公开(公告)号：US20110039362A1

公开(公告)日：2011-02-17

申请号：US12855752

申请日：2010-08-13

申请人： Chunping LONG ,  Haoran GAO ,  Jigang XU

发明人： Chunping LONG ,  Haoran GAO ,  Jigang XU

IPC分类号： H01L21/336 ,  H01L21/30

CPC分类号： H01L27/1285 ,  H01L27/1292

摘要： A method of forming a film pattern with micro-pattern and a method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate are provided. The method of manufacturing the film pattern with micro-pattern comprises: depositing a thin film on a substrate; jetting or dropping etchant on the thin film with a predetermined etching pattern by an inkjet print device; etching the thin film by the etchant; and cleaning the thin film to form a film pattern on the substrate.

摘要翻译： 提供一种形成具有微图案的膜图案的方法和制造薄膜晶体管液晶显示器（TFT-LCD）阵列基板的方法。 具有微图案的膜图案的制造方法包括：在基板上沉积薄膜; 通过喷墨打印装置以预定的蚀刻图案在薄膜上喷射或滴落蚀刻剂; 用蚀刻剂蚀刻薄膜; 并清洗该薄膜以在该基板上形成一薄膜图案。

公开(公告)号：US20110090208A1

公开(公告)日：2011-04-21

申请号：US12908060

申请日：2010-10-20

申请人： Chunping LONG ,  Haoran GAO

发明人： Chunping LONG ,  Haoran GAO

IPC分类号： G09G3/32 ,  G06F3/038

CPC分类号： G09G3/3233 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/045

摘要： A voltage-driving pixel unit comprises a voltage-driving pixel circuit and an organic light emitting diode (OLED) driven by the voltage-driving pixel circuit is provided. The voltage-driving pixel circuit comprises a gate line, a data line, a power source line, a ground terminal, a switching transistor, a driving transistor, a compensating transistor, a blocking transistor and a storage capacitor.

摘要翻译： 电压驱动像素单元包括电压驱动像素电路和由电压驱动像素电路驱动的有机发光二极管（OLED）。 电压驱动像素电路包括栅极线，数据线，电源线，接地端子，开关晶体管，驱动晶体管，补偿晶体管，阻塞晶体管和存储电容器。

公开(公告)号：US20120292628A1

公开(公告)日：2012-11-22

申请号：US13471911

申请日：2012-05-15

申请人： Xueyan TIAN ,  Chunping LONG ,  Jiangfeng YAO

发明人： Xueyan TIAN ,  Chunping LONG ,  Jiangfeng YAO

IPC分类号： H01L27/105 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78678 ,  H01L29/66765 ,  H01L29/78696

摘要： One or more embodiments of the disclosed technology provide a thin film transistor, an array substrate and a method for preparing the same. The thin film transistor comprises a base substrate, and a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode and a passivation layer prepared on the base substrate in this order. The active layer is formed of microcrystalline silicon, and the active layer comprises an active layer lower portion and an active layer upper portion, and the active layer lower portion is microcrystalline silicon obtained by using hydrogen plasma to treat at least two layers of amorphous silicon thin film prepared in a layer-by-layer manner.

摘要翻译： 所公开技术的一个或多个实施例提供薄膜晶体管，阵列基板及其制备方法。 薄膜晶体管依次包括在基底基板上制备的基底基板，栅电极，栅极绝缘层，有源层，欧姆接触层，源电极，漏电极和钝化层。 有源层由微晶硅形成，有源层包括有源层下部和有源层上部，有源层下部是通过使用氢等离子体来处理至少两层非晶硅薄膜而得到的微晶硅 电影以逐层方式准备。

