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    Process for fabricating a semiconductor device component using lateral metal oxidation
    3.
    发明授权
    Process for fabricating a semiconductor device component using lateral metal oxidation 有权
    使用侧面金属氧化制造半导体器件部件的工艺

    公开(公告)号：US06214683B1

    公开(公告)日：2001-04-10

    申请号：US09290555

    申请日：1999-04-12

    申请人： Qi Xiang ,  Scott Allan Bell ,  Chih-Yuh Yang

    发明人： Qi Xiang ,  Scott Allan Bell ,  Chih-Yuh Yang

    IPC分类号： H01L21336

    CPC分类号： H01L21/28123 ,  H01L21/32139 ,  H01L29/665

    摘要： A process for fabricating a semiconductor device includes the formation of a hard-mask using lithographic techniques followed by a lateral oxidation process to reduce the lateral dimension of the hard-mask. The lateral oxidation is carried out by selectively oxidizing an oxidizable layer situated between an etch-stop layer and an oxidation resistant layer. Upon completion of the lateral oxidation process, etch-stop layer and the oxidation resistant are removed and a residual layer of oxidizable material is then used as a mask for the formation of a device component. The lateral dimension of the residual layer can be substantially less than that achievable by optical lithographic techniques.

    摘要翻译： 制造半导体器件的方法包括使用光刻技术形成硬掩膜，然后进行横向氧化处理以减小硬掩模的横向尺寸。 侧向氧化通过选择性地氧化位于蚀刻停止层和抗氧化层之间的可氧化层来进行。 在完成横向氧化工艺后，去除蚀刻停止层和耐氧化层，然后使用剩余的可氧化材料层作为用于形成器件部件的掩模。 残余层的横向尺寸可以显着小于通过光学平版印刷技术实现的尺寸。

    Process for fabricating a semiconductor device component by oxidizing a silicon hard mask
    4.
    发明授权
    Process for fabricating a semiconductor device component by oxidizing a silicon hard mask 有权
    通过氧化硅硬掩模来制造半导体器件部件的工艺

    公开(公告)号：US06323093B1

    公开(公告)日：2001-11-27

    申请号：US09290088

    申请日：1999-04-12

    申请人： Qi Xiang ,  Scott Allan Bell ,  Chih-Yuh Yang

    发明人： Qi Xiang ,  Scott Allan Bell ,  Chih-Yuh Yang

    IPC分类号： H01L21336

    CPC分类号： H01L21/28123

    摘要： A process for fabricating a semiconductor device includes the formation of a hard-mask using lithographic techniques, followed by an oxidation process to reduce the lateral dimension of the hard-mask. The oxidation process is carried out by selectively oxidizing an oxidizable layer overlying an etch-stop layer. Upon completion of the oxidation process, the etch-stop layer is removed and a residual layer of oxidizable material is then used as a mask for the formation of a device component. The lateral dimension of the residual layer can be substantially less than that achievable by optical lithographic techniques.

    摘要翻译： 制造半导体器件的方法包括使用光刻技术形成硬掩模，随后进行氧化处理以减小硬掩模的横向尺寸。 通过选择性地氧化覆盖在蚀刻停止层上的可氧化层来进行氧化过程。 氧化工艺完成后，去除蚀刻停止层，然后使用剩余的可氧化材料层作为形成器件部件的掩模。 残余层的横向尺寸可以显着小于通过光学平版印刷技术实现的尺寸。

    Process for fabricating a semiconductor device component using a selective silicidation reaction
    5.
    发明授权
    Process for fabricating a semiconductor device component using a selective silicidation reaction 有权
    使用选择性硅化反应制造半导体器件部件的工艺

    公开(公告)号：US06211044B1

    公开(公告)日：2001-04-03

    申请号：US09290087

    申请日：1999-04-12

    申请人： Qi Xiang ,  Scott Allan Bell ,  Chih-Yuh Yang

    发明人： Qi Xiang ,  Scott Allan Bell ,  Chih-Yuh Yang

    IPC分类号： H01L213205

    CPC分类号： H01L21/28123 ,  H01L29/6659

    摘要： A process for fabricating a semiconductor device includes the formation of a hard-mask using lithographic techniques followed by a selective silicidation reaction process to reduce the lateral dimension of the hard-mask. The silicidation reaction is carried out by selectively reacting a reaction layer situated between an etch-stop layer and a reaction resistant layer. Upon completion of the chemical reaction process, the etch-stop layer and the reaction resistant layer is removed, and a residual layer of unreacted material is then used as a mask for the formation of a device component. The lateral dimension of the residual layer can be substantially less than that achievable by optical lithographic techniques.

    摘要翻译： 制造半导体器件的方法包括使用光刻技术形成硬掩膜，然后进行选择性硅化反应工艺以减小硬掩模的横向尺寸。 通过选择性地使位于蚀刻停止层和反应层之间的反应层反应来进行硅化反应。 化学反应过程完成后，除去蚀刻停止层和反应层，然后使用残留的未反应材料层作为形成器件组分的掩模。 残余层的横向尺寸可以显着小于通过光学平版印刷技术实现的尺寸。

    Process for fabricating a metal semiconductor device component by lateral oxidization
    6.
    发明授权
    Process for fabricating a metal semiconductor device component by lateral oxidization 有权
    通过侧面氧化制造金属半导体器件部件的工艺

    公开(公告)号：US06287918B1

    公开(公告)日：2001-09-11

    申请号：US09290086

    申请日：1999-04-12

    申请人： Qi Xiang ,  Scott Allan Bell ,  Chih-Yuh Yang

    发明人： Qi Xiang ,  Scott Allan Bell ,  Chih-Yuh Yang

    IPC分类号： H01L21336

    CPC分类号： H01L21/28079 ,  H01L21/28123 ,  H01L21/31683

    摘要： A process for fabricating a semiconductor device includes the formation of a metal device feature layer using lithographic techniques, followed by an oxidation process to reduce the lateral dimension of the metal device feature. The oxidation process is carried out by selectively, laterally oxidizing the metal composition of the device feature that overlies a dielectric layer. The lateral oxidation process forms metal oxide sidewall spacers on the device feature. Upon completion of the oxidation process, the metal oxide sidewall spacers are removed and a residual layer of unoxidized metal remains. The lateral dimension of the residual layer can be substantially less than that achievable by optical lithographic techniques.

    摘要翻译： 制造半导体器件的方法包括使用光刻技术形成金属器件特征层，随后进行氧化处理以减小金属器件特征的横向尺寸。 通过选择性地横向氧化覆盖在电介质层上的器件特征的金属组合物进行氧化过程。 横向氧化工艺在器件特征上形成金属氧化物侧壁间隔物。 氧化工艺完成后，去除金属氧化物侧壁间隔物，剩下残留的未氧化金属层。 残余层的横向尺寸可以显着小于通过光学平版印刷技术实现的尺寸。