公开(公告)号：US20080213069A1

公开(公告)日：2008-09-04

申请号：US12028993

申请日：2008-02-11

申请人： Chul-Gi Song ,  Deok-yong Kim ,  Yong-Chul Lee

发明人： Chul-Gi Song ,  Deok-yong Kim ,  Yong-Chul Lee

IPC分类号： H01L21/67

CPC分类号： H01L21/67772 ,  H01L21/67034 ,  H01L21/67115

摘要： An apparatus for fabricating semiconductor devices is provided. The apparatus includes a process equipment in which a process is performed and a transfer system attached to the process equipment to supply a substrate to the process equipment. The transfer system includes a transfer robot for moving the substrate and a light supplier for supplying ultraviolet rays to the substrate. Methods of fabricating the semiconductor devices using the apparatus are also provided.

摘要翻译： 提供一种用于制造半导体器件的装置。 该设备包括其中执行处理的处理设备和附接到处理设备以将基板供应到处理设备的传送系统。 传送系统包括用于移动基板的传送机器人和用于向基板供应紫外线的光供应器。 还提供了使用该装置制造半导体器件的方法。

公开(公告)号：US6100102A

公开(公告)日：2000-08-08

申请号：US265840

申请日：1999-03-10

申请人： Yang-hyong Kim ,  Chun-ha Hwang ,  Hyo-cheon Kang ,  Deok-yong Kim

发明人： Yang-hyong Kim ,  Chun-ha Hwang ,  Hyo-cheon Kang ,  Deok-yong Kim

IPC分类号： H01L21/76 ,  G01R31/307 ,  H01L21/66 ,  G01R31/26

CPC分类号： G01R31/307

摘要： A method of in-line monitoring for shallow pits formed on a semiconductor substrate using an electron beam. The electron beam is scanned across exposed pads on the semiconductor substrate and relative concentrations of secondary electrodes are examined to identify shallow pits.

摘要翻译： 使用电子束在半导体衬底上形成的浅凹坑进行在线监测的方法。 电子束扫描在半导体衬底上的暴露焊盘上，并检查次级电极的相对浓度以识别浅凹坑。

公开(公告)号：US06545491B2

公开(公告)日：2003-04-08

申请号：US09940943

申请日：2001-08-28

申请人： Yang-hyong Kim ,  Hyo-cheon Kang ,  Deok-yong Kim

发明人： Yang-hyong Kim ,  Hyo-cheon Kang ,  Deok-yong Kim

IPC分类号： G01R31305

CPC分类号： H01J37/268 ,  G01R31/307 ,  H01J2237/2817

摘要： The present invention provides apparatus and methods for detecting defects in a semiconductor device. The semiconductor device includes a plurality of conductive pads, which may be formed, for example, between insulating layers for insulating the conductive pads from conductive lines formed between ones of the conductive pads. Electrons and/or holes are accumulated in ones of the conductive pads, for example, on the surface of the conductive pads. A contrast associated with one of the conductive pads is detected based on secondary electron emissions from the ones of the conductive pads after accumulation of the electrons and/or holes. The presence of defects is determined based on the detected contrast.

公开(公告)号：US06525318B1

公开(公告)日：2003-02-25

申请号：US09384885

申请日：1999-08-27

申请人： Yang hyong Kim ,  Hyo-cheon Kang ,  Deok-yong Kim ,  Sang-myun Lee

发明人： Yang hyong Kim ,  Hyo-cheon Kang ,  Deok-yong Kim ,  Sang-myun Lee

IPC分类号： H01J37256

CPC分类号： G01N23/22 ,  H01J2237/2817

摘要： Methods of inspecting integrated circuit substrates include the steps of directing a beam of electrons into a first conductive plug located within a first contact hole on an integrated circuit substrate and then measuring a quantity of electrons emitted from the first conductive plug to determine an absence or presence of an electrically insulating residue in the first contact hole. The quantity of electrons emitted from the first conductive plug by secondary electron emission can be measured in order to determine whether electrons are being accumulated within the conductive plug because an insulating residue is blocking passage of the electrons into an underlying conductive portion of the substrate. If an electrically insulating residue is present, then sufficient repulsive forces between the accumulated electrons will result in the secondary emission of excess electrons from an upper surface of the conductive plug as the conductive plug is being irradiated with the electron beam. A detector can then be used to measure the quantity of the emitted electrons against a threshold level, in order determine whether the quantity of electrons emitted by secondary emission is sufficient to indicate that an insulating residue is present in the contact hole.

摘要翻译： 检查集成电路基板的方法包括以下步骤：将电子束引导到位于集成电路基板上的第一接触孔内的第一导电插塞中，然后测量从第一导电插塞发射的电子量以确定不存在或存在 的第一接触孔中的电绝缘残渣。 可以测量从第一导电插塞通过二次电子发射发射的电子的量，以便确定电子是否积聚在导电插塞内，因为绝缘残留物阻挡电子通过基底的下面的导电部分。 如果存在电绝缘的残留物，则当导电塞被电子束照射时，积聚的电子之间的足够的排斥力将导致从导电塞的上表面二次发射多余的电子。 然后可以使用检测器来测量发射的电子的量相对于阈值水平，以便确定由二次发射发射的电子的量是否足以表明在接触孔中存在绝缘残留物。