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    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING SILICON THROUGH VIA
    3.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING SILICON THROUGH VIA 审中-公开
    制造具有硅的半导体器件的方法

    公开(公告)号：US20130178063A1

    公开(公告)日：2013-07-11

    申请号：US13347758

    申请日：2012-01-11

    申请人： Chun-Ling Lin ,  Chi-Mao Hsu ,  Tsun-Min Cheng ,  Jia-Jia Chen ,  Chin-Fu Lin

    发明人： Chun-Ling Lin ,  Chi-Mao Hsu ,  Tsun-Min Cheng ,  Jia-Jia Chen ,  Chin-Fu Lin

    IPC分类号： H01L21/28

    CPC分类号： H01L21/76898

    摘要： A method of manufacturing semiconductor device having silicon through via is disclosed, and conductor can be fully filled in the silicon through via. First, a silicon substrate is provided. Then, the silicon substrate is etched to form a through silicon via (TSV), and the through silicon via extends down from a surface of the silicon substrate. Next, a barrier layer is formed on the silicon substrate and in the through silicon via. Then, a seed layer is formed on the barrier layer and in the through silicon via. Afterward, a wet treatment is performed on the seed layer over the silicon substrate and within the through silicon via. The through silicon via is then filled with a conductor.

    摘要翻译： 公开了一种制造具有硅通孔的半导体器件的方法，并且导体可以通过通孔完全填充到硅中。 首先，提供硅基板。 然后，蚀刻硅衬底以形成贯穿硅通孔（TSV），并且通硅通孔从硅衬底的表面向下延伸。 接下来，在硅衬底和贯穿硅通孔中形成阻挡层。 然后，在阻挡层和贯穿硅通孔中形成种子层。 之后，在硅衬底上以及在硅通孔内的种子层上进行湿处理。 然后通过硅通孔填充导体。

    METHOD FOR PROCESSING METAL LAYER
    6.
    发明申请
    METHOD FOR PROCESSING METAL LAYER 审中-公开
    处理金属层的方法

    公开(公告)号：US20130045595A1

    公开(公告)日：2013-02-21

    申请号：US13210380

    申请日：2011-08-16

    申请人： Tsun-Min Cheng ,  Chien-Chao Huang ,  Chin-Fu Lin ,  Chi-Mao Hsu ,  Yen-Liang Lu ,  Chun-Ling Lin

    发明人： Tsun-Min Cheng ,  Chien-Chao Huang ,  Chin-Fu Lin ,  Chi-Mao Hsu ,  Yen-Liang Lu ,  Chun-Ling Lin

    IPC分类号： H01L21/283

    CPC分类号： H01L21/76883

    摘要： The method for processing a metal layer including the following steps is illustrated. First, a semiconductor substrate is provided. Then, a metal layer is formed over the semiconductor substrate. Furthermore, a microwave energy is used to selectively heat the metal layer without affecting the underlying semiconductor substrate and other formed structures, in which the microwave energy has a predetermined frequency in accordance with a material of the metal layer, and the predetermined frequency ranges between 1 KHz to 1 MHz.

    摘要翻译： 示出了包括以下步骤的金属层的处理方法。 首先，提供半导体基板。 然后，在半导体衬底上形成金属层。 此外，使用微波能量来选择性地加热金属层，而不影响下面的半导体衬底和其它形成的结构，其中微波能量根据金属层的材料具有预定的频率，并且预定的频率范围在1 KHz至1MHz。