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1.发明授权Photovoltaic cell comprising a thin lamina having a rear junction and method of making 有权光伏电池包括具有后连接的薄层和制造方法公开(公告)号：US08338209B2
公开(公告)日：2012-12-25
申请号：US12189158
申请日：2008-08-10
CPC分类号： H01L31/0248 , H01L31/022425 , H01L31/068 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： Fabrication of a photovoltaic cell comprising a thin semiconductor lamina may require additional processing after the semiconductor lamina is bonded to a receiver. To minimize high-temperature steps after bonding, the p−n junction is formed at the back of the cell, at the bonded surface. In some embodiments, the front surface of the semiconductor lamina is not doped or is locally doped using low-temperature methods. The base resistivity of the photovoltaic cell may be reduced, allowing a front surface field to be reduced or omitted.
摘要翻译： 在半导体层结合到接收器之后，包括薄半导体层的光伏电池的制造可能需要额外的处理。 为了使结合后的高温步骤最小化，在接合表面处，在电池背面形成p-n结。 在一些实施例中，半导体薄片的前表面不是掺杂的或使用低温方法局部掺杂。 可以减小光伏电池的基极电阻率，从而可以减小或省略前表面场。
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2.发明申请Method to Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina 失效通过在薄型半导体层上构造支撑元件来形成器件的方法公开(公告)号：US20120220068A1
公开(公告)日：2012-08-30
申请号：US13450414
申请日：2012-04-18
申请人： Christopher J. Petti , Mohamed M. Hilali , Theodore Smick , Venkatesan Murali , Kathy J. Jackson , Zhiyong Li , Gopalakrishna Prabhu
发明人： Christopher J. Petti , Mohamed M. Hilali , Theodore Smick , Venkatesan Murali , Kathy J. Jackson , Zhiyong Li , Gopalakrishna Prabhu
IPC分类号： H01L31/0376 , H01L31/18
CPC分类号： H01L31/1892 , H01L31/0747 , H01L31/1864 , Y02E10/50
摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved.Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.
摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与预先形成的支撑元件形成对比，该预制形成的支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，该晶片随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。
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3.发明授权Method to form a device by constructing a support element on a thin semiconductor lamina 有权通过在薄半导体层上构造支撑元件来形成器件的方法公开(公告)号：US08173452B1
公开(公告)日：2012-05-08
申请号：US12980424
申请日：2010-12-29
申请人： Christopher J. Petti , Mohamed M. Hilali , Theodore Smick , Venkatesan Murali , Kathy J. Jackson , Zhiyong Li , Gopalakrishna Prabhu
发明人： Christopher J. Petti , Mohamed M. Hilali , Theodore Smick , Venkatesan Murali , Kathy J. Jackson , Zhiyong Li , Gopalakrishna Prabhu
IPC分类号： H01L21/00
CPC分类号： H01L31/1892 , H01L31/0747 , H01L31/1864 , Y02E10/50
摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal. A device may be formed which comprises the lamina, such as a photovoltaic cell.
摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与刚性或半刚性的预成形支撑元件形成对比，该刚性或半刚性的预成型支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，其中层板随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上; 这种粘合剂可能不能容忍完成装置所需的加工温度和条件。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。 可以形成包括层的器件，例如光伏电池。
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4.发明申请公开(公告)号：US20100240169A1
公开(公告)日：2010-09-23
申请号：US12407064
申请日：2009-03-19
IPC分类号： H01L21/78
CPC分类号： H01L31/068 , H01L21/76254 , H01L31/022441 , H01L31/02363 , H01L31/0682 , H01L31/1892 , Y02E10/547
摘要： A photovoltaic cell is formed by bonding a donor body to a receiver element and cleaving a thin lamina from the donor body. Electrical contact is made to the bonded surface of the lamina through vias formed in the lamina. In some embodiments the emitter exists only at the bonded surface or only at the cleaved surface face; the emitter does not wrap through the vias between the surfaces. Wiring contacting each of the two surfaces is formed only at the cleaved face, and one set of wiring contacts the bonded surface through conductive material formed in the vias, insulated from the via sidewalls.
