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1.发明授权Method and apparatus for switching on a voltage supply of a semiconductor circuit and corresponding semiconductor circuit 有权用于接通半导体电路和对应的半导体电路的电压源的方法和装置公开(公告)号：US07427882B2
公开(公告)日：2008-09-23
申请号：US11498505
申请日：2006-08-03
申请人： Stephan Henzler , Jörg Berthold , Christian Pacha , Doris Schmitt-Landsiedel , Thomas Nirschl , Georg Georgakos
发明人： Stephan Henzler , Jörg Berthold , Christian Pacha , Doris Schmitt-Landsiedel , Thomas Nirschl , Georg Georgakos
IPC分类号： H03L7/00
CPC分类号： H03K17/567 , H03K17/163 , H03K17/687
摘要： A method and an apparatus for switching on a voltage supply of a voltage domain of a semiconductor circuit is disclosed. A voltage supply is connected to a supply voltage of the semiconductor circuit by means of a switchable element. The switchable element is activated in such a way that, for switching on the voltage supply of the voltage domain, a current through the switchable element rises progressively with at least one intermediate value, in particular stepwise manner.
摘要翻译： 公开了一种用于接通半导体电路的电压域的电压源的方法和装置。 电压源通过可切换元件连接到半导体电路的电源电压。 可切换元件被激活，使得为了接通电压域的电压源，通过可切换元件的电流以至少一个中间值，特别是逐步的方式逐渐升高。
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2.发明申请Method and apparatus for switching on a voltage supply of a semiconductor circuit and corresponding semiconductor circuit 有权用于接通半导体电路和对应的半导体电路的电压源的方法和装置公开(公告)号：US20070085573A1
公开(公告)日：2007-04-19
申请号：US11498505
申请日：2006-08-03
申请人： Stephan Henzler , Jorg Berthold , Christian Pacha , Doris Schmitt-Landsiedel , Thomas Nirschl , Georg Georgakos
发明人： Stephan Henzler , Jorg Berthold , Christian Pacha , Doris Schmitt-Landsiedel , Thomas Nirschl , Georg Georgakos
IPC分类号： H03L7/00
CPC分类号： H03K17/567 , H03K17/163 , H03K17/687
摘要： A method and an apparatus for switching on a voltage supply of a voltage domain of a semiconductor circuit is disclosed. A voltage supply is connected to a supply voltage of the semiconductor circuit by means of a switchable element. The switchable element is activated in such a way that, for switching on the voltage supply of the voltage domain, a current through the switchable element rises progressively with at least one intermediate value, in particular stepwise manner.
摘要翻译： 公开了一种用于接通半导体电路的电压域的电压源的方法和装置。 电压源通过可切换元件连接到半导体电路的电源电压。 可切换元件被激活，使得为了接通电压域的电压源，通过可切换元件的电流以至少一个中间值，特别是逐步的方式逐渐升高。
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3.发明授权公开(公告)号：US07757109B2
公开(公告)日：2010-07-13
申请号：US11454302
申请日：2006-06-15
申请人： Jörg Berthold , Georg Georgakos , Stephan Henzler , Thomas Nirschl , Matthias Schobinger , Doris Schmitt-Landsiedel
发明人： Jörg Berthold , Georg Georgakos , Stephan Henzler , Thomas Nirschl , Matthias Schobinger , Doris Schmitt-Landsiedel
CPC分类号： G06F1/3203 , G06F1/3237 , G06F1/3287 , Y02D10/128 , Y02D10/171
摘要： An integrated circuit includes functional blocks, a power control unit controlling the provision of power to the different functional blocks of the integrated circuit, a detecting unit detecting if a turned off functional block is to be turned on, and a clock signal control unit controlling the provision of the clock signal for the functional blocks. The clock signal control unit interrupts the clock signal for the activated functional blocks of the integrated circuit for a predetermined number of clock cycles. The power control unit provides power to the turned off functional block during the interrupted clock cycles.
