摘要:
The flip-flop according to the invention serves for storing an item of logic state information and has at least one data input and at least one data output. The flip-flop comprises at least one latch stage for storing the state information if the flip-flop is switched on. Furthermore, the flip-flop according to the invention comprises at least one memory cell having a capacitance as storage element. In this case, the at least one memory cell serves for storing the state information if the flip-flop is switched off.
摘要:
A method and an apparatus for switching on a voltage supply of a voltage domain of a semiconductor circuit is disclosed. A voltage supply is connected to a supply voltage of the semiconductor circuit by means of a switchable element. The switchable element is activated in such a way that, for switching on the voltage supply of the voltage domain, a current through the switchable element rises progressively with at least one intermediate value, in particular stepwise manner.
摘要:
A multi-gate field effect transistor power switch is used to selectively couple a circuit to a supply voltage. In various embodiments, both n and p-type multi-gate field effect transistor power switches may be used to couple sub-circuits of varying granularity to different voltage supplies.
摘要:
The flip-flop according to the invention serves for storing an item of logic state information and has at least one data input and at least one data output. The flip-flop comprises at least one latch stage for storing the state information if the flip-flop is switched on. Furthermore, the flip-flop according to the invention comprises at least one memory cell having a capacitance as storage element. In this case, the at least one memory cell serves for storing the state information if the flip-flop is switched off.
摘要:
An integrated circuit, comprising a first data retention element configured to retain the data, the first data retention element having a first setup time, and a second data retention element configured to retain the data, the second data retention element having a second setup time, the second data retention element further having a data input. The second data retention element is connected in parallel with the first data retention element, and the second data retention element is configurable via the data input such that the second setup time is longer than the first setup time.
摘要:
P-type multi gate field effect transistor access devices are adapted to be coupled to a memory cell to provide access to the memory cell. A method is described that uses a power switch to switch off address decoding circuitry allowing word lines to float toward a high supply voltage, turning off the p-type multi gate field effect transistor access devices.
摘要:
A method and an apparatus for switching on a voltage supply of a voltage domain of a semiconductor circuit is disclosed. A voltage supply is connected to a supply voltage of the semiconductor circuit by means of a switchable element. The switchable element is activated in such a way that, for switching on the voltage supply of the voltage domain, a current through the switchable element rises progressively with at least one intermediate value, in particular stepwise manner.
摘要:
Structures of a circuit are identified. Voltages are propagated to the identified structures. Additionally, internal node voltages for the identified structures are obtained. Asymmetrical operating conditions are identified.