摘要:
A method of modifying a VLSI layout for performance optimization includes defining a revised set of ground rules for a plurality of original device shapes to be modified and flattening the plurality of original device shapes to a prime cell. A layout optimization operation is performed on the flattened device shapes, based on the revised set of ground rules, so as to create a plurality of revised device shapes. An overlay cell is then created from a difference between the revised device shapes and the original device shapes.
摘要:
A design structure for a static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.
摘要:
A mechanism is provided for approximating data switching activity in a data processing system. A data switching activity identification mechanism in the data processing system receives an identification of a set of data storage devices and a set of bits in the set of data storage devices in the data processing system to be monitored for the data switching activity. The data switching activity identification mechanism sums a count of the identified bits that have changed state for the data storage device along with other counts of the identified bits that have changed state for other data storage devices in the set of data storage devices to form an approximation of data switching activity. A power manager in the data processing system then adjusts a set of operational parameters associated with the data processing system using the approximation of data switching activity.
摘要:
The invention generally relates to integrated circuit design, and more particularly to systems and methods for providing power optimization in a hierarchical netlist. A method includes generating a hierarchical netlist of the design, wherein the design includes a plurality of macros. The method also includes determining the timing slack of each path of the design. For each pin of each one of the plurality of macros, the method includes: determining the worst timing path; determining the slack value of the worst timing path; determining the subset of macros of the plurality of macros associated with the worst timing path; determining an apportionment parameter for each one of the subset of macros; determining a distribution of the slack amongst the subset of macros based upon the respective apportionment parameters; and adjusting timing assertions for each one of the subset of macros based upon the distribution of the slack.
摘要:
A static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.
摘要:
A static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.
摘要:
A design structure for a static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.
摘要:
A static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.
摘要:
A mechanism is provided for approximating data switching activity in a data processing system. A data switching activity identification mechanism in the data processing system receives an identification of a set of data storage devices and a set of bits in the set of data storage devices in the data processing system to be monitored for the data switching activity. The data switching activity identification mechanism sums a count of the identified bits that have changed state for the data storage device along with other counts of the identified bits that have changed state for other data storage devices in the set of data storage devices to form an approximation of data switching activity. A power manager in the data processing system then adjusts a set of operational parameters associated with the data processing system using the approximation of data switching activity.
摘要:
A design structure for a circuit for inline testing of memory devices which provides information on the variation of the threshold voltage. The design structure for the circuit includes an array of ring oscillators with a series of inverters, which already exist in the memory device. A control logic systematically steps through all of the ring oscillators by enabling each inverter and toggling the input. The mean frequency and its distribution is measured and recorded in an output circuit. The threshold voltage variation in the memory device is deduced from the ring oscillators. The circuit additionally includes two inverters place external of the memory device. Each ring oscillator is coupled to an inverter. The inverter preconditions the elements of the ring oscillator to prevent a resistive divider between the two transistors.