摘要翻译： 通过将施主体接合到接收器元件并从施主体切割薄层而形成光伏电池。 通过层中形成的通孔对薄片的粘合表面进行电接触。 在一些实施方案中，发射体仅存在于接合表面处或仅在切割的表面处存在; 发射器不会穿过表面之间的通孔。 仅在断裂面形成接触两个表面中的每一个的布线，并且一组布线通过与通孔侧壁绝缘的通孔中形成的导电材料与接合表面接触。
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公开(公告)号：US20100139755A1
公开(公告)日：2010-06-10
申请号：US12331376
申请日：2008-12-09
CPC分类号： H01L31/02008 , H01L31/022433 , H01L31/0475 , H01L31/0508 , H01L31/0747 , H01L31/1892 , Y02E10/50
摘要： A photovoltaic device is disclosed herein that, in various aspects, includes a conductive layer, and a substantially crystalline lamina with a first surface oriented toward the conductive layer and a second surface oriented away from the conductive layer. The lamina thickness is within the range between about 0.2 microns and about 50 microns. An aperture passes through the lamina from the first surface to the second surface. A connector in electrical communication with the conductive layer is disposed through the aperture. Methods of manufacture of the photovoltaic devise are also disclosed.
摘要翻译： 本文公开了一种光电器件，其在各个方面包括导电层，以及具有朝向导电层的第一表面的基本上为晶体的层，以及远离导电层的第二表面。 层厚度在约0.2微米至约50微米之间的范围内。 孔从第一表面到第二表面通过层。 与导电层电连通的连接器穿过孔设置。 还公开了光伏设备的制造方法。
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6.发明授权Method to form a device by constructing a support element on a thin semiconductor lamina 失效通过在薄半导体层上构造支撑元件来形成器件的方法公开(公告)号：US08518724B2
公开(公告)日：2013-08-27
申请号：US13450414
申请日：2012-04-18
申请人： Christopher J. Petti , Mohamed M. Hilali , Theodore Smick , Venkatesan Murali , Kathy J. Jackson , Zhiyong Li , Gopalakrishna Prabhu
发明人： Christopher J. Petti , Mohamed M. Hilali , Theodore Smick , Venkatesan Murali , Kathy J. Jackson , Zhiyong Li , Gopalakrishna Prabhu
CPC分类号： H01L31/1892 , H01L31/0747 , H01L31/1864 , Y02E10/50
摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved.Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.
摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与预先形成的支撑元件形成对比，该预制形成的支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，该晶片随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。
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7.发明授权Photovoltaic cell comprising a thin lamina having low base resistivity and method of making 有权光电池包括具有低基极电阻率的薄层和制造方法公开(公告)号：US08129613B2
公开(公告)日：2012-03-06
申请号：US12189157
申请日：2008-08-10
IPC分类号： H01L31/00
CPC分类号： H01L31/03682 , H01L31/022425 , H01L31/03685 , H01L31/03762 , H01L31/061 , H01L31/1804 , H01L31/1808 , H01L31/1816 , H01L31/1836 , H01L31/1852 , H01L31/1896 , Y02E10/544 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Fabrication of a photovoltaic cell comprising a thin semiconductor lamina may require additional processing after the semiconductor lamina is bonded to a receiver. To minimize high-temperature steps after bonding, the p-n junction is formed at the back of the cell, at the bonded surface. In some embodiments, the front surface of the semiconductor lamina is not doped or is locally doped using low-temperature methods. The base resistivity of the photovoltaic cell may be reduced, allowing a front surface field to be reduced or omitted.
摘要翻译： 在半导体层结合到接收器之后，包括薄半导体层的光伏电池的制造可能需要额外的处理。 为了使结合后的高温步骤最小化，在接合表面处，在电池背面形成p-n结。 在一些实施例中，半导体薄片的前表面不是掺杂的或使用低温方法局部掺杂。 可以减小光伏电池的基极电阻率，从而可以减小或省略前表面场。
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8.发明申请PHOTOVOLTAIC CELL COMPRISING A THIN LAMINA HAVING EMITTER FORMED AT LIGHT-FACING AND BACK SURFACES 审中-公开具有轻型和背面形成的薄层的薄片的光电池公开(公告)号：US20110073175A1
公开(公告)日：2011-03-31
申请号：US12568940
申请日：2009-09-29
CPC分类号： H01L31/1896 , H01L31/022441 , H01L31/03529 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic cell is described having emitter portions formed at both a light-facing surface and a back surface of the cell. In some embodiments, heavily doped emitter regions extend between the front and back emitter regions, connecting them electrically. Use of this structure is particularly well-adapted to a cell formed by implanting a semiconductor donor body with hydrogen and/or helium ions, affixing the donor body to a receiver element, cleaving a lamina from the donor body, and completing fabrication of a photovoltaic cell comprising the lamina. The emitter portion formed at the unbonded surface may comprise amorphous silicon. The lamina may be thin, for example 10 microns thick or less.
