公开(公告)号：US20160204043A1

公开(公告)日：2016-07-14

申请号：US15078232

申请日：2016-03-23

Applicant: Woong-Kyu Son ,  Kwang-Hoon KIM ,  Deok-Yong KIM ,  Sung-Soo MOON ,  Jung-Hoon BYUN ,  Ji-Hye LEE ,  Choon-Shik LEEM ,  Soo-Bok CHIN

Inventor： Woong-Kyu Son ,  Kwang-Hoon KIM ,  Deok-Yong KIM ,  Sung-Soo MOON ,  Jung-Hoon BYUN ,  Ji-Hye LEE ,  Choon-Shik LEEM ,  Soo-Bok CHIN

IPC: H01L21/66 ,  G01N21/956 ,  G01N21/88 ,  G01N21/95

CPC classification number: H01L22/12 ,  G01N21/21 ,  G01N21/33 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/8848 ,  G03F7/70625

Abstract: The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.

Abstract translation: 本发明的概念提供了使用偏振光来实时监控半导体制造工艺的装置和方法。 在一些实施例中，该装置包括被配置为产生光的光源，被配置为将光朝向正被处理的晶片反射的分束器，物镜偏振器，被配置为使朝向晶片反射的光偏振，并允许由晶片反射的光 通过其配置成根据波长分离由晶片反射的光的火焰光栅，被配置为检测分离的光的阵列检测器和分析器，以分析在晶片中形成的结构/图案的三维轮廓。

公开(公告)号：US20080213069A1

公开(公告)日：2008-09-04

申请号：US12028993

申请日：2008-02-11

Applicant: Chul-Gi Song ,  Deok-yong Kim ,  Yong-Chul Lee

Inventor： Chul-Gi Song ,  Deok-yong Kim ,  Yong-Chul Lee

IPC: H01L21/67

CPC classification number: H01L21/67772 ,  H01L21/67034 ,  H01L21/67115

Abstract: An apparatus for fabricating semiconductor devices is provided. The apparatus includes a process equipment in which a process is performed and a transfer system attached to the process equipment to supply a substrate to the process equipment. The transfer system includes a transfer robot for moving the substrate and a light supplier for supplying ultraviolet rays to the substrate. Methods of fabricating the semiconductor devices using the apparatus are also provided.

Abstract translation: 提供一种用于制造半导体器件的装置。 该设备包括其中执行处理的处理设备和附接到处理设备以将基板供应到处理设备的传送系统。 传送系统包括用于移动基板的传送机器人和用于向基板供应紫外线的光供应器。 还提供了使用该装置制造半导体器件的方法。

公开(公告)号：US07200258B2

公开(公告)日：2007-04-03

申请号：US10442955

申请日：2003-05-22

Applicant: Byoung-Ho Lee ,  Deok-Yong Kim

Inventor： Byoung-Ho Lee ,  Deok-Yong Kim

IPC: G06K9/00

CPC classification number: G03F7/7065 ,  G01N21/95607 ,  G06T7/0002 ,  G06T7/001 ,  G06T2207/30148

Abstract: A method for selecting reference images, a method and an apparatus for inspecting patterns on a wafer, and a method for dividing a wafer into application regions. In a method for inspecting patterns according to at least one exemplary embodiment of the present invention, a plurality of reference dies may be selected and a difference in gray levels of images of the references dies may be determined. The reference dies may include a first die substantially centrally located on the wafer and at least one second die located at an edge portion of the wafer. One reference image is selected if the difference in gray levels is within a permitted tolerance and more than one reference image may be selected if the difference in gray levels is not within the permitted tolerance. A pattern inspection may be performed using the reference images.

Abstract translation: 一种用于选择参考图像的方法，用于检查晶片上的图案的方法和装置以及将晶片分割成应用区域的方法。 在根据本发明的至少一个示例性实施例的用于检查图案的方法中，可以选择多个参考管芯，并且可以确定参考管芯的图像的灰度级差。 参考管芯可以包括基本中心地位于晶片上的第一管芯和位于晶片边缘部分的至少一个第二管芯。 如果灰度级差在允许公差内，则选择一个参考图像，如果灰度级差不在允许的公差内，则可以选择多于一个参考图像。 可以使用参考图像来执行图案检查。

公开(公告)号：US07084969B2

公开(公告)日：2006-08-01

申请号：US10801525

申请日：2004-03-12

Applicant: Deok-Yong Kim ,  Seong-Jin Kim

Inventor： Deok-Yong Kim ,  Seong-Jin Kim

IPC: G01N21/00

CPC classification number: G02B7/32 ,  G01N21/8806 ,  G01N21/9501

Abstract: According to a method of optimizing a focus of an optical inspection apparatus, a first light is irradiated onto a substrate. Then, the first light is reflected on the substrate to form a second light. The second light is sensed with various foci to form image information corresponding to each of the foci. Then, a relation between foci of the optical inspection apparatus and gain value corresponding to the image information is obtained. Then, the focus corresponding to a minimum gain value is set up as an optimized focus. Thus, a focus of an optical inspection apparatus is accurately adjusted to enhance efficiency of defecting defects, so that defects of semiconductor apparatus are more accurately detected.

