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公开(公告)号：US20060198958A1
公开(公告)日：2006-09-07
申请号：US10553573
申请日：2004-04-08
IPC分类号： C23C16/34
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02208 , H01L21/02271 , H01L21/3185
摘要： Methods for the production of silicon nitride films by vapor-phase growth. A hydrazine gas and at least one precursor gas are fed into a reaction chamber containing a substrate. The precursor gas is either a trisilylamine gas or a silylhydrazine gas. A silicone nitride film is formed through the reaction of the hydrazine gas and the precursor gas.
摘要翻译： 通过气相生长生产氮化硅膜的方法。 将肼气体和至少一种前体气体进料到含有底物的反应室中。 前体气体是三甲基胺气体或甲硅烷基肼气体。 通过肼气体和前体气体的反应形成氮化硅膜。
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公开(公告)号：US08357430B2
公开(公告)日：2013-01-22
申请号：US11573727
申请日：2005-08-17
IPC分类号： C23C16/34
CPC分类号： C23C16/345 , H01L21/3185
摘要： (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR1R2R3 (R1, R2, and R3 are each independently selected from hydrogen and C1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.
摘要翻译： （问题）为了提供通过气相沉积制造氮化硅膜的方法，在使用三甲胺作为前体的同时，可以生产出显示出优异的膜性能的氮化硅膜，并且可以在相对较低的温度和较高的生长速率下进行。 （溶液）氮化硅膜的制造方法，其特征在于，供给气态三甲胺和气态氮源，所述气态三甲胺和气态氮源包含至少两种选自式（1）的胺类化合物的胺类化合物：NR1R2R3（R1，R2和R3分别为 各自独立地选自氢和C 1-6烃基）转化成反应室，其保持至少一个基底并通过使三甲胺和所述氮源反应在所述至少一个基底上形成氮化硅膜。
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3.发明授权Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition 有权通过热化学气相沉积制造氮化硅膜和氧氮化硅膜的方法公开(公告)号：US07192626B2
公开(公告)日：2007-03-20
申请号：US10669623
申请日：2003-09-24
IPC分类号： C23C16/34
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , H01L21/0214 , H01L21/0217 , H01L21/02219 , H01L21/3145 , H01L21/3185
摘要： Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber. This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.
摘要翻译： 通过将三甲胺和氨进料到含有基板的CVD反应室中，在基板上形成氮化硅膜。 将氨气/三甲硅烷气体流量比设定为至少约10的值和/或热CVD反应在不高于约600℃的温度下运行。氮氧化硅通过将氧源气体引入 CVD反应室。 该方法避免了氯化铵的生成和/或碳质污染物的结合，这对沉积膜的质量是有害的。
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4.发明申请Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition 有权通过热化学气相沉积制造氮化硅膜和氧氮化硅膜的方法公开(公告)号：US20050100670A1
公开(公告)日：2005-05-12
申请号：US10669623
申请日：2003-09-24
IPC分类号： C23C16/42 , C23C16/30 , C23C16/34 , H01L21/314 , H01L21/318 , C23C16/00
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , H01L21/0214 , H01L21/0217 , H01L21/02219 , H01L21/3145 , H01L21/3185
摘要： Silicon nitride film is formed on substrate (112) by feeding trisilylamine and ammonia into a CVD reaction chamber (11) that contains a substrate (112). The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber (11). This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.
摘要翻译： 通过将三甲胺和氨进料到含有基板（112）的CVD反应室（11）中，在基板（112）上形成氮化硅膜。 将氨气/三甲硅烷气体流量比设定为至少约10的值和/或热CVD反应在不高于约600℃的温度下运行。氮氧化硅通过将氧源气体引入 CVD反应室（11）。 该方法避免了氯化铵的生成和/或碳质污染物的结合，这对沉积膜的质量是有害的。
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公开(公告)号：US20080260969A1
公开(公告)日：2008-10-23
申请号：US11573727
申请日：2005-08-17
IPC分类号： C23C16/22
CPC分类号： C23C16/345 , H01L21/3185
摘要： (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR1R2R3 (R1, R2, and R3 are each independently selected from hydrogen and C1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.
摘要翻译： （问题）为了提供通过气相沉积制造氮化硅膜的方法，在使用三甲胺作为前体的同时，可以生产出显示出优异的膜性能的氮化硅膜，并且可以在相对较低的温度和较高的生长速率下进行。 （溶液）氮化硅膜的制造方法，其特征在于，供给气态三甲胺和气态氮源，所述气态三甲胺和气态氮源包含至少两种选自式（1）NR 1的胺型化合物的胺型化合物， R 2 R 3（R 1，R 2，R 2，R 3和R 3）是 各自独立地选自氢和C 1-6 - 烃基）转化成反应室，其保持至少一个基底，并通过使三甲胺和所述氮源反应在所述至少一个基底上形成氮化硅膜。
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公开(公告)号：US08367531B1
公开(公告)日：2013-02-05
申请号：US13041154
申请日：2011-03-04
IPC分类号： H01L21/425
CPC分类号： H01L21/26513 , H01J37/3171 , H01L21/26506 , H01L21/26566 , H01L21/2658
摘要： The present invention provides molecules useful for aluminum implant in semiconductor materials. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.
