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53 条记录 (耗时 0.025 秒)

    Avoiding plasma charging in integrated circuits
    1.
    发明授权
    Avoiding plasma charging in integrated circuits 有权
    避免集成电路中的等离子体充电

    公开(公告)号：US07846800B2

    公开(公告)日：2010-12-07

    申请号：US12043148

    申请日：2008-03-06

    申请人： Chung Foong Tan ,  Jae Gon Lee ,  Lee Wee Teo ,  Elgin Quek ,  Chunshan Yin

    发明人： Chung Foong Tan ,  Jae Gon Lee ,  Lee Wee Teo ,  Elgin Quek ,  Chunshan Yin

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823857 ,  H01L27/0251 ,  H01L27/092

    摘要： A circuit having a circuit control terminal, a primary circuit and a protection circuit is provided. The primary circuit includes a primary control terminal and a primary gate oxide of a thickness T1. The primary control terminal is coupled to the circuit control terminal. The protection circuit having a protection control terminal is coupled to the primary circuit. The protection circuit includes a protection gate oxide of a second thickness T2 which is less than T1. The protection gate oxide reduces plasma induced damage in the primary circuit.

    摘要翻译： 提供具有电路控制端子，初级电路和保护电路的电路。 初级电路包括厚度T1的初级控制端子和主栅极氧化物。 主控制端子耦合到电路控制端子。 具有保护控制端子的保护电路耦合到初级电路。 保护电路包括小于T1的第二厚度T2的保护栅极氧化物。 保护栅极氧化物减少了初级电路中的等离子体引起的损坏。

    Strain-direct-on-insulator (SDOI) substrate and method of forming
    7.
    发明授权
    Strain-direct-on-insulator (SDOI) substrate and method of forming 有权
    绝缘体绝缘体（SDOI）基板及其成型方法

    公开(公告)号：US07998835B2

    公开(公告)日：2011-08-16

    申请号：US12008841

    申请日：2008-01-15

    申请人： Lee Wee Teo ,  Chung Foong Tan ,  Shyue Seng Tan ,  Elgin Quek

    发明人： Lee Wee Teo ,  Chung Foong Tan ,  Shyue Seng Tan ,  Elgin Quek

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L29/165 ,  H01L21/76254 ,  H01L29/1054 ,  Y10S438/933

    摘要： Methods (and semiconductor substrates produced therefrom) of fabricating (n−1) SDOI substrates using n wafers is described. A donor substrate (e.g., silicon) includes a buffer layer (e.g., SiGe) and a plurality of multi-layer stacks formed thereon having alternating stress (e.g., relaxed SiGe) and strain (e.g., silicon) layers. An insulator is disposed adjacent an outermost strained silicon layer. The outermost strained silicon layer and underlying relaxed SiGe layer is transferred to a handle substrate by conventional or known bonding and separation methods. The handle substrate is processed to remove the relaxed SiGe layer thereby producing an SDOI substrate for further use. The remaining donor substrate is processed to remove one or more layers to expose another strained silicon layer. Various processing steps are repeated to produce another SDOI substrate as well as a remaining donor substrate, and the steps may be repeated to produce n−1 SDOI substrates.

    摘要翻译： 描述了使用n个晶片制造（n-1）个SDOI衬底的方法（以及由此制备的半导体衬底）。 施主衬底（例如，硅）包括缓冲层（例如，SiGe）和形成在其上的多个交替应力（例如，弛豫SiGe）和应变（例如硅）层的多层叠层。 绝缘体邻近最外层应变硅层设置。 最外层的应变硅层和下面的松弛的SiGe层通过常规或已知的粘结和分离方法转移到处理衬底。 处理手柄基板以去除松弛的SiGe层，从而产生用于进一步使用的SDOI基板。 处理剩余的施主衬底以除去一层或多层以暴露另一应变硅层。 重复各种处理步骤以产生另一个SDOI衬底以及剩余的施主衬底，并且可以重复该步骤以产生n-1个SDOI衬底。

    Strain-direct-on-insulator (SDOI) substrate and method of forming
    8.
    发明申请
    Strain-direct-on-insulator (SDOI) substrate and method of forming 有权
    绝缘体绝缘体（SDOI）基板及其成型方法