Abstract translation: 根据优化光学检查装置的焦点的方法，将第一光照射到基板上。 然后，第一光在基板上反射，形成第二光。 用各种焦点感测第二光，以形成与每个焦点对应的图像信息。 然后，获得光学检查装置的焦点与对应于图像信息的增益值之间的关系。 然后，将对应于最小增益值的焦点设置为优化焦点。 因此，精确地调整光学检查装置的焦点以提高缺陷缺陷的效率，从而更精确地检测半导体装置的缺陷。

公开(公告)号：US6100102A

公开(公告)日：2000-08-08

申请号：US265840

申请日：1999-03-10

Applicant: Yang-hyong Kim ,  Chun-ha Hwang ,  Hyo-cheon Kang ,  Deok-yong Kim

Inventor： Yang-hyong Kim ,  Chun-ha Hwang ,  Hyo-cheon Kang ,  Deok-yong Kim

IPC: H01L21/76 ,  G01R31/307 ,  H01L21/66 ,  G01R31/26

CPC classification number: G01R31/307

Abstract: A method of in-line monitoring for shallow pits formed on a semiconductor substrate using an electron beam. The electron beam is scanned across exposed pads on the semiconductor substrate and relative concentrations of secondary electrodes are examined to identify shallow pits.

Abstract translation: 使用电子束在半导体衬底上形成的浅凹坑进行在线监测的方法。 电子束扫描在半导体衬底上的暴露焊盘上，并检查次级电极的相对浓度以识别浅凹坑。

公开(公告)号：US07245365B2

公开(公告)日：2007-07-17

申请号：US10822055

申请日：2004-04-08

Applicant: Deok-Yong Kim ,  Duck-Sun Yang

Inventor： Deok-Yong Kim ,  Duck-Sun Yang

IPC: G01N21/00

CPC classification number: G01N21/94 ,  G01N21/9501

Abstract: An apparatus for detecting particles located on an object includes an emitter for irradiating lights to the particles. The object is disposed on a stage in a direction substantially parallel to a surface of the object. The apparatus further includes a driver for generating a relative motion between the emitter and the object for scanning the surface of the object with the lights and a detector for detecting the lights emitted from the emitter or lights scattered from the particle. With embodiments of the present invention, the particles can be quickly detected.

Abstract translation: 用于检测位于物体上的颗粒的装置包括用于向颗粒照射光的发射器。 物体沿基本平行于物体表面的方向设置在舞台上。 该装置还包括用于产生发射器和物体之间的相对运动的驱动器，用于用光扫描物体的表面，以及用于检测从发射器发射的光或从颗粒散射的光的检测器。 利用本发明的实施例，可以快速检测颗粒。

公开(公告)号：US07466853B2

公开(公告)日：2008-12-16

申请号：US10749670

申请日：2003-12-30

Applicant: Deok-Yong Kim ,  Byoung-Ho Lee

Inventor： Deok-Yong Kim ,  Byoung-Ho Lee

IPC: G06K9/00

CPC classification number: G01N21/9501

Abstract: A light is irradiated on a wafer including a plurality of pixels. Image information corresponding to each pixel is measured by sensing the light reflected by the wafer surface. A raw datum is calculated by subtracting the image information of a corresponding pixel from the image information of a target pixel. The target pixel is a subject pixel for detecting a defect. The corresponding pixel is a pixel located in a first device unit and corresponds to the target pixel. The first device unit is located adjacent to a second device unit that includes the target pixel. The threshold region is preset to have at least one pair of upper and lower limits. The target pixel is marked as a defective pixel when the raw datum thereof is included in the threshold region. Accordingly, the killer defect can be detected separate from the non-killer defects that are usually detected together with the killer defects.

