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    THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME
    1.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20110084276A1

    公开(公告)日：2011-04-14

    申请号：US12753732

    申请日：2010-04-02

    申请人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

    发明人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/78609 ,  H01L29/78618

    摘要： A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.

    摘要翻译： 公开了一种薄膜晶体管（TFT）及其制造方法。 TFT包括衬底，设置在衬底上的栅电极，设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上方并包括多晶硅（poly-Si）层的半导体层，设置的欧姆接触层 超过半导体层的预定区域，设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层，以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。 阻挡层介于半导体层和欧姆接触层之间。 因此，当控制底栅型TFT的截止电流时，可以通过简单的处理来防止由漏电流引起的特性的劣化。

    ION IMPLANTING SYSTEM
    2.
    发明申请
    ION IMPLANTING SYSTEM 有权
    离子植入系统

    公开(公告)号：US20110140005A1

    公开(公告)日：2011-06-16

    申请号：US12962829

    申请日：2010-12-08

    申请人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

    发明人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

    IPC分类号： G21G5/00

    CPC分类号： C23C14/48 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/0822 ,  H01J2237/31706

    摘要： An ion implanting system includes an ion generating system that generates ion beams and an ion implanting chamber in which a work-piece that is irradiated with the ion beams generated from the ion generating system is provided and into which the ion beams generated from the ion generating unit are directed. The ion generating system includes a first ion generating unit that irradiates ions to an upper portion of the work-piece and a second ion generating unit irradiating ions to a lower portion of the work-piece. The ion implanting system a can implant ions into a large work-piece through one ion implantation process with ion generating units arranged alternately with respect to each other in the transfer direction of the work-piece.

    摘要翻译： 离子注入系统包括产生离子束的离子产生系统和离子注入室，在该离子注入室中，设置有从离子产生系统产生的离子束照射的工件，并且从离子产生系统产生的离子束 单位被指示。 离子产生系统包括将离子照射到工件的上部的第一离子产生单元和将离子照射到工件的下部的第二离子产生单元。 离子注入系统a可以通过一个离子注入工艺将离子注入到大的工件中，其中离子发生单元在工件的传送方向上彼此交替排列。

    THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVNG THE SAME
    3.
    发明申请
    THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVNG THE SAME 有权
    薄膜晶体管和显示器件

    公开(公告)号：US20130270538A1

    公开(公告)日：2013-10-17

    申请号：US13898186

    申请日：2013-05-20

    申请人： Jong-Hyun PARK ,  Chun-Gi YOU ,  Sun PARK ,  Jin-Hee KANG ,  Yul-Kyu LEE

    发明人： Jong-Hyun PARK ,  Chun-Gi YOU ,  Sun PARK ,  Jin-Hee KANG ,  Yul-Kyu LEE

    IPC分类号： H01L51/52 ,  H01L29/786

    CPC分类号： H01L51/5281 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/66765 ,  H01L29/78678

    摘要： A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.

    摘要翻译： 薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置，所述薄膜晶体管包括基板; 基板上的多晶硅半导体层; 以及在所述半导体层和所述基板之间的金属图案，所述金属图案与所述半导体层绝缘，其中所述半导体层的多晶硅包括平行于结晶生长方向的晶界，并且所述多晶硅半导体层的表面粗糙度被限定 在其表面的最低峰和最高峰之间的距离小于约15nm。