semiconductor component that is conductively connected to at least one output line. An integrated temperature sensor is also housed in the housing. This sensor is connected, via at least one of its load terminals, to a terminal for receiving a supply potential. The temperature sensor conducts a load current that heats-up the temperature sensor when a first temperature threshold is crossed and a supply potential is in being supplied. A housed interruption device is arranged in such a way that it interrupts the output lines carrying the load current when a second temperature threshold has been exceeded.

    摘要翻译： 半导体模块包括具有至少一个半导体部件的壳体，导电连接到至少一个输出线。 集成温度传感器也容纳在外壳中。 该传感器经由其至少一个负载端子连接到用于接收电源电位的端子。 温度传感器传导负载电流，当跨越第一温度阈值并提供电源电位时，加热温度传感器。 容纳的中断装置被布置成使得当已经超过第二温度阈值时，它中断承载负载电流的输出线。

    Circuit configuration with reduced EMI
    10.
    发明授权
    Circuit configuration with reduced EMI 失效
    电路配置降低EMI

    公开(公告)号：US06323564B1

    公开(公告)日：2001-11-27

    申请号：US08869099

    申请日：1997-06-04

    申请人： Alfons Graf

    发明人： Alfons Graf

    IPC分类号： H02M112

    CPC分类号： H02M1/44 ,  B60R16/03 ,  H02M3/155 ,  H02M2003/1555

    摘要： A circuit configuration with reduced EMC radiation in a motor vehicle includes a semiconductor switch with a load section which is connected, on one hand, through a first supply line to a positive battery terminal and, on the other hand, through a second supply line to a load and a freewheeling diode. A device for pulse-width modulation controls the semiconductor switch. The semiconductor switch and the freewheeling diode are disposed as close as possible to the battery terminal, so that supply leads from the battery to the semiconductor switch and the freewheeling diode are shortened.

    摘要翻译： 在机动车辆中具有减小的EMC辐射的电路配置包括具有负载部分的半导体开关，其一方面通过第一电源线连接到正电池端子，另一方面通过第二供电线 负载和续流二极管。 用于脉冲宽度调制的装置控制半导体开关。 半导体开关和续流二极管尽可能靠近电池端子设置，使得从电池到半导体开关和续流二极管的电源引脚被缩短。