公开(公告)号：US20110273639A1

公开(公告)日：2011-11-10

申请号：US13101257

申请日：2011-05-05

申请人： Zhenyu XIE ,  Chunping LONG

发明人： Zhenyu XIE ,  Chunping LONG

IPC分类号： G02F1/1368 ,  H01L33/62

CPC分类号： H01L27/1288 ,  G02F1/136286 ,  G02F2001/136236 ,  H01L27/1214 ,  H01L27/124

摘要： A manufacturing method of an array substrate comprises forming gate lines, data lines, pixel electrodes, and gate electrodes, active layer members, source electrodes, drain electrodes of thin film transistors (TFTs) in pixel units in a display region and forming the gate lines and the data lines in a pad region. A process of forming the data lines, the active layer members, the source electrodes and the drain electrodes in the display region and simultaneously forming the data lines in the pad region is performed.

摘要翻译： 阵列基板的制造方法包括在显示区域中以像素单位形成栅极线，数据线，像素电极和栅电极，有源层部件，源电极，薄膜晶体管（TFT）的漏电极，并形成栅极线 和焊盘区域中的数据线。 执行在显示区域中形成数据线，有源层部件，源电极和漏极以及同时形成焊盘区域中的数据线的工序。

公开(公告)号：US20070298554A1

公开(公告)日：2007-12-27

申请号：US11767600

申请日：2007-06-25

申请人： Chunping LONG ,  Jigang Zhao ,  Seung Moo Rim

发明人： Chunping LONG ,  Jigang Zhao ,  Seung Moo Rim

IPC分类号： H01L21/84

CPC分类号： H01L27/1288 ,  G02F1/136227 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L27/1214

摘要： The present invention discloses a method for manufacturing a TFT LCD array substrate by utilizing the gray tone mask technology and the photoresist lifting-off technology with only two masks in two photolithography processes, and to a TFT LCD array substrate manufactured by the same. In the resultant array substrate, the gate line and the data line are perpendicular to and intersect with each other to define the pixel area, and one of the gate line and the data line is continuous and the other is discontinuous. The array substrate is covered with a passivation protection film. The disconnected gate line or the data line is connected together through the via holes formed in the passivation protection film and the connecting conductive film formed on the passivation protection film. The data line and the source electrode and drain electrode of the TFT are made of the same conductive film, and the connecting conductive film and the pixel electrode are made of the same conductive film in the same photolithography process.

摘要翻译： 本发明公开了通过在两个光刻工艺中仅使用两个掩模的灰色蒙版技术和光致抗蚀剂剥离技术以及由其制造的TFT LCD阵列基板来制造TFT LCD阵列基板的方法。 在合成的阵列基板中，栅极线和数据线彼此垂直并相交，以限定像素区域，并且栅极线和数据线之一是连续的，而另一个是不连续的。 阵列基板被钝化保护膜覆盖。 断开的栅线或数据线通过形成在钝化保护膜上的通孔和形成在钝化保护膜上的连接导电膜连接在一起。 TFT的数据线和源电极和漏电极由相同的导电膜制成，并且在相同的光刻工艺中，连接导电膜和像素电极由相同的导电膜制成。

公开(公告)号：US20080123007A1

公开(公告)日：2008-05-29

申请号：US11947115

申请日：2007-11-29

申请人： Jianing CUI ,  Chunping LONG

发明人： Jianing CUI ,  Chunping LONG

IPC分类号： G02F1/1333

CPC分类号： G02F1/13394 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/13392 ,  G02F1/1362

摘要： A thin film transistor liquid crystal display (TFT LCD), including a TFT array substrate, a color filter substrate and a post spacer disposed between the TFT array substrate and the color filter substrate. The TFT array substrate includes a gate line, a data line, and a TFT disposed in a pixel area defined by the gate line and the data line crossing with each other, and the TFT comprises a source/drain electrode. The post spacer is located in a region at least partially surrounded by the source/drain electrode, the data line and the gate line.