摘要翻译： 集成电路包括功能块，控制向集成电路的不同功能块提供电力的功率控制单元，检测关闭功能块是否被接通的检测单元，以及控制该功能块的时钟信号控制单元 提供功能块的时钟信号。 时钟信号控制单元在预定数量的时钟周期中断集成电路的激活功能块的时钟信号。 电源控制单元在中断的时钟周期期间向关闭的功能块供电。
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4.发明申请公开(公告)号：US20070038876A1
公开(公告)日：2007-02-15
申请号：US11454302
申请日：2006-06-15
申请人： Jorg Berthold , Geor Georgakos , Stephan Henzler , Thomas Nirschl , Matthias Schobinger , Doris Schmitt-Landsiedel
发明人： Jorg Berthold , Geor Georgakos , Stephan Henzler , Thomas Nirschl , Matthias Schobinger , Doris Schmitt-Landsiedel
IPC分类号： G06F1/00
CPC分类号： G06F1/3203 , G06F1/3237 , G06F1/3287 , Y02D10/128 , Y02D10/171
摘要： An integrated circuit includes functional blocks, a power control unit controlling the provision of power to the different functional blocks of the integrated circuit, a detecting unit detecting if a turned off functional block is to be turned on, and a clock signal control unit controlling the provision of the clock signal for the functional blocks. The clock signal control unit interrupts the clock signal for the activated functional blocks of the integrated circuit for a predetermined number of clock cycles. The power control unit provides power to the turned off functional block during the interrupted clock cycles.
摘要翻译： 集成电路包括功能块，控制向集成电路的不同功能块提供电力的功率控制单元，检测关闭功能块是否被接通的检测单元，以及控制该功能块的时钟信号控制单元 提供功能块的时钟信号。 时钟信号控制单元在预定数量的时钟周期中断集成电路的激活功能块的时钟信号。 电源控制单元在中断的时钟周期期间向关闭的功能块供电。
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5.发明申请Integrated Circuit Arrangement Comprising a Field Effect Transistor, Especially a Tunnel Field Effect Transistor 有权包括场效应晶体管，特别是隧道场效应晶体管的集成电路布置公开(公告)号：US20090101975A1
公开(公告)日：2009-04-23
申请号：US11816822
申请日：2005-12-09
申请人： Juergen Holz , Ronald Kakoschke , Thomas Nirschl , Christian Pacha , Klaus Schruefer , Thomas Schulz , Doris Schmitt-Landsiedel
发明人： Juergen Holz , Ronald Kakoschke , Thomas Nirschl , Christian Pacha , Klaus Schruefer , Thomas Schulz , Doris Schmitt-Landsiedel
IPC分类号： H01L29/02
CPC分类号： H01L27/0886 , H01L21/823418 , H01L21/823462 , H01L27/1052 , H01L27/1203 , H01L29/66795 , H01L29/7391 , H01L29/7392 , H01L29/78 , H01L29/785 , H01L29/7854 , H01L29/7856
摘要： An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric (GD1) in comparison with other transistors (T2) on the same integrated circuit arrangement (10). As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions (D1, S1) of the tunnel field effect transistor.
摘要翻译： 具体地说，具有与同一集成电路装置（10）上的其它晶体管（T2）相比具有较厚栅极电介质（GD1）的隧道场效应晶体管的解释。 作为替代或另外，所述隧道场效应晶体管具有在沟道形成区域的相对远侧的栅极区域或隧道场效应晶体管的连接区域（D1，S1）之间的界面。
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6.发明授权Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor 有权集成电路装置，其包括场效应晶体管，特别是隧道场效应晶体管公开(公告)号：US08629500B2
公开(公告)日：2014-01-14
申请号：US11816822
申请日：2005-12-09
申请人： Juergen Holz , Ronald Kakoschke , Thomas Nirschl , Christian Pacha , Klaus Schruefer , Thomas Schulz , Doris Schmitt-Landsiedel
发明人： Juergen Holz , Ronald Kakoschke , Thomas Nirschl , Christian Pacha , Klaus Schruefer , Thomas Schulz , Doris Schmitt-Landsiedel
IPC分类号： H01L29/06
CPC分类号： H01L27/0886 , H01L21/823418 , H01L21/823462 , H01L27/1052 , H01L27/1203 , H01L29/66795 , H01L29/7391 , H01L29/7392 , H01L29/78 , H01L29/785 , H01L29/7854 , H01L29/7856
摘要： An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric (GD1) in comparison with other transistors (T2) on the same integrated circuit arrangement (10). As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions (D1, S1) of the tunnel field effect transistor.