Abstract translation: 将光照射在包括多个像素的晶片上。 通过感测由晶片表面反射的光来测量与每个像素对应的图像信息。 通过从目标像素的图像信息中减去相应像素的图像信息来计算原始数据。 目标像素是用于检测缺陷的主题像素。 对应的像素是位于第一设备单元中并且对应于目标像素的像素。 第一设备单元位于与包括目标像素的第二设备单元相邻的位置。 阈值区域被预设为具有至少一对上限和下限。 当其原始数据被包括在阈值区域中时，目标像素被标记为缺陷像素。 因此，可以与通常与杀手缺陷一起检测的非杀伤性缺陷分开检测杀伤瑕疵。

公开(公告)号：US06995074B2

公开(公告)日：2006-02-07

申请号：US10393015

申请日：2003-03-21

Applicant: Deok-Yong Kim

Inventor： Deok-Yong Kim

IPC: H01L21/76

CPC classification number: H01L22/34

Abstract: A method for forming a semiconductor wafer such as a standard semiconductor wafer used in a surface analysis system. Openings may be formed by partially etching a semiconductor substrate, and an insulation film may be formed on the openings. Contact holes may be formed to expose portions of the semiconductor substrate and the insulation film in the openings. The contact holes may be inspected by the surface analysis system, and the reliability of data obtained from the surface analysis system may be more precisely discriminated.

Abstract translation: 一种用于形成表面分析系统中使用的诸如标准半导体晶片的半导体晶片的方法。 可以通过部分蚀刻半导体衬底来形成开口，并且可以在开口上形成绝缘膜。 可以形成接触孔以暴露出开口中的半导体衬底和绝缘膜的部分。 可以通过表面分析系统检查接触孔，并且可以更精确地区分从表面分析系统获得的数据的可靠性。

公开(公告)号：US06545491B2

公开(公告)日：2003-04-08

申请号：US09940943

申请日：2001-08-28

Applicant: Yang-hyong Kim ,  Hyo-cheon Kang ,  Deok-yong Kim

Inventor： Yang-hyong Kim ,  Hyo-cheon Kang ,  Deok-yong Kim

IPC: G01R31305

CPC classification number: H01J37/268 ,  G01R31/307 ,  H01J2237/2817

Abstract: The present invention provides apparatus and methods for detecting defects in a semiconductor device. The semiconductor device includes a plurality of conductive pads, which may be formed, for example, between insulating layers for insulating the conductive pads from conductive lines formed between ones of the conductive pads. Electrons and/or holes are accumulated in ones of the conductive pads, for example, on the surface of the conductive pads. A contrast associated with one of the conductive pads is detected based on secondary electron emissions from the ones of the conductive pads after accumulation of the electrons and/or holes. The presence of defects is determined based on the detected contrast.

公开(公告)号：US06525318B1

公开(公告)日：2003-02-25

申请号：US09384885

申请日：1999-08-27

Applicant: Yang hyong Kim ,  Hyo-cheon Kang ,  Deok-yong Kim ,  Sang-myun Lee

Inventor： Yang hyong Kim ,  Hyo-cheon Kang ,  Deok-yong Kim ,  Sang-myun Lee

IPC: H01J37256

CPC classification number: G01N23/22 ,  H01J2237/2817

Abstract: Methods of inspecting integrated circuit substrates include the steps of directing a beam of electrons into a first conductive plug located within a first contact hole on an integrated circuit substrate and then measuring a quantity of electrons emitted from the first conductive plug to determine an absence or presence of an electrically insulating residue in the first contact hole. The quantity of electrons emitted from the first conductive plug by secondary electron emission can be measured in order to determine whether electrons are being accumulated within the conductive plug because an insulating residue is blocking passage of the electrons into an underlying conductive portion of the substrate. If an electrically insulating residue is present, then sufficient repulsive forces between the accumulated electrons will result in the secondary emission of excess electrons from an upper surface of the conductive plug as the conductive plug is being irradiated with the electron beam. A detector can then be used to measure the quantity of the emitted electrons against a threshold level, in order determine whether the quantity of electrons emitted by secondary emission is sufficient to indicate that an insulating residue is present in the contact hole.

Abstract translation: 检查集成电路基板的方法包括以下步骤：将电子束引导到位于集成电路基板上的第一接触孔内的第一导电插塞中，然后测量从第一导电插塞发射的电子量以确定不存在或存在 的第一接触孔中的电绝缘残渣。 可以测量从第一导电插塞通过二次电子发射发射的电子的量，以便确定电子是否积聚在导电插塞内，因为绝缘残留物阻挡电子通过基底的下面的导电部分。 如果存在电绝缘的残留物，则当导电塞被电子束照射时，积聚的电子之间的足够的排斥力将导致从导电塞的上表面二次发射多余的电子。 然后可以使用检测器来测量发射的电子的量相对于阈值水平，以便确定由二次发射发射的电子的量是否足以表明在接触孔中存在绝缘残留物。