摘要翻译： 一种薄膜晶体管液晶显示器（TFT LCD），包括TFT阵列基板，滤色器基板和布置在TFT阵列基板和滤色器基板之间的柱状间隔物。 TFT阵列基板包括设置在由栅极线和数据线彼此交叉的像素区域中的栅极线，数据线和TFT，并且TFT包括源极/漏极。 后隔片位于至少部分地被源/漏电极，数据线和栅极线包围的区域中。

公开(公告)号：US20120306398A1

公开(公告)日：2012-12-06

申请号：US13486051

申请日：2012-06-01

申请人： Yinan LIANG ,  Zhanjie MA ,  Chunping LONG ,  Jun CHENG ,  Lei SHI ,  Dongfang WANG ,  Chunsheng JIANG ,  Zheng LIU

发明人： Yinan LIANG ,  Zhanjie MA ,  Chunping LONG ,  Jun CHENG ,  Lei SHI ,  Dongfang WANG ,  Chunsheng JIANG ,  Zheng LIU

IPC分类号： H05B37/02

CPC分类号： G09G3/3283 ,  G09G2310/0248

摘要： The present disclosure relates to a driving apparatus, an OLED (Organic Light-Emitting Diode) panel, and a method for driving the OLED panel. The driving apparatus can be integrated on a substrate of pixel circuits and is capable of providing fast and stable current driving. The driving apparatus includes a switching module for selecting a voltage signal according to a received clock signal; a conversion module for converting the voltage signal into a current signal; and an output module for outputting the voltage signal or the converted current signal to drive a pixel circuit array, wherein the switching module is connected to the conversion module and the output module, and the conversion module is connected to the switching module and the output module.

摘要翻译： 本发明涉及驱动装置，OLED（有机发光二极管）面板以及驱动OLED面板的方法。 驱动装置可以集成在像素电路的基板上，并且能够提供快速和稳定的电流驱动。 驱动装置包括：切换模块，用于根据所接收的时钟信号选择电压信号; 用于将电压信号转换为电流信号的转换模块; 以及输出模块，用于输出电压信号或转换的电流信号以驱动像素电路阵列，其中切换模块连接到转换模块和输出模块，并且转换模块连接到开关模块和输出模块 。

公开(公告)号：US20120289007A1

公开(公告)日：2012-11-15

申请号：US13469567

申请日：2012-05-11

申请人： Zheng LIU ,  Chunping LONG ,  Chunsheng JIANG ,  Jun CHENG ,  Lei SHI ,  Dongfang WANG ,  Yinan LIANG

发明人： Zheng LIU ,  Chunping LONG ,  Chunsheng JIANG ,  Jun CHENG ,  Lei SHI ,  Dongfang WANG ,  Yinan LIANG

IPC分类号： H01L21/336

CPC分类号： H01L29/6675 ,  H01L27/1277

摘要： Embodiments of the disclosed technology relate to a method for manufacturing a thin film transistor (TFT) with a polysilicon active layer comprising: depositing an amorphous silicon layer on a substrate, and patterning the amorphous silicon layer so as to form an active layer comprising a source region, a drain region and a channel region; depositing an inducing metal layer on the source region and the drain region; performing a first thermal treatment on the active layer provided with the inducing metal layer so that the active layer is crystallized under the effect of the inducing metal; doping the source region and the drain region with a first impurity for collecting the inducing metal; and performing a second thermal treatment on the doped active layer so that the first impurity absorbs the inducing metal remained in the channel region.

摘要翻译： 所公开的技术的实施例涉及一种用于制造具有多晶硅有源层的薄膜晶体管（TFT）的方法，包括：在衬底上沉积非晶硅层，并且对非晶硅层进行构图以形成包括源极 区域，漏极区域和沟道区域; 在所述源极区域和所述漏极区域上沉积感应金属层; 在具有诱导金属层的有源层上进行第一热处理，使得活性层在诱导金属的作用下结晶; 用第一杂质掺杂源区和漏区以收集诱导金属; 以及对掺杂的有源层进行第二热处理，使得第一杂质吸收留在沟道区中的诱导金属。