摘要:
A method for fabricating through-silicon via structure is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a through-silicon via in the semiconductor substrate; covering a liner in the through-silicon via; performing a baking process on the liner; forming a barrier layer on the liner; and forming a through-silicon via electrode in the through-silicon via.
摘要:
A method for fabricating through-silicon via structure is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a through-silicon via in the semiconductor substrate; covering a liner in the through-silicon via; performing a baking process on the liner; forming a barrier layer on the liner; and forming a through-silicon via electrode in the through-silicon via.
摘要:
An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.
摘要:
An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.
摘要:
A method of forming an integrated circuit structure includes providing a gate strip in an inter-layer dielectric (ILD) layer. The gate strip comprises a metal gate electrode over a high-k gate dielectric. An electrical transmission structure is formed over the gate strip and a conductive strip is formed over the electrical transmission structure. The conductive strip has a width greater than a width of the gate strip. A contact plug is formed above the conductive strip and surrounded by an additional ILD layer.
摘要:
A signal transmitting circuit is provided for cutting off or outputting at least one driving signal for driving a designated light source. The signal transmitting circuit includes an input differential signaling driver, an output differential amplifier, and a fixed-voltage-level-difference supply device. The input differential signaling driver is for receiving a display signal, and outputting an inverting signal and a non-inverting signal according to the display signal. The output differential amplifier is for receiving the inverting signal and non-inverting signal and outputting or cutting off the driving signal according to the voltage-level difference between the inverting signal and the non-inverting signal. The fixed-voltage-level-difference supply device is for supplying a fixed-voltage-level difference to replace the inverting signal and the non-inverting signal received by the output differential amplifier; therefore the output of the output differential amplifier remains low voltage-level to cut off the output of light with a designated color.
摘要:
A capacitance measurement device includes a charging control unit for charging a measured capacitor, a discharging control unit for discharging the measured capacitor, a first switch coupled to the measured capacitor and the charging control unit for controlling a connection between the measured capacitor and the charging control unit according to a first switching signal, a second switch coupled to the measured capacitor and the discharging control unit for controlling a connection between the measured capacitor and the discharging control unit according to a second switching signal, a first A/D converter coupled to the measured capacitor for converting a voltage signal on the measured capacitor into a first signal, and a duty cycle detecting circuit coupled to the measured capacitor for converting the voltage signal on the measured capacitor into a count value that represents the capacitance of the measured capacitor and outputting the count value to a processing unit.
摘要:
A method for filling a bone defect in a subject in need thereof is disclosed. The method includes heating a bone cement composition at a first temperature where the bone cement composition is fluidic, and delivering an effective amount of the fluidic bone cement composition at a second temperature to the bone defect thereby filling the bone defect and allowing the fluidic bone cement composition to solidify, the second temperature being sufficiently high for maintaining the bone cement composition fluidic without causing thermal necrosis. Also disclosed are systems for carrying out the method.
摘要:
A wired signal receiving apparatus including a signal receiver, a signal peak detector, and a signal comparator is disclosed. The signal receiver includes an operation current detecting circuit for detecting an operation current. The signal receiver further receives a transmission signal. The signal peak detector receives the operation current, detects a peak thereof, and generates a peak current. The signal comparator compares a reference signal and the peak current to generate an output current for regulating the operation current.
摘要:
A clock signal generating circuit is provided. The clock signal generating circuit includes a clock signal generator for generating a first clock signal having a predetermined frequency; a frequency dividing circuit receiving the first clock signal, for providing a second clock signal with a frequency that is lower than the predetermined frequency of the first clock signal; and a frequency multiplier circuit receiving the second clock signal, for providing a system clock signal resuming the predetermined frequency to a load.