公开(公告)号：US08829548B2

公开(公告)日：2014-09-09

申请号：US13554026

申请日：2012-07-20

Applicant: Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

Inventor： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

IPC: H01L33/00

CPC classification number: H01L25/167 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

Abstract translation: 发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

公开(公告)号：US20140191194A1

公开(公告)日：2014-07-10

申请号：US14237513

申请日：2011-08-09

Applicant: Seok Min Hwang ,  Jae Ho Han ,  Jae Yoon Kim ,  Hae Soo Ha ,  Su Yeol Lee ,  Je Won Kim

Inventor： Seok Min Hwang ,  Jae Ho Han ,  Jae Yoon Kim ,  Hae Soo Ha ,  Su Yeol Lee ,  Je Won Kim

IPC: H01L33/24 ,  H01L33/06

CPC classification number: H01L33/20 ,  H01L33/14

Abstract: There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.

Abstract translation: 提供一种氮化物半导体发光器件，其能够通过纹理效果提高光提取效率，并且包括：发光结构，形成在基板上，并且包括第一导电型氮化物半导体层和第二导电型氮化物半导体层 其间插入有源层; 电连接到第一导电型氮化物半导体层的第一电极; 电连接到第二导电型氮化物半导体层的第二电极; 以及设置在所述第一电极和所述第二电极之间并且包括通过垂直穿透所述发光结构而形成的多个通孔的光提取图案。

公开(公告)号：US20130020598A1

公开(公告)日：2013-01-24

申请号：US13554026

申请日：2012-07-20

Applicant: Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

Inventor： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

IPC: H01L33/50 ,  H01L33/62

CPC classification number: H01L25/167 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

Abstract translation: 发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

公开(公告)号：US20120298954A1

公开(公告)日：2012-11-29

申请号：US13480184

申请日：2012-05-24

Applicant: Sang Yeon KIM ,  Jong Rak Sohn ,  Gi Bum Kim ,  Su Yeol Lee ,  Yong II Kim

Inventor： Sang Yeon KIM ,  Jong Rak Sohn ,  Gi Bum Kim ,  Su Yeol Lee ,  Yong II Kim

IPC: H01L33/06 ,  H01L33/42

CPC classification number: H01L33/42 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

Abstract: There are provided a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including first and second conductive semiconductor layers with an active layer interposed therebetween; first and second bonding electrodes connected to the first and second conductive semiconductor layers, respectively; a transparent electrode layer formed on the second conductive semiconductor layer; a plurality of nano structures formed on the transparent electrode layer; and a passivation layer formed to cover the plurality of nano-structures, wherein refractive indexes of the transparent electrode layer, the plurality of nano-structures, and the passivation layer may be sequentially reduced.

Abstract translation: 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括发光结构，该发光结构包括介于其间的有源层的第一和第二导电半导体层; 分别连接到第一和第二导电半导体层的第一和第二接合电极; 形成在所述第二导电半导体层上的透明电极层; 形成在所述透明电极层上的多个纳米结构体; 以及形成为覆盖多个纳米结构的钝化层，其中可以依次减少透明电极层，多个纳米结构和钝化层的折射率。

公开(公告)号：US08178378B2

公开(公告)日：2012-05-15

申请号：US12909204

申请日：2010-10-21

Applicant: Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

Inventor： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC: H01L21/56

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/20

Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

Abstract translation: 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US20120098009A1

公开(公告)日：2012-04-26

申请号：US13225979

申请日：2011-09-06

Applicant: Jae Yoon KIM ,  Jin Bock Lee ,  Seok Min Hwang ,  Su Yeol Lee

Inventor： Jae Yoon KIM ,  Jin Bock Lee ,  Seok Min Hwang ,  Su Yeol Lee

IPC: H01L33/60 ,  H01L33/42

CPC classification number: H01L33/005 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.

Abstract translation: 一种半导体发光器件包括：发光结构，其中第一导电半导体层，有源层和第二导电半导体层依次层叠; 形成在所述第一导电半导体层上的第一电极; 形成在所述第二导电半导体层上并由透明材料制成的绝缘层; 反射单元，形成在所述绝缘层上并反射从所述有源层发射的光; 形成在反射单元上的第二电极; 以及形成在所述第二导电半导体层上的透明电极，所述透明电极与所述绝缘层和所述第二电极接触。

公开(公告)号：US07964877B2

公开(公告)日：2011-06-21

申请号：US11822186

申请日：2007-07-03

Applicant: Sang Ho Yoon ,  Su Yeol Lee ,  Dae Yeon Kim

Inventor： Sang Ho Yoon ,  Su Yeol Lee ,  Dae Yeon Kim

IPC: H01L33/00

CPC classification number: H01L33/10 ,  G02F1/13362 ,  H01L33/08 ,  H01L33/20

Abstract: A polarized semiconductor light emitting device includes a semiconductor structure having a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked. Also, the semiconductor structure further includes a plurality of light guide parts defined by a plurality of grooves arranged along a predetermined direction. The grooves extend from the second conductivity semiconductor layer with a depth reaching at least the active layer, and the light guide parts have a length greater than a width thereof to selectively emit a polarized component in a length direction thereof.

Abstract translation: 偏振半导体发光器件包括具有依次堆叠的第一导电半导体层，有源层和第二导电半导体层的半导体结构。 此外，半导体结构还包括由沿着预定方向布置的多个槽限定的多个导光部。 凹槽从第二导电半导体层延伸到至少达到有源层的深度，并且导光部分的长度大于其宽度，以在其长度方向上选择性地发射偏振分量。

公开(公告)号：US20110033965A1

公开(公告)日：2011-02-10

申请号：US12909204

申请日：2010-10-21

Applicant: Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

Inventor： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

IPC: H01L33/44

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/20

Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

Abstract translation: 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US07838317B2

公开(公告)日：2010-11-23

申请号：US12544868

申请日：2009-08-20

Applicant: Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

Inventor： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC: H01L21/56

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/20

Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

Abstract translation: 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US07436001B2

公开(公告)日：2008-10-14

申请号：US11490254

申请日：2006-07-21

Applicant: Jae Hoon Lee ,  Bang Won Oh ,  Hee Seok Choi ,  Jeong Tak Oh ,  Seok Beom Choi ,  Su Yeol Lee

Inventor： Jae Hoon Lee ,  Bang Won Oh ,  Hee Seok Choi ,  Jeong Tak Oh ,  Seok Beom Choi ,  Su Yeol Lee

IPC: H01L27/15

CPC classification number: H01L33/22 ,  H01L33/14

Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.

Abstract translation: 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。 第一n型GaN层具有具有多个突起的不均匀图案。 第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。 有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。 在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。