Abstract:
A data equalizing circuit includes an equalizer configured to control a gain of data according to a value of a control code and output a controller gain; and a detection unit configured to divide n cycles of the data into N periods, count data transition frequencies for n/N periods while changing the value of the control code, calculate dispersion values of data transition frequencies for 1/N periods of the data from the data transition frequencies for the n/N periods, and finally output the value of the control code corresponding to a largest dispersion value, wherein n is equal to or greater than 2 and is set such that boundaries of the respective n/N periods of the data have different positions in the 1 UI data.
Abstract:
A data equalizing circuit includes an equalizer configured to output data according to a control code; and a detection unit configured to divide the data into N number of calculation periods, count data transition frequencies for the N calculation periods, calculate dispersion values of the data transition frequencies for the N calculation periods, and output the control code corresponding to a largest dispersion value, in response to a counting interruption signal and a counting completion signal, wherein n is equal to or greater than 2, N is greater than n, and the data is divided to n number of unit intervals (UI), andwherein a phase shift of each of the calculation periods with respect to its corresponding UI is different from a phase shift of any of the other calculation periods with respect to its corresponding UI.
Abstract:
A semiconductor apparatus having first and second chips includes a first operation unit disposed in the first chip, and is configured to perform a predetermined arithmetic operation for an initial code according to a first repair signal and generate a first operation code; and a second operation unit disposed in the second chip, and configured to perform the predetermined arithmetic operation for the first operation code according to a second repair signal and generate a second operation code.
Abstract:
A semiconductor apparatus includes a TSV formed to be electrically connected with another chip and a TSV test unit configured to check a capacitance component of the TSV to generate a TSV abnormality signal.
Abstract:
A data alignment circuit of a semiconductor memory apparatus includes: a data strobe clock phase control block configured to control a phase of a data strobe clock signal in response to a strobe delay code and generate a delayed strobe clock signal; a plurality of data phase control blocks configured to control phases of input data in response to data delay codes and generate delayed data; a plurality of data alignment blocks configured to latch the delayed data in response to the delayed strobe clock signal and generate latched data and aligned data; and a delay code generation block configured to perform an operation of determining phases of the latched data and generate the strobe delay code and the data delay codes.
Abstract:
A pipe latch control circuit and a semiconductor integrated circuit using the same are provided. The pipe latch control circuit includes a read command control unit that receives a first signal and generates a read signal in response to a control signal. In the pipe latch control circuit, the read command control unit selects, in response to the control signal, the first signal or selects a second signal obtained by delaying the first signal according to an internal clock, and generates the selected first or second signal as the read signal.
Abstract:
A semiconductor memory apparatus may comprise a duty cycle correction circuit configured to perform a duty correction operation with respect to an input clock signal when a delay locked signal is activated, and perform the duty correction operation with respect to the input signal when a precharge signal is activated, to generate a corrected clock signal.
Abstract:
A semiconductor apparatus includes a through via and a comparison unit. The through via is electrically connected with another chip. The comparison unit includes a reference capacitor, and compares a capacitance value of the through via and a capacitance value of the reference capacitor in response to a test start signal and a reset signal and generates a comparison result.