Abstract:
A method for integrally forming a damascene gate structure and a resistive device on a semiconductor substrate is disclosed. A first dielectric layer having a first opening and a second opening is formed on the semiconductor substrate. One or more sidewall spacers are formed on inner sides of the first opening, in which a portion of the semiconductor substrate is exposed. A coating layer is formed on inner sides and a bottom surface of the second opening. A damascene gate structure surrounded by the sidewall spacers is formed in the first opening. A resistive device is formed on the coating layer in the second opening. The coating layer allows a depth of the resistive device to be shallower than that of the damascene gate structure.
Abstract:
The reverse recovery current control circuit for a power converter. The reverse recovery control circuit includes a diode and a winding which prevents freewheeling current during the off period of the switching circuit on a primary side of the converter to flows through the output rectifiers. The diode and a set of secondary windings are placed across the output rails of the power converter. One end of the secondary windings connects to the end of the primary inductor that also connects to the output rectifiers.
Abstract:
A paper tray mechanism that is applicable to machines with paper trays, such as printers, scanners, copiers, fax machines, all-in-one multifunction center and the like, comprises an input paper tray, an output paper tray, where both trays are movable and attached to the machine at sides, and an interconnecting mechanism therein between the two trays. When one paper tray is moved by the user, due to the interconnecting mechanism therein between, another paper tray will automatically move simultaneously. Therefore, this invention provides a paper mechanism that only needs one simple and easy step to have both paper trays unfolded/folded and unstashed/stashed so that some spaces are saved for other usage and machine is compact enough to be repacked into the original box.
Abstract:
A method for remotely measuring body temperature of persons and for watching the persons, includes attaching one or more temperature measuring devices to one or more persons or patients, to detect body temperatures or locations or identifications of the persons or patients. The information detected by the temperature measuring devices may be sent to a monitoring device via a blue tooth receiver device, to receive and monitor and watch the changing of the body temperature or locations or identifications of the persons or patients wirelessly or remotely, without going to see and to contact with the persons or patients.
Abstract:
An apparatus and method for turret optimizing is used in a computer-aided manufacturing system for sheet-metal punching. The system includes a server (1), a database (3), and a number of client computers (7). The apparatus (2) resides in the server, and includes a punching tool layout information obtaining module (10), a manufacturing path setting module (20), a reference punching tool selecting module (30), a fixed punching tool determining module (40), a co-radius optimizing module (50), and an included angle calculating module (60). The apparatus is used for obtaining punching tool layout information, optimizing sequences of punching tools' locations on a turret, and recording turret information.
Abstract:
The present invention controls a room temperature by controlling an environmental control unit. A total span about a setpoint temperature is adjusted in accordance with a previous total span and a multiplicative factor. The multiplicative factor is periodically updated from a desired cycle time and a previous cycle time. The room temperature may also be controlled by adjusting a duty cycle for controlling an environmental control unit. The duty cycle is adjusted based on an error associated with a previous control cycle and an attenuation factor. A new control cycle may be started by cutting the previous control cycle or a current control cycle may be extended if a predetermined condition is detected. The control mode is selected based on environmental characteristics and room characteristics. The control mode may include a span control mode and a duty cycle control mode that is selected from the cycle rate.
Abstract:
A firearm accessory mounting apparatus comprises of a clamp body with multiple split sockets. Each said split socket has a cavity adapted for securing a firearm accessory and has a split that runs longitudinally along its body. Said split of the first split socket has a first arm at one side and a second arm at opposite side of the split. A firearm mounting frame may be secured to the firearm accessory mounting apparatus via the first arm and second arm of each split socket and adapted for securing the entire assembly to a weapon.
Abstract:
An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via preferably comprises a barrier layer and a conductive material. A second-layer conductive line is formed over the via. A first external pad is formed coupling to the first-layer conductive line. A second external pad is formed coupling to the second-layer conductive line. The via, the first conductive line and the second conductive line are adapted to be an electrical fuse. The electrical fuse can be burned out by applying a current. The vertical structure of the preferred embodiment is suitable to be formed in any layer.
Abstract:
A process for forming a semiconductor device with multiple gate insulator thicknesses, wherein exposed surfaces of a semiconductor substrate are protected during a photoresist stripping procedure, has been developed. After growth of an insulator layer on the entire surface of a semiconductor substrate portions of the insulator layer not covered by a photoresist masking shape are selectively removed. A two step photoresist removal procedure is then employed initiating with an ozone water cycle which partially removes the photoresist shape while forming a thin silicon oxide layer on the portions of bare semiconductor surface. A acid-hydrogen peroxide mixture (SPM), is then used to complete the photoresist removal procedure including removal of photoresist residues, with the thin silicon oxide layer formed during the ozone water cycle protecting the previously bare underlying semiconductor surface. An oxidation procedure is then performed allowing a first gate insulator layer to be formed incorporating the original insulator layer, and allowing a thinner, second gate insulator layer to be obtained, incorporating the thin silicon oxide layer.