摘要翻译： 具体地说，具有与同一集成电路装置（10）上的其它晶体管（T2）相比具有较厚栅极电介质（GD1）的隧道场效应晶体管的解释。 作为替代或另外，所述隧道场效应晶体管具有在沟道形成区域的相对远侧的栅极区域或隧道场效应晶体管的连接区域（D1，S1）之间的界面。
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公开(公告)号：US07679963B2
公开(公告)日：2010-03-16
申请号：US11576416
申请日：2005-07-08
IPC分类号： G11C16/06
CPC分类号： H01L29/7391 , G11C8/08 , G11C16/08 , H01L27/088 , H01L27/105 , H01L27/1203
摘要： An intergrated circuit having a drive circuit is disclosed. One embodiment provides an intergrated memory circuit arrangement with a drive circuit for an EEPROM. In one embodiment, the drive circuit contains tunnel field effect transistors and can be produced in particular on a small chip area.
摘要翻译： 公开了一种具有驱动电路的集成电路。 一个实施例提供了一种具有用于EEPROM的驱动电路的集成存储器电路装置。 在一个实施例中，驱动电路包含隧道场效应晶体管，并且特别可以在小芯片区域上产生。
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公开(公告)号：US20080068895A1
公开(公告)日：2008-03-20
申请号：US11576416
申请日：2005-07-08
IPC分类号： G11C11/34 , H01L29/08 , H03K17/687
CPC分类号： H01L29/7391 , G11C8/08 , G11C16/08 , H01L27/088 , H01L27/105 , H01L27/1203
摘要： An intergrated circuit having a drive circuit is disclosed. One embodiment provides an intergrated memory circuit arrangement with a drive circuit for an EEPROM. In one embodiment, the drive circuit contains tunnel field effect transistors and can be produced in particular on a small chip area.
摘要翻译： 公开了一种具有驱动电路的集成电路。 一个实施例提供了一种具有用于EEPROM的驱动电路的集成存储器电路装置。 在一个实施例中，驱动电路包含隧道场效应晶体管，并且特别可以在小芯片区域上产生。
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公开(公告)号：US08437175B2
公开(公告)日：2013-05-07
申请号：US13408389
申请日：2012-02-29
申请人： Thomas Nirschl , Jan Otterstedt , Michael Bollu , Wolf Allers
发明人： Thomas Nirschl , Jan Otterstedt , Michael Bollu , Wolf Allers
IPC分类号： G11C11/24
摘要： In one embodiment, a bit-line interface is disclosed. The bit-line interface has a multiplexer having a plurality of bit-line outputs, and a write path coupled to a multiplexer signal input. The bit-line interface also has a read path coupled to the multiplexer signal input, wherein the read path and the write path share at least one component.
摘要翻译： 在一个实施例中，公开了位线接口。 位线接口具有多路复用器，其具有多个位线输出，以及耦合到多路复用器信号输入的写入路径。 位线接口还具有耦合到多路复用器信号输入的读取路径，其中读取路径和写入路径共享至少一个组件。
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10.发明授权公开(公告)号：US08416625B2
公开(公告)日：2013-04-09
申请号：US13217448
申请日：2011-08-25
申请人： Thomas Nirschl
发明人： Thomas Nirschl
摘要： In one embodiment, a bit-line driver has a first driver having a source terminal coupled to a high-voltage supply bus and a drain terminal coupled to the bit-line, and a second driver having a source terminal coupled to a high-voltage return bus and a drain terminal coupled to the bit line. The bit-line driver also has a first pre-driver coupled to a gate terminal of the first driver and a second pre-driver coupled to a gate terminal of the second driver. The first and second drivers use a first type of transistor, and the first and second pre-drivers use a second type of transistor. The first type of transistor is rated at a higher voltage than the second type of transistor.
摘要翻译： 在一个实施例中，位线驱动器具有第一驱动器，其具有耦合到高压电源总线的源极端子和耦合到位线的漏极端子，以及具有耦合到高电压的源极端子的第二驱动器 返回总线和耦合到位线的漏极端子。 位线驱动器还具有耦合到第一驱动器的栅极端子的第一预驱动器和耦合到第二驱动器的栅极端子的第二预驱动器。 第一和第二驱动器使用第一类晶体管，第一和第二预驱动器使用第二类晶体管。 第一种晶体管的额定电压高于第二类晶体管。
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