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    AUGMENTING THE FUNCTIONALITY OF NON-DIGITAL OBJECTS USING A DIGITAL GLOVE
    1.
    发明申请
    AUGMENTING THE FUNCTIONALITY OF NON-DIGITAL OBJECTS USING A DIGITAL GLOVE 审中-公开

    公开(公告)号：US20200174567A1

    公开(公告)日：2020-06-04

    申请号：US16207973

    申请日：2018-12-03

    申请人： Christian KLEIN ,  Andrew Stuart GLASS ,  Sang Ho YOON

    发明人： Christian KLEIN ,  Andrew Stuart GLASS ,  Sang Ho YOON

    IPC分类号： G06F3/01 ,  G06N20/00 ,  G06F3/0484 ,  G06F3/0354

    摘要： The disclosed technologies address technical problems, including improving human-computer interaction, by augmenting the functionality provided by non-digital objects using a digital glove. To provide this functionality, a machine learning model is trained using sensor data generated by sensors in a digital glove and data generated by a user input device while the digital glove is utilized to manipulate an object like a user input device. Once trained, the machine learning model can take sensor data generated by a digital glove while manipulating a non-digital object and generate virtual user input device data that can be utilized to control a host computer. A digital glove can also be utilized to perform selection operations using non-digital objects when pressure data generated by one or more of the pressure sensors in the digital glove indicates that pressure was exerted at a finger of the digital glove in excess of a threshold value.

    VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    垂直氮化物半导体发光二极管及其制造方法

    公开(公告)号：US20080042149A1

    公开(公告)日：2008-02-21

    申请号：US11692568

    申请日：2007-03-28

    申请人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

    发明人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

    摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

    摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

    LIGHT EMITTING DIODE (LED) MODULE
    4.
    发明申请
    LIGHT EMITTING DIODE (LED) MODULE 有权
    发光二极管（LED）模块

    公开(公告)号：US20120230033A1

    公开(公告)日：2012-09-13

    申请号：US13408262

    申请日：2012-02-29

    申请人： Sang Ho YOON ,  Hyung Jin KIM

    发明人： Sang Ho YOON ,  Hyung Jin KIM

    IPC分类号： F21V29/00

    CPC分类号： F21K9/00 ,  F21V5/007 ,  F21V17/04 ,  F21V17/06 ,  F21V19/003 ,  F21V23/002 ,  F21V27/02 ,  F21V29/89 ,  F21V31/005 ,  F21W2131/103 ,  F21Y2105/10 ,  F21Y2115/10

    摘要： A light emitting diode (LED) module is provided. The LED module includes a substrate on which an LED is mounted; a heat radiation unit configured to include an insertion hole for passage of a power supply cable that supplies power to the substrate; a lens plate configured to include a lens corresponding to the LED and to cover the substrate; a rubber seal configured to be disposed between the heat radiation unit and the lens plate; and a waterproof structure configured to be inserted in the insertion hole and to include a through hole to receive the power supply cable, wherein the substrate is received in an inner space constructed as the lens plate, the rubber seal, and the heat radiation unit are connected, and the inner space has a waterproof structure.

    摘要翻译： 提供了一种发光二极管（LED）模块。 LED模块包括其上安装有LED的基板; 散热单元，其构造成包括用于通过供电电缆的插入孔，所述电源电缆向所述基板供电; 透镜板，被配置为包括对应于所述LED并且覆盖所述基板的透镜; 配置为设置在所述散热单元和所述透镜板之间的橡胶密封件; 以及防水结构，其被配置为插入到所述插入孔中并且包括用于容纳所述电源电缆的通孔，其中所述基板被接收在构造为所述透镜板的内部空间中，所述橡胶密封件和所述散热单元是 内部空间具有防水结构。

    VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
    垂直氮化物半导体发光二极管及其制造方法

    公开(公告)号：US20110033965A1

    公开(公告)日：2011-02-10

    申请号：US12909204

    申请日：2010-10-21

    申请人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

    发明人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

    IPC分类号： H01L33/44

    CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

    摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

    摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

    VERTICAL GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    VERTICAL GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
    立式氮化镓系发光二极管及其制造方法

    公开(公告)号：US20080048206A1

    公开(公告)日：2008-02-28

    申请号：US11742818

    申请日：2007-05-01

    申请人： Su Yeol LEE ,  Bang Won OH ,  Doo Go BAIK ,  Tae Sung JANG ,  Jong Gun WOO ,  Seok Beom CHOI ,  Sang Ho YOON ,  Dong Woo KIM ,  In Tae YEO

    发明人： Su Yeol LEE ,  Bang Won OH ,  Doo Go BAIK ,  Tae Sung JANG ,  Jong Gun WOO ,  Seok Beom CHOI ,  Sang Ho YOON ,  Dong Woo KIM ,  In Tae YEO

    IPC分类号： H01L33/00 ,  H01L21/20

    CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

    摘要翻译： 制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE ARRAY
    9.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE ARRAY 有权
    氮化物半导体发光器件阵列

    公开(公告)号：US20110198625A1

    公开(公告)日：2011-08-18

    申请号：US13093469

    申请日：2011-04-25

    申请人： Sang Ho YOON ,  Kyeong Ik Min

    发明人： Sang Ho YOON ,  Kyeong Ik Min

    IPC分类号： H01L33/08

    CPC分类号： H01L33/24

    摘要： A nitride semiconductor light emitting device array, which includes a dielectric layer formed on a first conductivity lower nitride semiconductor layer, having a plurality of windows. Each of a plurality of hexagonal pyramid light emission structures is grown from a surface of the first conductivity lower nitride semiconductor layer exposed through each of the windows and onto a peripheral area of the window of the dielectric layer. Each of the hexagonal pyramid light emission structures includes a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order. The windows are disposed in such a triangular arrangement that side surfaces of the adjacent hexagonal pyramid light emission structures face each other. Also, a distance between bases of the adjacent hexagonal pyramid light emission structures is less than 0.3 times an interval between centers of the windows of the adjacent hexagonal pyramid light emission structures.

    摘要翻译： 一种氮化物半导体发光器件阵列，其包括形成在第一导电性低氮化物半导体层上的介电层，具有多个窗口。 多个六边形金字塔发光结构中的每一个从通过每个窗户露出的第一导电性下氮化物半导体层的表面生长到介电层的窗口的外围区域上。 六角锥形发光结构中的每一个包括依次形成的第一导电性上氮化物半导体层，有源层和第二导电氮化物半导体层。 窗口设置成三角形布置，使得相邻的六角锥形发光结构的侧表面彼此面对。 此外，相邻的六角锥形发光结构的基底之间的距离小于相邻六边形金字塔发光结构的窗口的中心之间的间隔的0.3倍。