    公开(公告)号：US20090179226A1

    公开(公告)日：2009-07-16

    申请号：US12008841

    申请日：2008-01-15

    申请人： Lee Wee Teo ,  Chung Foong Tan ,  Shyue Seng Tan ,  Elgin Quek

    发明人： Lee Wee Teo ,  Chung Foong Tan ,  Shyue Seng Tan ,  Elgin Quek

    IPC分类号： H01L21/30 ,  H01L29/12

    CPC分类号： H01L29/165 ,  H01L21/76254 ,  H01L29/1054 ,  Y10S438/933

    摘要： Methods (and semiconductor substrates produced therefrom) of fabricating (n−1) SDOI substrates using n wafers is described. A donor substrate (e.g., silicon) includes a buffer layer (e.g., SiGe) and a plurality of multi-layer stacks formed thereon having alternating stress (e.g., relaxed SiGe) and strain (e.g., silicon) layers. An insulator is disposed adjacent an outermost strained silicon layer. The outermost strained silicon layer and underlying relaxed SiGe layer is transferred to a handle substrate by conventional or known bonding and separation methods. The handle substrate is processed to remove the relaxed SiGe layer thereby producing an SDOI substrate for further use. The remaining donor substrate is processed to remove one or more layers to expose another strained silicon layer. Various processing steps are repeated to produce another SDOI substrate as well as a remaining donor substrate, and the steps may be repeated to produce n−1 SDOI substrates.

    摘要翻译： 描述了使用n个晶片制造（n-1）个SDOI衬底的方法（以及由此制备的半导体衬底）。 施主衬底（例如，硅）包括缓冲层（例如，SiGe）和形成在其上的多个交替应力（例如，弛豫SiGe）和应变（例如硅）层的多层叠层。 绝缘体邻近最外层应变硅层设置。 最外层的应变硅层和下面的松弛的SiGe层通过常规或已知的粘结和分离方法转移到处理衬底。 处理手柄基板以去除松弛的SiGe层，从而产生用于进一步使用的SDOI基板。 处理剩余的施主衬底以除去一层或多层以暴露另一应变硅层。 重复各种处理步骤以产生另一个SDOI衬底以及剩余的施主衬底，并且可以重复该步骤以产生n-1个SDOI衬底。

    STRAIN-DIRECT-ON-INSULATOR (SDOI) SUBSTRATE AND METHOD OF FORMING
    9.
    发明申请
    STRAIN-DIRECT-ON-INSULATOR (SDOI) SUBSTRATE AND METHOD OF FORMING 审中-公开
    应变直接绝缘体（SDOI）基板和形成方法

    公开(公告)号：US20110278645A1

    公开(公告)日：2011-11-17

    申请号：US13191288

    申请日：2011-07-26

    申请人： Lee Wee Teo ,  Chung Foong Tan ,  Shyue Seng Tan ,  Elgin Quek

    发明人： Lee Wee Teo ,  Chung Foong Tan ,  Shyue Seng Tan ,  Elgin Quek

    IPC分类号： H01L29/165

    CPC分类号： H01L29/165 ,  H01L21/76254 ,  H01L29/1054 ,  Y10S438/933

    摘要： Methods (and semiconductor substrates produced therefrom) of fabricating (n−1) SDOI substrates using n wafers is described. A donor substrate (e.g., silicon) includes a buffer layer (e.g., SiGe) and a plurality of multi-layer stacks formed thereon having alternating stress (e.g., relaxed SiGe) and strain (e.g., silicon) layers. An insulator is disposed adjacent an outermost strained silicon layer. The outermost strained silicon layer and underlying relaxed SiGe layer is transferred to a handle substrate by conventional or known bonding and separation methods. The handle substrate is processed to remove the relaxed SiGe layer thereby producing an SDOI substrate for further use. The remaining donor substrate is processed to remove one or more layers to expose another strained silicon layer. Various processing steps are repeated to produce another SDOI substrate as well as a remaining donor substrate, and the steps may be repeated to produce n−1 SDOI substrates.

    摘要翻译： 描述了使用n个晶片制造（n-1）个SDOI衬底的方法（以及由此制备的半导体衬底）。 施主衬底（例如，硅）包括缓冲层（例如，SiGe）和形成在其上的多个交替应力（例如，弛豫SiGe）和应变（例如硅）层的多层叠层。 绝缘体邻近最外层应变硅层设置。 最外层的应变硅层和下面的松弛的SiGe层通过常规或已知的粘结和分离方法转移到处理衬底。 处理手柄基板以去除松弛的SiGe层，从而产生用于进一步使用的SDOI基板。 处理剩余的施主衬底以除去一层或多层以暴露另一应变硅层。 重复各种处理步骤以产生另一个SDOI衬底以及剩余的施主衬底，并且可以重复该步骤以产生n-1个SDOI衬底。