摘要翻译： 描述了具有在电池的面向光的表面和后表面两端形成发射极部分的光伏电池。 在一些实施例中，重掺杂发射极区域在前发射极区域和后发射极区域之间延伸，将它们电连接。 这种结构的使用特别适合于通过用氢和/或氦离子注入半导体施主体而形成的电池，将供体体固定在受体元件上，从施主体切割薄层，并完成光电 包含层的细胞。 形成在未结合表面处的发射极部分可以包括非晶硅。 层可以是薄的，例如10微米厚或更小。
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9.发明授权Method for making a photovoltaic cell comprising contact regions doped through a lamina 有权制造光伏电池的方法，该光伏电池包括通过层间掺杂的接触区域公开(公告)号：US07858430B2
公开(公告)日：2010-12-28
申请号：US12339032
申请日：2008-12-18
CPC分类号： H01L31/03921 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： In aspects of the present invention, a method is disclosed to form a lamina having opposing first and second surfaces. Heavily doped contact regions extend from the first surface to the second surface. Generally the lamina is formed by affixing a semiconductor donor body to a receiver element, then cleaving the lamina from the semiconductor donor body wherein the lamina remains affixed to the receiver element. In the present invention, the heavily doped contact regions are formed by doping the semiconductor donor body before cleaving of the lamina. A photovoltaic cell comprising the lamina is then fabricated. By forming the heavily doped contact regions before bonding to the receiver element and cleaving, post-bonding high-temperature steps can be avoided, which may be advantageous.
摘要翻译： 在本发明的方面，公开了一种形成具有相对的第一和第二表面的薄片的方法。 重掺杂的接触区域从第一表面延伸到第二表面。 通常，通过将半导体施主体附着到接收器元件，然后从半导体施主体分离薄层而形成薄片，其中薄片保持固定在接收器元件上。 在本发明中，重掺杂的接触区域通过在切割层之前掺杂半导体施主体形成。 然后制造包括层板的光伏电池。 通过在接合元件接合之前形成重掺杂的接触区域并且断开，可以避免后接合高温步骤，这可能是有利的。
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公开(公告)号：US08633374B2
公开(公告)日：2014-01-21
申请号：US12339038
申请日：2008-12-18
IPC分类号： H01L31/00
CPC分类号： H01L31/03921 , H01L21/187 , H01L21/76254 , H01L31/022441 , H01L31/0682 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： In aspects of the present invention, a lamina is formed having opposing first and second surfaces. Heavily doped contact regions extend from the first surface to the second surface. Generally the lamina is formed by affixing a semiconductor donor body to a receiver element, then cleaving the lamina from the semiconductor donor body wherein the lamina remains affixed to the receiver element. In the present invention, the heavily doped contact regions are formed by doping the semiconductor donor body before cleaving of the lamina. A photovoltaic cell comprising the lamina is then fabricated. By forming the heavily doped contact regions before bonding to the receiver element and cleaving, post-bonding high-temperature steps can be avoided, which may be advantageous.
摘要翻译： 在本发明的方面中，形成具有相对的第一和第二表面的层。 重掺杂的接触区域从第一表面延伸到第二表面。 通常，通过将半导体施主体附着到接收器元件，然后从半导体施主体分离薄层而形成薄片，其中薄片保持固定在接收器元件上。 在本发明中，重掺杂的接触区域通过在切割层之前掺杂半导体施主体形成。 然后制造包括层板的光伏电池。 通过在接合元件接合之前形成重掺杂的接触区域并且断开，可以避免后接合高温步骤，这可能是有利的。
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