摘要翻译： 本发明提供了可用于半导体材料中的铝植入物的分子。 分子可用于各种掺杂技术，例如离子注入，等离子体掺杂或衍生物方法。
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公开(公告)号：US07482286B2
公开(公告)日：2009-01-27
申请号：US10591629
申请日：2005-02-24
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
IPC分类号： H01L21/469 , H01L21/8242 , H01L21/31 , H01L21/38 , H01L21/22 , H01L21/4763
CPC分类号： C23C16/308 , C23C16/34 , C23C16/401 , C23C16/4481 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28556 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/76841 , Y10S438/907
摘要： Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.
摘要翻译： 通过引入无碳硅源（例如，（SiH 3）3 N），具有通式MXn的金属前体（例如，Hf（NEt 2）4））和氧化 试剂（例如，O 2）进入CVD室，并在基板的表面进行反应。 可以获得MsiN，MSI和/或MSION膜。 这些膜可用作高k电介质膜。
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公开(公告)号：US20080121249A1
公开(公告)日：2008-05-29
申请号：US10583641
申请日：2004-12-10
IPC分类号： B08B5/00
CPC分类号： B08B7/00 , C23C14/564 , C23C16/4405 , C23C16/4412
摘要： To provide an efficient method for cleaning film-forming apparatuses in order to remove a ruthenium-type deposit residing on a constituent member of a film-forming apparatus after said apparatus has been used to form a film comprising ruthenium or solid ruthenium oxide, wherein at least the surface region of the ruthenium-type deposit comprises solid ruthenium oxide.A ruthenium-type deposit, at least the surface region of which is solid ruthenium oxide, is brought into contact with reducing gas that contains a reducing species comprising hydrogen or hydrogen radical and the solid ruthenium oxide is thereby converted into ruthenium metal. This ruthenium metal is subsequently converted into volatile ruthenium oxide by bringing the ruthenium metal into contact with an oxidizing gas that contains an oxidizing species comprising an oxygenated compound, and this volatile ruthenium oxide is removed from the film-forming apparatus.
摘要翻译： 为了提供一种清洁成膜装置的有效方法，以便在所述装置用于形成包含钌或固体氧化钌的膜之后，去除位于成膜装置的构成部件上的钌型沉积物，其中在 钌型沉积物的表面区域最少包含固体氧化钌。 至少其表面区域为固体氧化钌的钌型沉积物与含有包含氢或氢原子的还原物质的还原气体接触，由此将固体氧化钌转化为金属钌。 通过使钌金属与包含含氧化合物的氧化物质的氧化气体接触，随后将该钌金属转化为挥发性氧化钌，并且从成膜设备中除去该挥发性氧化钌。
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9.发明授权Hexakis(monohydrocarbylamino)disilanes and method for the preparation thereof 有权六烷基（单烃基氨基）二硅烷及其制备方法公开(公告)号：US07064083B2
公开(公告)日：2006-06-20
申请号：US11222361
申请日：2005-09-08
IPC分类号： H01L21/31
CPC分类号： C07F7/10
摘要： A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I) ((R)HN)3—Si—Si—(NH(R))3 (I) wherein each R independently represents a C1 to C4 hydrocarbyl. These disilanes may be synthesized by reacting hexachlorodisilane in organic solvent with at least 6-fold moles of the monohydrocarbylamine RNH2 (wherein R is a C1 to C4 hydrocarbyl). Such compounds have excellent film-forming characteristics at low temperatures. These films, particularly in the case of silicon nitride and silicon oxynitride, also have excellent handling characteristics.
摘要翻译： 提供不含氯的硅烷化合物的组合物和制备方法。 化合物是具有通式（I）的六（单烃基氨基）二硅烷，其中式（I）<βin-line-formula description =“In-line Formulas”end =“lead”→（（R）HN） -Si-Si-（NH（R））3（I）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中每个R独立地表示 C 1至C 4烃基。 这些二硅烷可以通过使六氯二硅烷在有机溶剂中与至少6倍摩尔的单烃基胺R N H 2（其中R是C 1至C 4）的反应来合成 烃基）。 这些化合物在低温下具有优异的成膜特性。 这些膜，特别是在氮化硅和氮氧化硅的情况下，也具有优异的处理特性。
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公开(公告)号：US08343860B1
公开(公告)日：2013-01-01
申请号：US13041127
申请日：2011-03-04
IPC分类号： H01L21/425
CPC分类号： H01L21/2658 , H01L21/26506 , H01L21/26513 , H01L21/26566
摘要： The present invention provides molecules with high carbon content for Carbon-containing species implant in semiconductor material. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.
摘要翻译： 本发明为半导体材料中的含碳种类植入物提供具有高碳含量的分子。 分子可用于各种掺杂技术，例如离子注入，等离子体掺杂或衍生物方法。
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