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    Methods of forming patterned masks
    8.
    发明授权
    Methods of forming patterned masks 有权
    形成图案化掩模的方法

    公开(公告)号：US08476002B2

    公开(公告)日：2013-07-02

    申请号：US13609027

    申请日：2012-09-10

    申请人： Zishu Zhang ,  Anton J. deVilliers ,  Robert Carr ,  Farrell Good

    发明人： Zishu Zhang ,  Anton J. deVilliers ,  Robert Carr ,  Farrell Good

    IPC分类号： G03F7/26

    CPC分类号： H01L21/02115 ,  H01L21/02274 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/31138

    摘要： Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.

    摘要翻译： 一些实施例包括其中间隔开的第一特征由具有回流温度的第一材料形成的方法。 第二材料沿着第一特征的侧壁形成，第三材料形成在第二材料上和第一特征上。 第三材料可以在高于第一材料的回流温度的温度下形成，并且第二材料可以支撑第一特征，使得第一特征即使暴露于这样的温度也不会折叠。 在一些实施例中，第三材料具有起伏的形貌。 第四材料可以形成在波状形貌的谷中，并且随后可以与第三材料中的至少一些一起去除第一特征以留下包括由第二材料形成的第二特征的图案和由第四材料形成的基座。